Infrared LED Chip OPA9433K GaAs/GaAs 1. Material Substrate GaAs (N Type) Epitaxial Layer GaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Reverse Voltage VR 8 Power PO 5.0 λP Wavelength Typ Max Unit Condition 1.46 1.55 V IF=30mA V IR=10uA 7.5 mW IF=20mA 940 nm IF=20mA ∆λ 45 nm IF=20mA ※ Note : Power is measured by Sorter E/T system with bare chip. (b) Bottom Area (c) Bonding Pad (d) Chip Thickness (e) Junction Height --------------------- 10.8mil x 10.8mil --------------------- 11.8mil x 11.8mil --------------------140um 10mil --------------------7mil --------------------- (b) (d) (a) P Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr N Epi (e) P Epi (c) Substrate 4. Mechanical Data (a) Emission Area N Side Electrode