Chenmko CHT32CZPT Pnp silicon transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHT32CZPT
SURFACE MOUNT
PNP SILICON Transistor
VOLTAGE 100 Volts
CURRENT 3 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SC-73/SOT-223
FEATURE
* Small flat package. ( SC-73/SOT-223 )
1.65+0.15
* Suitable for high packing density.
* High saturation current capability.
6.50+0.20
0.90+0.05
3.5+0.2
7.0+0.3
3.00+0.10
CONSTRUCTION
0.9+0.2
2.0+0.3
* PNP SILICON Transistor
0.70+0.10
0.70+0.10
2.30+0.1
2.0+0.3
0.27+0.05
0.01~0.10
0.70+0.10
4.60+0.1
1
1 Base
CIRCUIT
3
2
2 Emitter
C (3)
3 Collector ( Heat Sink )
(1) B
E (2)
SC-73/SOT-223
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
VCEO
collector-emitter voltage
open base
−
VEBO
emitter-base voltage
open collector
−
IC
collector current (DC)
−
-5.0
-3
ICM
Peak Collector Current
−
-6.0
A
Ptot
total power dissipation
−
2
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
-100
-100
V
V
V
A
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-7
RATING CHARACTERISTIC CURVES ( CHT32CZPT )
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICEO
collector cut-off current
VCE= -60 V
−
-300
uA
IEBO
emitter cut-off current
VEB=-5.0V
−
-1
mA
hFE
DC current gain
IC = -1.0A; VCE = -4V
IC = -3.0A; VCE = -4V
25
10
−
100
VCEsat
collector-emitter saturation
voltage
IC=-3.0A,IB=-375mA
−
-1.2
V
VBEON
base-emitter saturation voltage
IC =- 3.0A; VCE = -4V
−
-1.8
V
fT
transition frequency
IC = -500mA; VCE = 1 0 V;
f = 10 MHz
3.0
−
MHz
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