PD - 95345A
IRF7501PbF
HEXFET® Power MOSFET
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Generation V Technology
Ulrtra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Lead-Free
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
VDSS =20V
RDS(on) = 0.135Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGSM
VGS
dv/dt
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage Single Pulse tp<10μs
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
20
2.4
1.9
19
1.25
0.8
0.01
16
± 12
5.0
-55 to + 150
240 (1.6mm from case)
Units
V
A
W
W
W/°C
V
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
Max.
Units
100
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
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1
02/13/12
IRF7501PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
0.70
2.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.041
0.085
0.120
–––
–––
–––
–––
–––
–––
5.3
0.84
2.2
5.7
24
15
16
260
130
61
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250μA
––– V/°C Reference to 25°C, ID = 1mA
0.135
VGS = 4.5V, ID = 1.7A
Ω
0.20
VGS = 2.7V, ID = 0.85A
–––
V
VDS = VGS, ID = 250μA
–––
S
VDS = 10V, ID = 0.85A
1.0
VDS = 16V, VGS = 0V
μA
25
VDS = 16V, V GS = 0V, TJ = 125°C
100
VGS = 12V
nA
-100
VGS = -12V
8.0
ID = 1.7A
1.3
nC VDS = 16V
3.3
VGS = 4.5V, See Fig. 9
–––
VDD = 10V
–––
ID = 1.7A
ns
–––
RG = 6.0Ω
–––
R D = 5.7Ω
–––
VGS = 0V
–––
pF
VDS = 15V
–––
ƒ = 1.0MHz, See Fig. 8
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
1.25
–––
–––
19
–––
–––
–––
–––
39
37
1.2
59
56
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IF = 1.7A
di/dt = 100A/μs
D
S
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300μs; duty cycle ≤ 2%
ISD ≤ 1.7A, di/dt ≤ 66A/μs, VDD ≤ V(BR)DSS,
Surface mounted on FR-4 board, t ≤10sec
max. junction temperature. ( See fig. 10 )
TJ ≤ 150°C
2
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IRF7501PbF
100
100
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1
0.1
1.5V
20μs PULSE WIDTH
TJ = 25°C
A
0.01
0.1
1
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
10
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
TOP
TOP
10
1
1.5V
0.1
10
VDS , Drain-to-Source Voltage (V)
1
10
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
ISD , Reverse Drain Current (A)
100
I D , Drain-to-Source Current (A)
20μs PULSE WIDTH
TJ = 150°C
A
0.01
0.1
10
TJ = 150°C
TJ = 25°C
1
V DS = 10V
20μs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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A
4.0
10
TJ = 150°C
TJ = 25°C
1
0.1
0.4
VGS = 0V
0.6
0.8
1.0
1.2
1.4
1.6
A
1.8
VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
IRF7501PbF
I D = 1.7A
RDS(on) , Drain-to-Source On Resistance ( Ω )
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
0.8
0.6
0.4
V
GS
0.2
VGS = 5.0V
0.0
A
0
80 100 120 140 160
2
TJ , Junction Temperature (°C)
4
6
I D , Drain Current (A)
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 5. Normalized On-Resistance
Vs. Temperature
R DS(on) , Drain-to-Source On Resistance ( Ω ) (Ω
= 2.5V
0.13
0.11
0.09
I D = 2.4A
0.07
0.05
2
3
4
5
6
7
8
A
V GS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
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A
IRF7501PbF
500
-VGS , Gate-to-Source Voltage (V)
400
C, Capacitance (pF)
10
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
300
Coss
200
Crss
100
0
1
10
100
A
I D = 1.7A
VDS = 16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 9
0
0
VDS , Drain-to-Source Voltage (V)
2
4
6
8
10
Q G , Total Gate Charge (nC)
Fig 9. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
0.01
1
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
A
IRF7501PbF
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2μF
12V
.3μF
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
IG
Charge
ID
Current Sampling Resistors
Fig 11a. Basic Gate Charge Waveform
Fig 11b. Gate Charge Test Circuit
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 12a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 12b. Switching Time Waveforms
6
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IRF7501PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13 For N Channel HEXFETS
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IRF7501PbF
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
DIM
D
3
-B-
8 7 6 5
3
H
E
0.25 (.010)
-A-
M
A
M
D D D D
D1 D1 D2 D2
8 7 6 5
8 7 6 5
SINGLE
DUAL
1 2 3 4
1 2 3 4
INCHES
MILLIMETERS
MIN
MAX
MIN
A
.036
.044
0.91
MAX
1.11
A1
.004
.008
0.10
0.20
B
.010
.014
0.25
0.36
C
.005
.007
0.13
0.18
D
.116
.120
2.95
3.05
e
.0256 BASIC
0.65 BASIC
e1
.0128 BASIC
0.33 BASIC
E
.116
.120
2.95
3.05
H
.188
.198
4.78
5.03
e
L
.016
.026
0.41
0.66
6X
θ
0°
6°
1 2 3 4
S S S G
S1 G1 S2 G2
0°
6°
e1
RECOMMENDED FOOTPRINT
θ
1.04
( .041 )
8X
A
-CB
0.10 (.004)
A1
8X
0.08 (.003)
M
C A S
L
8X
B S
C
0.38
8X
( .015 )
8X
3.20
( .126 )
4.24
5.28
( .167 ) ( .208 )
NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
0.65 6X
( .0256 )
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
Micro8 Part Marking Information
EXAMPLE: THIS IS AN IRF7501
LOT CODE (XX)
DAT E CODE (YW) - S ee table below
Y = YEAR
W = WEEK
P = DES IGNAT ES LEAD - FREE
PRODUCT (OPTIONAL)
PART NUMBER
WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
WW = (27-52) IF PRECEDED BY A LET T ER
W
YEAR
Y
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF7501PbF
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/2012
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