Diodes DMN2100UDM-7 N-channel enhancement mode field effect transistor Datasheet

DMN2100UDM
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
NEW PRODUCT
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Features
Mechanical Data
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•
•
•
•
•
•
•
Low On-Resistance
•
55 mΩ @ VGS = 4.5V
•
70 mΩ @ VGS = 2.5V
•
90 mΩ @ VGS = 1.8V
•
130 mΩ @ VGS = 1.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standard for High Reliability
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•
•
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SOT-26
6
D1
Case: SOT-26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.015 grams (approximate)
D
D
S
D
G
5
S1
4
D2
G1
1
S2
2
ESD PROTECTED
D
G2
3
TOP VIEW
Maximum Ratings
TOP VIEW
Internal Schematic
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 1)
Thermal Characteristics
Symbol
VDSS
VGSS
ID
IDM
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
Units
V
V
A
A
Value
900
139
-55 to +150
Units
mW
°C/W
°C
@TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Static Drain-Source On-Resistance
Value
20
±8
3.3
13
Symbol
PD
RθJA
TJ, TSTG
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
⎯
⎯
⎯
⎯
⎯
⎯
1
±1
V
μA
μA
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
0.6
⎯
1.0
V
mΩ
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 6A
VGS = 2.5V, ID = 4.0A
VGS = 1.8V, ID = 1.5A
VGS = 1.5V, ID = 1.0A
VDS =10V, ID = 6A
VGS = 0V, IS = 2A
RDS (ON)
⎯
32
43
56
80
55
70
90
130
|Yfs|
VSD
⎯
⎯
8
0.7
⎯
1.1
S
V
Ciss
Coss
Crss
⎯
⎯
⎯
555
112
84
⎯
⎯
⎯
pF
pF
pF
Test Condition
VDS = 10V, VGS = 0V
f = 1.0MHz
1. Device mounted on FR-4 PCB, or minimum recommended pad layout with 2oz. copper pads.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
DMN2100UDM
Document number: DS31186 Rev. 4 - 2
1 of 4
www.diodes.com
January 2009
© Diodes Incorporated
DMN2100UDM
10
10
VDS = 5V
Pulsed
9
8
ID , DRAIN CURRENT (A)
8
NEW PRODUCT
6
4
2
7
6
5
4
TA = 150°C
3
TA = 85°C
2
1
0
0
0.5
1
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
T A = 25°C
TA = -55°C
1
1.5
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2
1.6
1.4
1.2
VGS = 1.8V
VGS = 1.5V
0.1
1.0
VGS = 2.5V
0.8
0.01
0.01
0.6
0.1
1
10
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
0.8
Ciss
ID = 250µA
C CAPACITANCE (pF)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.0
0.6
0.4
Coss
Crss
0.2
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
DMN2100UDM
Document number: DS31186 Rev. 4 - 2
2 of 4
www.diodes.com
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Total Capacitance
20
January 2009
© Diodes Incorporated
DMN2100UDM
10
IS, SOURCE CURRENT (A)
TA = 150°C
0.1
TA = 125°C
TA = 85°C
0.01
TA = 25°C
0.001
TA = -55°C
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
Ordering Information
(Note 5)
Part Number
DMN2100UDM-7
Notes:
Case
SOT-26
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
2N1
Date Code Key
Year
Code
Month
Code
2007
U
Jan
1
YM
NEW PRODUCT
1
2008
V
Feb
2
Mar
3
2N1 = Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
2009
W
Apr
4
May
5
2010
X
Jun
6
Jul
7
2011
Y
Aug
8
Sep
9
2012
Z
Oct
O
Nov
N
Dec
D
Package Outline Dimensions
A
B C
H
K
J
DMN2100UDM
Document number: DS31186 Rev. 4 - 2
M
D
L
3 of 4
www.diodes.com
SOT-26
Dim Min Max Typ
A
0.35 0.50 0.38
B
1.50 1.70 1.60
C
2.70 3.00 2.80
D
⎯
⎯ 0.95
H
2.90 3.10 3.00
J
0.013 0.10 0.05
K
1.00 1.30 1.10
L
0.35 0.55 0.40
M
0.10 0.20 0.15
0°
8°
α
⎯
All Dimensions in mm
January 2009
© Diodes Incorporated
DMN2100UDM
Suggested Pad Layout
NEW PRODUCT
C2
Z
C2
C1
G
Y
Dimensions Value (in mm)
Z
3.20
G
1.60
X
0.55
Y
0.80
C1
2.40
C2
0.95
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN2100UDM
Document number: DS31186 Rev. 4 - 2
4 of 4
www.diodes.com
January 2009
© Diodes Incorporated
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