isc Product Specification INCHANGE Semiconductor isc Triacs BT134-600D FEATURES ·With TO-126P package ·Designed for use in general purpose bidirectional switching and phase control applications , which are intended to be interfaced directly to microcontrollers , logic integrated circuits and other low power gate trigger circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak off-state voltage 600 V IT(RMS) RMS on-state current (full sine wave) 4 A ITSM Non-repetitive peak on-state current 25 A PGM Peak gate power dissipation 5 W PG(AV) Average gate power dissipation 0.5 W Tj Operating junction temperature 110 ℃ -45~150 ℃ Tstg Storage temperature ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM, VR=VRRM, Tj=110℃ VD=VDRM, VD=VDRM, Tj=110℃ Gate trigger current Ⅱ Ⅲ MAX 0.01 0.2 0.01 0.2 UNIT mA mA 5 Ⅰ IGT MIN VD=12V; IT= 0.1A, RL= 30Ω 5 5 mA 10 Ⅳ VTM On-state voltage IT= 5A 1.7 V IH Holding current IGT= 0.1A, VD= 12V 10 mA Gate trigger voltage VD=12V; RL= 30Ω 1.5 V VGT isc website：www.iscsemi.cn