DMP56D0UFB Green Product Summary V(BR)DSS RDS(ON) -50V 6Ω @ VGS = -4 V 8Ω @ VGS = -2.5V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits ID TA = +25°C -200mA -160mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching Mechanical Data performance, making it ideal for high efficiency power management applications. Applications Low On-Resistance ESD Protected Gate Low Input/Output Leakage Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Case: X1-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4 Terminal Connections: See Diagram Weight: 0.001 grams (Approximate) Drain Body Diode X1-DFN1006-3 Gate S D G ESD PROTECTED Bottom View Top View Internal Schematic Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Notes: Part Number Case Packaging DMP56D0UFB-7 X1-DFN1006-3 3,000/Tape & Reel DMP56D0UFB-7B X1-DFN1006-3 10,000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html DMP56D0UFB Document number: DS36175 Rev. 3 - 2 1 of 7 www.diodes.com May 2015 © Diodes Incorporated DMP56D0UFB Marking Information From date code 1527 (YYWW), this changes to: D3 D3 Top View Bar Denotes Gate and Source Side Top View Dot Denotes Drain Side D3 D3 D3 D3 D3 D3 DMP56D0UFB-7 D3 Top View Bar Denotes Gate and Source Side D3 = Part Marking Code D3 D3 D3 DMP56D0UFB-7B Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Steady Pulsed Drain Current (Note 6) TA = +25°C Symbol VDSS VGSS ID IDM Value -50 ±8 -200 -700 Units V V mA mA Symbol PD RθJA TJ, TSTG Value 425 275 -55 to +150 Units mW °C/W °C Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Notes: 5. Device mounted on FR-4 PCB. t ≤5 sec. 6. Pulse width ≤10µS, Duty Cycle ≤1%. DMP56D0UFB Document number: DS36175 Rev. 3 - 2 2 of 7 www.diodes.com May 2015 © Diodes Incorporated DMP56D0UFB Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -50 — — — — — — -10 ±1 V µA µA VGS = 0V, ID = -250µA VDS = -50V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) -0.5 V Static Drain-Source On-Resistance RDS (ON) —— -1.2 6 8 — -1.2 mS V VDS = VGS, ID = -250µA VGS = -4.0V, ID = -100mA VGS = -2.5V, ID = -80mA VDS = -5V, ID = -100mA VGS = 0V, IS = -100mA Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance |Yfs| VSD 100 — — 4.6 6 — — Ciss Coss Crss — — — 50.54 3.49 2.42 — — — pF pF pF VDS = -25V, VGS = 0V, f = 1.0MHz Gate Resistance RG — 201 — Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge VGS = 4.5V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Qg Qgs Qgd — — — — — — — 0.58 0.09 0.14 4.46 6.63 21.9 15.0 — — — — — — — nC nC nC nS nS nS nS Notes: tD(on) tr tD(off) tf Ω VGS = -4V, VDS = -25V, ID = -100mA VDD = -30V, ID = -0.27A, VGEN = -4V, RGEN = 6Ω 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP56D0UFB Document number: DS36175 Rev. 3 - 2 3 of 7 www.diodes.com May 2015 © Diodes Incorporated DMP56D0UFB 0.8 0.4 VGS = 4.5V VDS = -5V T A = 125°C TA = 25°C 0.6 -ID, DRAIN CURRENT (A) VGS = 8.0V -ID, DRAIN CURRENT (A) TA = -55°C VGS = 2.5V VGS = 4.0V VGS = 1.8V 0.4 VGS = 1.5V 0.2 T A = 150°C 0.3 TA = 85°C 0.2 0.1 VGS = 1.2V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 0 7 6 VGS = -2.5V VGS = -4.0V 5 VGS = -8.0V 4 VGS = -4.5V 3 2 0 0.1 0.2 0.3 0.4 0.5 -ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistnace vs. Drain Current and Gate Voltage 0.6 VGS = -4V 9 TA = 150°C 8 7 TA = 125°C TA = 85°C 6 T A = 25°C 5 4 TA = -55°C 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 -ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 0.6 10 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 10 VGS = -4V ID = -100mA 1.6 1.4 VGS = -2.5V ID = -100mA 1.2 1 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMP56D0UFB Document number: DS36175 Rev. 3 - 2 4 of 7 www.diodes.com 9 8 VGS = -2.5V, ID = -100mA 7 6 5 VGS = -4V, ID = -100mA 4 3 2 1 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature May 2015 © Diodes Incorporated DMP56D0UFB 1.5 1 0.8 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) TA = 150°C 1 ID = -1mA ID = -250µA 0.5 0 -50 TA = 125°C 0.6 TA = 25°C 0.4 TA = -55°C 0.2 0 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature -25 100 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 8 -V GS, GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (PF) TA = 85°C 10 1 0 5 10 15 20 25 30 35 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance DMP56D0UFB Document number: DS36175 Rev. 3 - 2 40 5 of 7 www.diodes.com 6 VDS = -25V ID = -100mA 4 2 0 0 0.2 0.4 0.6 0.8 1 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge Characteristics 1.2 May 2015 © Diodes Incorporated DMP56D0UFB Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A A1 Seating Plane D b Pin #1 ID e E b2 X1-DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 z 0.02 0.08 0.05 All Dimensions in mm z L3 L2 L1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Y Dimensions C G1 G2 X X1 Y Y1 Y1 G2 X G1 Value (in mm) 0.70 0.30 0.20 0.40 1.10 0.25 0.70 X1 DMP56D0UFB Document number: DS36175 Rev. 3 - 2 6 of 7 www.diodes.com May 2015 © Diodes Incorporated DMP56D0UFB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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