AO4485 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4485/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. AO4485 and AO4485L are electrically identical. -RoHS Compliant -AO4485L is Halogen Free VDS (V) = -40V ID = -10A RDS(ON) < 15mΩ RDS(ON) < 20mΩ (VGS = -10V) (VGS = -10V) (VGS = -4.5V) D S D S D S D G D G S SOIC-8 Absolute Maximum Ratings TJ=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage -40 VGS ±20 Gate-Source Voltage TA=25°C Continuous Drain Current A TA=70°C Pulsed Drain Current ID IDM B Avalanche Current G Repetitive avalanche energy L=0.3mH Power Dissipation A G TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. -9 -8 IAR -28 EAR 118 TJ, TSTG Symbol t ≤ 10s Steady State Steady State -10 -120 PD TA=70°C -12 RθJA RθJL V A mJ 3.1 1.7 2.0 1.1 -55 to 150 Typ 31 59 16 Units V Max 40 75 24 W °C Units °C/W °C/W °C/W www.aosmd.com AO4485 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = -250µA, VGS = 0V -40 -1 TJ = 55°C -5 Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = -250µA -1.7 ID(ON) On state drain current VGS = -10V, VDS = -5V -120 ±100 VGS = -10V, ID = -10A TJ=125°C Static Drain-Source On-Resistance VDS = -5V, ID = -10A 25 -0.7 Rg Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge 2500 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 2.5 Units µA nA V A 20 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance 15 23 Diode Forward Voltage IS = -1A,VGS = 0V Maximum Body-Diode Continuous Current Output Capacitance 12.5 16 VSD Crss -2.5 19 Forward Transconductance Coss -1.9 VGS = -4.5V, ID = -8A gFS IS Max V VDS = -40V, VGS = 0V IGSS RDS(ON) Typ mΩ S -1 V -3 A 3000 pF 260 pF 180 pF 4 6 Ω 42 55 nC 18.6 nC 7 nC Gate Drain Charge 8.6 nC Turn-On DelayTime 9.4 ns 20 ns 55 ns Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=-10V, VDS=-20V, ID=-10A VGS=-10V, VDS=-20V, RL= 2Ω, RGEN=3Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-10A, dI/dt=100A/µs 38 Qrr Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs 47 30 ns 49 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. 0 F. The current rating is based on the t ≤ 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C. Rev0 April 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4485 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 120 100 80 -10V 80 -4V 60 ID(A) ID (A) VDS= -5V -4.5V 60 40 -3.5V 40 125°C 20 20 VGS= -3V 25°C 0 0 0 1 2 3 4 5 1.5 20 2.5 3 3.5 4 4.5 5 Normalized On-Resistance 1.8 VGS= -4.5V 18 RDS(ON) (mΩ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 16 14 VGS= -10V 12 10 0 4 1.4 VGS= -4.5V ID= -7.5A 1.2 1.0 0.8 I12 dI/dt=100A/µs 20 F=-6.5A,16 8 VGS= -10V ID= -10A 1.6 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 35 ID= -10A 1E+01 30 25 -IS (A) RDS(ON) (mΩ) 1E+00 125°C 1E-01 125°C 1E-02 20 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN 1E-03 25°C 25°C OUT OF 15 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1E-05 10 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4485 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4000 10 VDS= 15V ID= -10A 3500 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 3000 2500 2000 1500 Crss 1000 Coss 500 0 0 0 5 10 15 20 25 30 35 40 0 45 10 20 30 1000 1000 TJ(Max)=150°C TA=25°C 100 10 100µs 1 1ms 10ms 100ms 10s RDS(ON) limited 0.1 TJ(Max)=150°C TA=25°C DC 0.01 0.1 Power (W) -ID (Amps) 10µs 10 100 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 10 0.01 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1 0.0001 IF=-6.5A, dI/dt=100A/µs 1 -VDS (Volts) ZθJA Normalized Transient Thermal Resistance 40 -VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH 0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT SingleNOTICE. Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com