IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 0.13 Qg (Max.) (nC) 180 Qgs (nC) 46 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current 71 Configuration Available Single • Effective Coss Specified D • Lead (Pb)-free Available SUPER-247TM APPLICATIONS • Switch Mode Power Supply (SMPS) G • Uninterruptible Power Supply S D G • High Speed Power Switching S TYPICAL SMPS TOPOLOGIES N-Channel MOSFET • Full Bridge Converters • Power Factor Correction Boost ORDERING INFORMATION SUPER-247TM IRFPS37N50APbF SiHFPS37N50A-E3 IRFPS37N50A SiHFPS37N50A Package Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID UNIT V 36 23 A IDM 144 3.6 W/°C Single Pulse Avalanche Energyb EAS 1260 mJ Repetitive Avalanche Currenta IAR 36 A Repetitive Avalanche Energya EAR 44 mJ Linear Derating Factor Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s PD 446 W dV/dt 3.5 V/ns TJ, Tstg - 55 to + 150 300d °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.94 mH, RG = 25 Ω, IAS = 36 A (see fig. 12). c. ISD ≤ 36 A, dI/dt ≤ 145 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91258 S-81368-Rev. B, 21-Jul-08 www.vishay.com 1 IRFPS37N50A, SiHFPS37N50A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.28 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. VDS VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 250 µA 2.0 TYP. MAX. UNIT - - V - 4.0 V nA Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = ± 30 V - - ± 100 VDS = 500 V, VGS = 0 V - - 25 VDS = 400 V, VGS = 0 V, TJ = 150 °C - - 250 - - 0.13 Ω 20 - - S ID = 22 Ab VGS = 10 V VDS = 50 V, ID = 22 Ab µA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Coss Effective Output Capacitance Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time VGS = 0 V Coss eff. Total Gate Charge tr td(off) - 5579 - - 810 - - 36 - VDS = 1.0 V , f = 1.0 MHz - 7905 - VDS = 400 V , f = 1.0 MHz - 221 - VDS = 0 V to 400 V - 400 - - - 180 - - 46 - - 71 - 23 - - 98 - - 52 - - 80 - - - 36 - - 144 VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 36 A, VDS = 400 V, see fig. 6 and 13b VDD = 250 V, ID = 36 A, RG = 2.15 Ω, RD = 7.0 Ω, see fig. 10b tf pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 36 A, VGS = 0 Vb TJ = 25 °C, IF = 36 A, dI/dt = 100 A/µsb - - 1.5 V - 570 860 ns - 8.6 13 µC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91258 S-81368-Rev. B, 21-Jul-08 IRFPS37N50A, SiHFPS37N50A Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) 100 10 4.5V 1 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 100 1 10 TJ = 150 ° C TJ = 25 ° C 10 V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 VDS , Drain-to-Source Voltage (V) VGS , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) 100 1 4.0 100 10 4.5V 20µs PULSE WIDTH TJ = 150 ° C 1 0.1 1 10 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91258 S-81368-Rev. B, 21-Jul-08 100 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TOP 9.0 ID = 36A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFPS37N50A, SiHFPS37N50A Vishay Siliconix 1000 V GS = 0V, f = 1MHz C iss = C gs + C gd, C dsSHORTED C rss = C gd C oss = C ds + C gd ISD , Reverse Drain Current (A) C, Capacitance (pF) 100000 10000 100 C iss 1000 C oss 100 TJ = 150 ° C 10 TJ = 25 ° C 1 Crss 10 A 1 10 100 0.1 0.2 1000 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 VDS , Drain-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 1000 ID = 36A OPERATION IN THIS AREA LIMITED BY RDS(on) VDS = 400V VDS = 250V VDS = 100V 16 ID , Drain Current (A) VGS , Gate-to-Source Voltage (V) 20 10us 100 12 8 100us 10 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 40 80 120 160 200 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 1 1ms 10ms TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91258 S-81368-Rev. B, 21-Jul-08 IRFPS37N50A, SiHFPS37N50A Vishay Siliconix RD VDS 40 VGS D.U.T. ID , Drain Current (A) RG + - VDD 30 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 20 Fig. 10a - Switching Time Test Circuit VDS 10 90 % 0 25 50 75 100 125 10 % VGS 150 TC , Case Temperature ( ° C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 PDM 0.02 0.01 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS 15 V L VDS D.U.T. RG IAS 20 V tp tp Driver + A - VDD 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91258 S-81368-Rev. B, 21-Jul-08 IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFPS37N50A, SiHFPS37N50A Vishay Siliconix EAS , Single Pulse Avalanche Energy (mJ) TOP 2500 BOTTOM ID 16A 23A 36A 2000 1500 1000 500 V DSav , Avalanche Voltage (V) 580 3000 560 540 520 500 0 25 50 75 100 125 150 A 0 10 Starting TJ , Junction Temperature ( °C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current 20 30 40 I av , Avalanche Current (A) Fig. 12d - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91258 S-81368-Rev. B, 21-Jul-08 IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - • • • • RG dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91258. Document Number: 91258 S-81368-Rev. B, 21-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1