PD -97680
AUIRF1404S
AUIRF1404L
AUTOMOTIVE GRADE
Features
●
●
●
●
●
●
●
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HEXFET® Power MOSFET
Advanced Planar Technology
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
VDSS
40V
RDS(on) typ.
max.
ID (Silicon Limited)
3.5mΩ
4.0mΩ
162A
ID (Package Limited)
75A
h
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
S
D
S
D
G
D2Pak
AUIRF1404S
TO-262
AUIRF1404L
G
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
Parameter
ci
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
c
ei
dv/dt
TJ
TSTG
i
i
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
di
c
Max.
Units
h
h
162
115
75
650
3.8
200
1.3
± 20
519
95
20
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
k
Junction-to-Case
Junction-to-Ambient (PCB Mounted, steady-state)
j
Typ.
Max.
Units
–––
–––
0.75
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/07/11
AUIRF1404S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
40
–––
–––
2.0
106
–––
–––
–––
–––
–––
0.036
3.5
–––
–––
–––
–––
–––
–––
–––
–––
4.0
4.0
–––
20
250
200
-200
V
V/°C
mΩ
V
S
μA
nA
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 95A
VDS = VGS, ID = 250μA
VDS = 25V, ID = 60A
VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
f
i
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Conditions
Min. Typ. Max. Units
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
–––
–––
–––
–––
–––
–––
–––
–––
160
35
42
17
140
72
26
7.5
200
–––
60
–––
–––
–––
–––
–––
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance (Time Related)
–––
–––
–––
–––
–––
–––
7360
1680
240
6630
1490
1540
–––
–––
–––
–––
–––
–––
nC
ns
nH
pF
ID = 95A
VDS = 32V
VGS = 10V
VDD = 20V
ID = 95A
RG = 2.5Ω
RD = 0.21Ω
fi
fi
Between lead,
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
i
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ISM
d
VSD
trr
Qrr
ton
Conditions
Min. Typ. Max. Units
–––
–––
–––
–––
162
h
650
A
A
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 95A, VGS = 0V
TJ = 25°C, IF = 95A
di/dt = 100A/μs
D
f
S
–––
–––
1.3
V
–––
71
110
ns
–––
180
270
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
fi
Notes:
Repetitive rating; pulse width limited by
Calculated continuous current based on maximum allowable
Starting TJ = 25°C, L = 0.12mH
Use IRF1404 data and test conditions.
max. junction temperature. (See fig. 11)
RG = 25Ω, IAS = 95A. (See Figure 12)
ISD ≤ 95A, di/dt ≤ 150A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS.
2
junction temperature. Package limitation current is 75A.
When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
Rθ is measured at TJ approximately 90°C.
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AUIRF1404S/L
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
ESD
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
D2Pak
MSL1
TO-262
N/A
Machine Model
Class M4 (+/- 425V)
AEC-Q101-002
Human Body Model
Class H2 (+/- 4000V)
AEC-Q101-001
†††
Charged Device
Model
Class C5 (+/- 1125V)
AEC-Q101-005
†††
RoHS Compliant
†††
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRF1404S/L
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
4.5V
100
100
4.5V
20μs PULSE WIDTH
TJ = 25 °C
10
0.1
1
10
10
0.1
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 175 ° C
100
V DS = 25V
20μs PULSE WIDTH
5.0
6.0
7.0
8.0
Fig 3. Typical Transfer Characteristics
4
10
100
Fig 2. Typical Output Characteristics
1000
VGS , Gate-to-Source Voltage (V)
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
10
4.0
20μs PULSE WIDTH
TJ = 175 °C
9.0
ID = 159A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRF1404S/L
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
10000
Ciss
8000
6000
4000
Coss
2000
20
VGS , Gate-to-Source Voltage (V)
12000
1
10
12
8
4
0
100
VDS , Drain-to-Source Voltage (V)
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
80
120
160
200
240
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 175 ° C
1000
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
VDS = 32V
VDS = 20V
16
Crss
0
ID = 95A
100
10us
100us
100
TJ = 25 ° C
10
1
0.4
V GS = 0 V
0.8
1.2
1.6
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
2.4
1ms
10ms
10
1
TC = 25 °C
TJ = 175 °C
Single Pulse
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF1404S/L
RD
V DS
200
VGS
LIMITED BY PACKAGE
160
ID , Drain Current (A)
D.U.T.
RG
+
-
V DD
10V
120
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
80
Fig 10a. Switching Time Test Circuit
40
VDS
0
25
50
75
100
125
150
175
90%
TC , Case Temperature ( °C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJC )
1
D = 0.50
0.20
0.1
0.10
PDM
0.05
t1
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF1404S/L
15V
D.U.T
RG
+
- VDD
IAS
20V
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
DRIVER
L
VDS
1200
1000
A
ID
39A
67A
95A
TOP
BOTTOM
800
600
400
200
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature( ° C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
50
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
V DSav , Avalanche Voltage ( V )
VG
48
46
44
42
.2μF
.3μF
D.U.T.
+
V
- DS
40
0
20
40
60
80
100
IAV , Avalanche Current ( A)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
Fig 13b. Gate Charge Test Circuit
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7
AUIRF1404S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-channel HEXFET® Power MOSFETs
8
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AUIRF1404S/L
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRF1404S
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
AUIRF1404S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUIRF1404L
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF1404S/L
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRF1404S/L
Ordering Information
Base part
number
Package Type
AUIRF1404S
D2Pak
AUIRF1404L
TO-262
12
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Tube
Complete Part Number
Quantity
50
800
800
50
AUIRF1404S
AUIRF1404STRL
AUIRF1404STRR
AUIRF1404L
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AUIRF1404S/L
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IRs
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and
is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with
alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation.
Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service
voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into
the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR
product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any
such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
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and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military
grade products, is solely at the Buyers own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation
AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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13