RF NBB-312 Cascadable broadband gaas mmic amplifier dc to 12ghz Datasheet

NBB-312
NBB-312
Cascadable Broadband GaAs MMIC Amplifier
DC to 12GHz
The NBB-312 cascadable broadband InGaP/GaAs MMIC amplifier is a
low-cost, high-performance solution for general purpose RF and
microwave amplification needs. This 50Ω gain block is based on a
reliable HBT proprietary MMIC design, providing unsurpassed
performance for small-signal applications. Designed with an external
bias resistor, the NBB-312 provides flexibility and stability. The NBB312 is packaged in a low cost, surface-mount ceramic package,
providing ease of assembly for high-volume tape-and-reel
requirements. It is available in either 1,000 or 3,000 piece-per-reel
quantities. Connectorized evaluation board designs optimized for high
frequency are also available for characterization purposes.
Package: MPGA, Bowtie, 3x3,
Ceramic
Features
■
Reliable, Low-Cost HBT Design
■
12.5dB Gain
■
High P1dB of
+15.8dBm at 6GHz
■
Single Power Supply Operation
■
50Ω I/O Matched for High
Frequency Use
Applications
■
Narrow and Broadband
Commercial and Military Radio
Designs
■
Linear and Saturated Amplifiers
■
Gain Stage or Driver Amplifiers
for MWRadio/Optical Designs
(PTP/PMP/LMDS/UNII/VSAT/
WiFi/Cellular/DWDM)
Functional Block Diagram
Ordering Information
NBB-312
Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz
NBB-312-T1
Tape & Reel, 1000 Pieces
NBB-312-E
Fully Assembled Evaluation Board
NBB-X-K1
Extended Frequency InGaP Amp Designer’s Tool Kit
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131014
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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NBB-312
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Power
+20
dBm
Power Dissipation
350
mW
Device Current
70
mA
Channel Temperature
150
°C
Operating Temperature
-45 to +85
°C
Storage Temperature
-65 to +150
°C
Caution! ESD sensitive device.
RFMD Green: RoHS compliant per EU
Directive 2011/65/EU, halogen free per
IEC 61249-2-21, <1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Exceeding any one or a combination of these limits may cause permanent damage.
Nominal Operating Parameters
Specification
Parameter
Unit
Min
Typ
Condition
Max
General Performance
VD = +4.6V, ICC = 50mA, Z0 = 50Ω, TA = +25°C
Small Signal Power Gain, S21
12.9
dB
f = 0.1GHz to 1.0GHz
12.9
dB
f = 1.0GHz to 4.0GHz
11.7
dB
f = 4.0GHz to 8.0GHz
9.7
dB
f = 8.0GHz to 12.0GHz
Gain Flatness, GF
±0.6
dB
f = 0.1GHz to 8.0GHz
Input VSWR
1.2:1
f = 0.1GHz to 7.0GHz
1.65:1
f = 7.0GHz to 10.0GHz
2.0:1
f = 10.0GHz to 12.0GHz
Output VSWR
1.5:1
f = 0.1GHz to 12.0GHz
Bandwidth, BW
11.0
GHz
BW3 (3dB)
Output Power at -1dB
Compression, P1dB
14.9
dBm
f = 2.0GHz
15.8
dBm
f = 6.0GHz
15.0
dBm
f = 8.0GHz
12.0
dBm
f = 12.0GHz
4.9
dB
f = 3.0GHz
Third Order Intercept, IP3
+24.0
dBm
f = 2.0GHz
Reverse Isolation, S12
-15.6
dB
12.0
9.0
Noise Figure, NF
Device Voltage, VD
Gain Temperature Coefficient,
/
4.4
4.6
-0.0015
4.8
f = 0.1GHz to 12.0GHz
V
dB/°C
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131014
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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NBB-312
Specification
Parameter
Unit
Min
Typ
Condition
Max
MTTF versus Temperature
at ICC = 50mA
Case Temperature
85
°C
Junction Temperature
123
°C
>1,000,000
hours
152
°C/W
MTTF
Thermal Resistance
θJC
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131014
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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NBB-312
Pin Names and Descriptions
Pin
Name
Description
1-3
GND
4
RFIN
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used
in most applications. DC coupling of the input is not allowed,
because this will override the internal feedback loop and cause
temperature instability.
