D56/ www.daysemi.jp N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () ID (A) 0.095 at VGS = 10 V 15 0.100 at VGS = 6 V 15 • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • 100 % Rg Tested APPLICATIONS D • Primary Side Switch TO-252 G G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C 8.7 25 Continuous Source Current (Diode Conduction) IS 15 Avalanche Current IAR 15 EAR 11.3 Repetitive Avalanche Energy (Duty Cycle 1 %) Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C A mJ 62b PD W 2.7a TJ, Tstg Operating Junction and Storage Temperature Range V 15 ID IDM Pulsed Drain Current Unit °C - 55 to 175 THERMAL RESISTANCE RATINGS Symbol Parameter Junction-to-Ambienta Junction-to-Case t 10 s Steady State RthJA RthJC Typical Maximum 16 20 45 55 2 2.4 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. 1 D56/ www.daysemi.jp SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Symbol Parameter Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) V VDS = 100 V, VGS = 0 V, TJ = 175 °C VDS =5 V, VGS = 10 V Forward Transconductanceb RDS(on) gfs µA 250 15 VGS = 10 V, ID = 15 A Drain-Source On-State Resistanceb nA A 0.077 0.095 VGS = 10 V, ID = 15 A, TJ = 125 °C 0.190 VGS = 10 V, ID = 15 A, TJ = 175 °C 0.250 VGS = 6 V, ID = 10 A 0.081 VDS = 15 V, ID = 15 A 25 VGS = 0 V, VDS = 25 V, f = 1 MHz 115 0.100 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c 20 VDS = 75 V, VGS = 10 V, ID = 15 A Rise Timec Fall Timec 1 td(on) tr c td(off) 25 5.5 nC 7 Rg Gate Resistance Turn-On Delay Timec pF 70 Qgd Gate-Drain Charge Turn-Off Delay Time 900 VDD = 75 V, RL = 5 ID 15 A, VGEN = 10 V, RG = 2.5 tf 3.2 8 12 35 55 17 25 30 45 ns Source-Drain Diode Ratings and Characteristic (TC = 25 °C) ISM Pulsed Current 15 A Voltageb VSD IF = 15 A, VGS = 0 V 0.9 1.5 V Source-Drain Reverse Recovery Time trr IF = 15 A, dI/dt = 100 A/µs 55 85 ns Diode Forward Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 D56/ www.daysemi.jp TYPICAL CHARACTERISTICS (25 °C unless noted) 25 25 VGS = 10 thru 6 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 15 5V 10 5 3V 15 10 TC = 125 °C 5 25 °C 4V - 55 °C 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.14 40 TC = - 55 °C 25 °C 24 RDS(on)- On-Resistance () g fs - Transconductance (S) 0.12 32 125 °C 16 8 0.10 VGS = 6 V 0.08 VGS = 10 V 0.06 0.04 0.02 0.00 0 0 5 10 15 20 0 25 5 10 ID - Drain Current (A) 20 25 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 1500 V GS - Gate-to-Source Voltage (V) 20 1200 C - Capacitance (pF) 15 Ciss 900 600 300 Crss Coss 0 VDS = 75 V ID = 15 A 16 12 8 4 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance 100 0 8 16 24 32 40 Qg - Total Gate Charge (nC) Gate Charge 3 D56/ www.daysemi.jp TYPICAL CHARACTERISTICS (25 °C unless noted) 100 VGS = 10 V ID = 15 A 2.4 2.0 I S - Source Current (A) R DS(on)- On-Resistance (Normalized) 2.8 1.6 1.2 0.8 TJ = 150 °C 10 TJ = 25 °C 0.4 0.0 - 50 - 25 0 25 50 75 100 125 150 1 175 0.3 0 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 100 20 I D - Drain Current (A) I D - Drain Current (A) 10 µs Limited by R DS(on)* 15 10 5 100 µs 10 1 ms 1 TC = 25 °C Single Pulse 0 0 25 50 75 100 125 TC - Case Temperature (°C) 150 175 0.1 0.1 Maximum Avalanche Drain Current vs. Case Temperature 10 ms 100 ms 1 s, DC 1 10 1000 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 4 1 10 Package Information TO-252AA CASE OUTLINE E C2 L3 H D b2 C A1 D1 e1 L gage plane height (0.5 mm) e L5 L4 b INCHES MILLIMETERS A b3 DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 E1 Note • Dimension L3 is for reference only. 1 Application Note RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE 1 Legal Disclaimer Notice www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Din-Tek’s knowledge of typical requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death. Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. 1