POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER DIODE POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 AR1109 Repetitive voltage up to Mean forward current Surge current 4400 V 1000 A 10.3 kA FINAL SPECIFICATION nov 02 - ISSUE : 05 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 150 4400 V V RSM Non-repetitive peak reverse voltage 150 4500 V I RRM Repetitive peak reverse current 150 50 V=VRRM mA CONDUCTING I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 1000 A I F (AV) Mean forward current 180° sin ,50 Hz, Tc=85°C, double side cooled 905 A I FSM Surge forward current Sine wave, 10 ms without reverse voltage 10.3 kA 530 x 1E3 A²s I² t I² t V FM Forward voltage V F(TO) r F Forward current = 150 1800 A 25 1.80 V Threshold voltage 150 0.89 V Forward slope resistance 150 0.675 mohm SWITCHING t rr Reverse recovery time Q rr Reverse recovery charge I rr Peak reverse recovery current µs 150 µC A MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled R th(c-h) Thermal impedance Case to heatsink, double side cooled T Operating junction temperature F j 37 °C/kW 7 °C/kW -30 / Mounting force 11.8 Mass 300 ORDERING INFORMATION : AR1109 S 44 standard specification VRRM/100 150 °C / 13.2 kN g AR1109 RECTIFIER DIODE FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation nov 02 - ISSUE : 05 DISSIPATION CHARACTERISTICS SQUARE WAVE Th [°C] 150 140 130 120 110 100 90 30° 80 60° 70 90° 120° 60 180° DC 50 0 200 400 600 800 1000 1200 1400 1600 IF(AV) [A] PF(AV) [W] 3000 2500 120° 2000 60° DC 180° 90° 30° 1500 1000 500 0 0 200 400 600 800 IF(AV) [A] 1000 1200 1400 1600 AR1109 RECTIFIER DIODE FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation nov 02 - ISSUE : 05 DISSIPATION CHARACTERISTICS SINE WAVE Th [°C] 170 150 130 30° 110 60° 90 90° 120° 70 180° 50 0 200 400 600 800 1000 1200 1400 1600 1200 1400 1600 IF(AV) [A] PF(AV) [W] 3000 180° 2500 90° 2000 30° 120° 60° 1500 1000 500 0 0 200 400 600 800 IF(AV) [A] 1000 AR1109 RECTIFIER DIODE FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation nov 02 - ISSUE : 05 FORWARD CHARACTERISTIC Tj = 150 °C SURGE CHARACTERISTIC Tj = 150 °C 3500 12 3000 10 8 2000 ITSM [kA] Forward Current [A] 2500 1500 6 4 1000 2 500 0 0 0.6 1.1 1.6 2.1 2.6 1 Forward Voltage [V] 10 n° cycles TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 40.0 35.0 Zth j-h [°C/kW] 30.0 25.0 20.0 15.0 10.0 5.0 0.0 0.001 0.01 0.1 1 10 100 t[s] Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 100