5-7
GND
Ground connection. For best performance, keep traces physically
short and connect immediately to ground plane.
8
RFOUT
RF output and bias pin. Biasing is accomplished with an external
series resistor and choke inductor to VCC. The resistor is selected
to set the DC current into this pin to a desired level. The resistor
value is determined by the following equation:
Interface Schematic
Ground connection. For best performance, keep traces physically
short and connect immediately to ground plane.
Care should also be taken in the resistor selection to ensure that
the current into the part never exceeds maximum datasheet
operating current over the planned operating temperature. This
means that a resistor between the supply and this pin is always
required, even if a supply near 8.0V is available, to provide DC
feedback to prevent thermal runaway. Alternatively, a constant
current supply circuit may be implemented. Because DC is present
on this pin, a DC blocking capacitor, suitable for the frequency of
operation, should be used in most applications. The supply side of
the bias network should also be well bypassed.
9
GND
Ground connection. For best performance, keep traces physically
short and connect immediately to ground plane.
Package Drawing
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131014
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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NBB-312
Recommended PCB Layout
Typical Bias Configuration
NOTE: Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
Recommended Bias Resistor Values
Supply Voltage, VCC (V)
8
10
12
15
20
Bias Resistor, RCC (Ω)
60
100
140
200
300
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131014
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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NBB-312
Application Notes
Bonding Temperature (Wedge or Ball)
It is recommended that the heater block temperature be set to 160°C ± 10°C.
Extended Frequency InGaP Amplifier Designer’s Tool Kit (NBB-X-K1)
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB- series InGap HBT gain block amplifiers. Each tool
kit contains the following:




5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers
5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers
2 Broadband Evaluation Boards and High Frequency SMA Connectors
Broadband Bias Instructions and Specification Summary Index for ease of operation
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131014
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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NBB-312
Tape and Reel Dimensions (all dimensions in millimeters)
330 mm (13”) REEL
ITEMS
FLANGE
HUB
Diameter
Thickness
Space Between Flange
Outer Diameter
Spindle Hole Diameter
Key Slit Width
Key Slit Diameter
SYMBOL
B
T
F
O
S
A
D
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
Micro-X, MPGA
SIZE (mm)
SIZE (inches)
330 +0.25/-4.0
18.4 MAX
12.4 +2.0
102.0 REF
13.0 +0.5/-0.2
1.5 MIN
20.2 MIN
13.0 +0.079/-0.158
0.724 MAX
0.488 +0.08
4.0 REF
0.512 +0.020/-0.008
0.059 MIN
0.795 MIN
DS131014
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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NBB-312
Typical Performance
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131014
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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NBB-312
Typical Performance (continued)
Note: The s-parameter gain results shown above include device performance as well as evaluation board and connector loss
variations. The insertion losses of the evaluation board and connectors are as follows:
1GHz to 4GHz = -0.06dB
5GHz to 9GHz = -0.22dB
10GHz to 14GHz = -0.50dB
15GHz to 20GHz = -1.08dB
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131014
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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NBB-312
RoHS Banned Material Content
RoHS Compliant:
Yes
Package Total Weight in Grams (g):
0.028
Compliance Date Code:
N/A
Bill of Materials Revision:
-
Pb Free Category:
e4
Bill of Materials
Die
Molding Compound
Lead Frame
Die Attach Epoxy
Wire
Solder Plating
Pb
0
0
0
0
0
0
Cd
0
0
0
0
0
0
Hg
0
0
0
0
0
0
Parts Per Million (PPM)
Cr VI
0
0
0
0
0
0
PBB
0
0
0
0
0
0
PBDE
0
0
0
0
0
0
This RoHS banned material content declaration was prepared solely on information, including analytical data, provided to RFMD
by its suppliers, and applies to the Bill of Materials (BOM) revision noted
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131014
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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