CEM0415 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 150V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 95mΩ @VGS = 6V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D D D D 8 7 6 5 1 S 2 S 3 S 4 G Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS Parameter TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage(Typ) VDS 150 Units V Gate-Source Voltage VGS ±30 V ID 4 A IDM 16 A PD 2.5 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 50 C/W Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2012.Sep http://www.cetsemi.com CEM0415 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Min Typ Max Units VDS = 135V, VGS = 0V 1 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA Off Characteristics 150 V On Characteristics VGS(th) Gate Threshold Voltage Static Drain-Source On-Resistance RDS(on) Rg Gate input resistance VGS = VDS, ID = 250µA 2 4 V VGS = 10V, ID = 3.3A 62 85 mΩ VGS = 6V, ID = 3.0A 70 95 mΩ f=1MHz,open Drain 1 Ω 1355 pF 130 pF 50 pF Dynamic Characteristics c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 30V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 75V, ID = 3.5A, VGS = 10V, RGEN = 6Ω 18 5 ns 10 35 ns ns 10 Turn-Off Fall Time tf 5 Total Gate Charge Qg 23 nC Gate-Source Charge Qgs 5 nC Gate-Drain Charge Qgd 6 nC VDS = 75V, ID = 3.5A, VGS = 10V ns Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS b VSD VGS = 0V, IS = 2A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 2 A 1.2 V CEM0415 7.5 25 C VGS=10,8,7V 4.0 3.2 ID, Drain Current (A) ID, Drain Current (A) 4.8 VGS=5V 2.4 1.6 0.8 0 0.0 1 2 3 4 -55 C 4 6 8 10 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 750 500 Coss 250 Crss 0 6 12 18 24 30 2.2 1.9 ID=3.3A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 2 0.0 VGS, Gate-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage TJ=125 C 1.5 0 1000 1.2 3.0 VDS, Drain-to-Source Voltage (V) 1250 1.3 4.5 5 1500 0 6.0 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS=75V ID=3.5A 8 6 4 2 0 0 2 RDS(ON)Limit ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEM0415 5 10 15 20 25 10 1 10 0 10 -1 10 -2 10ms 100ms 1s DC TA=25 C TJ=150 C Single Pulse 10 -1 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 10 0.2 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 Single Pulse 10 -3 10 -4 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 3