AOSMD AO4485 P-channel enhancement mode field effect transistor Datasheet

AO4485
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4485/L uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a DC-DC converter
application.
AO4485 and AO4485L are electrically identical.
-RoHS Compliant
-AO4485L is Halogen Free
VDS (V) = -40V
ID = -10A
RDS(ON) < 15mΩ
RDS(ON) < 20mΩ
(VGS = -10V)
(VGS = -10V)
(VGS = -4.5V)
D
S
D
S
D
S
D
G
D
G
S
SOIC-8
Absolute Maximum Ratings TJ=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
VDS
Drain-Source Voltage
-40
VGS
±20
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
TA=70°C
Pulsed Drain Current
ID
IDM
B
Avalanche Current G
Repetitive avalanche energy L=0.3mH
Power Dissipation
A
G
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
-9
-8
IAR
-28
EAR
118
TJ, TSTG
Symbol
t ≤ 10s
Steady State
Steady State
-10
-120
PD
TA=70°C
-12
RθJA
RθJL
V
A
mJ
3.1
1.7
2.0
1.1
-55 to 150
Typ
31
59
16
Units
V
Max
40
75
24
W
°C
Units
°C/W
°C/W
°C/W
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AO4485
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID = -250µA, VGS = 0V
-40
-1
TJ = 55°C
-5
Gate-Body leakage current
VDS = 0V, VGS = ±20V
VGS(th)
Gate Threshold Voltage
VDS = VGS ID = -250µA
-1.7
ID(ON)
On state drain current
VGS = -10V, VDS = -5V
-120
±100
VGS = -10V, ID = -10A
TJ=125°C
Static Drain-Source On-Resistance
VDS = -5V, ID = -10A
25
-0.7
Rg
Gate resistance
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
2500
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2.5
Units
µA
nA
V
A
20
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
15
23
Diode Forward Voltage
IS = -1A,VGS = 0V
Maximum Body-Diode Continuous Current
Output Capacitance
12.5
16
VSD
Crss
-2.5
19
Forward Transconductance
Coss
-1.9
VGS = -4.5V, ID = -8A
gFS
IS
Max
V
VDS = -40V, VGS = 0V
IGSS
RDS(ON)
Typ
mΩ
S
-1
V
-3
A
3000
pF
260
pF
180
pF
4
6
Ω
42
55
nC
18.6
nC
7
nC
Gate Drain Charge
8.6
nC
Turn-On DelayTime
9.4
ns
20
ns
55
ns
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=-10V, VDS=-20V, ID=-10A
VGS=-10V, VDS=-20V,
RL= 2Ω, RGEN=3Ω
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-10A, dI/dt=100A/µs
38
Qrr
Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs
47
30
ns
49
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
0
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C.
Rev0 April 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4485
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
120
100
80
-10V
80
-4V
60
ID(A)
ID (A)
VDS= -5V
-4.5V
60
40
-3.5V
40
125°C
20
20
VGS= -3V
25°C
0
0
0
1
2
3
4
5
1.5
20
2.5
3
3.5
4
4.5
5
Normalized On-Resistance
1.8
VGS= -4.5V
18
RDS(ON) (mΩ)
2
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Figure 1: On-Region Characteristics
16
14
VGS= -10V
12
10
0
4
1.4
VGS= -4.5V
ID= -7.5A
1.2
1.0
0.8
I12
dI/dt=100A/µs
20
F=-6.5A,16
8
VGS= -10V
ID= -10A
1.6
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+02
35
ID= -10A
1E+01
30
25
-IS (A)
RDS(ON) (mΩ)
1E+00
125°C
1E-01
125°C
1E-02
20
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISIN
1E-03
25°C
25°C
OUT OF 15
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,
1E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1E-05
10
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4485
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4000
10
VDS= 15V
ID= -10A
3500
Capacitance (pF)
-VGS (Volts)
8
6
4
2
Ciss
3000
2500
2000
1500
Crss
1000
Coss
500
0
0
0
5
10
15
20
25
30
35
40
0
45
10
20
30
1000
1000
TJ(Max)=150°C
TA=25°C
100
10
100µs
1
1ms
10ms
100ms
10s
RDS(ON)
limited
0.1
TJ(Max)=150°C
TA=25°C
DC
0.01
0.1
Power (W)
-ID (Amps)
10µs
10
100
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
10
0.01
1
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
1
0.0001
IF=-6.5A, dI/dt=100A/µs
1
-VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
40
-VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISIN
OUT OF SUCH
0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT
SingleNOTICE.
Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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