Data Sheet HAT1096C R07DS1175EJ0500 (Previous: REJ03G1233-0400) Rev.5.00 Mar 19, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 225 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 2.5 V gate drive devices. • High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 2 3 4 5 D DD D 4 1 2 3 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 Ratings –20 ±12 –1 –4 Unit V V A A IDR PchNote 2 Tch Tstg –1 790 150 –55 to +150 A mW °C °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), Ta = 25°C R07DS1175EJ0500 Rev.5.00 Mar 19, 2014 Page 1 of 6 HAT1096C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage V(BR)DSS Min –20 Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage V(BR)GSS ±12 — — V IGSS IDSS VGS(th) — — –0.4 — — 0.6 — — — — — — — — — — 225 380 0.9 155 40 30 2 0.4 0.6 12 ±10 –1 –1.4 293 530 — — — — — — — — μA μA V mΩ mΩ S pF pF pF nC nC nC ns — — — — 18 28 8 –0.85 — — — –1.1 ns ns ns V Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time Turn - off delay time Fall time Body - Drain diode forward voltage Symbol RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF Typ — Max — Unit V Test Conditions ID = –10 mA, VGS = 0 IG = ±100 μA, VDS = 0 VGS = ±10 V, VDS = 0 VDS = –20 V, VGS = 0 ID = –1 mA, VDS = –10 V Note3 ID = –0.5 mA, VGS = –4.5 V Note3 ID = –0.5 mA, VGS = –2.5 V Note3 ID = –0.5 mA, VDS = –10 V Note3 VDS = –10 V, VGS = 0, f = 1 MHz VDS = –10 V, VGS = –4.5 V, ID = -1 A VDS = –10 V, VGS = –4.5 V, ID = -0.5 A, RL = 20 Ω, Rg = 4.7 Ω IF = –1 A, VGS = 0 Notes: 3. Pulse test R07DS1175EJ0500 Rev.5.00 Mar 19, 2014 Page 2 of 6 HAT1096C Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area Ta = 25°C,1shot pulse When using the FR4 board. –30 0.6 –3 1 –1 150 Operation in this area is limited by RDS(on) Ambient Temperature –0.01 –0.03 –0.1 –0.3 200 –4 –3 –10 –30 –100 Typical Transfer Characteristics –5 –6.0 V –4.5 V –3.5 V Pulse Test –3 –2.5 V –2 –2.0 V –1 VDS = –10 V Pulse Test 25°C –3.0 V Drain Current ID (A) Drain Current ID (A) –10 V –1 Drain to Source Voltage VDS (V) Ta (°C) Typical Output Characteristics –5 n 100 s m io at 50 s m er –0.1 –0.03 0 10 –0.3 op 0.2 100 μs = 0.4 –10 10 μs PW Drain Current ID (A) 0.8 –100 Test Condition : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), Ta = 25°C DC Channel Dissipation Pch (W) 1.0 −25°C –4 Tc = 75°C –3 –2 –1 VGS = –1.5 V –2 –4 –6 –8 0 –10 –2 –4 –6 –8 –10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 10000 –400 Pulse Test –300 –200 –1 A –100 –0.5 A ID = –0.3 A 0 Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) 0 –2 –4 –6 –8 –10 Gate to Source Voltage VGS (V) R07DS1175EJ0500 Rev.5.00 Mar 19, 2014 VGS = –2.5 V 1000 –4.5 V 100 –0.1 Pulse Test –1 –10 Drain Current ID (A) Page 3 of 6 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 600 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT1096C Pulse Test –1 A 500 –0.5 A –0.3 A 400 –2.5 V –0.5, –1 A 300 ID = –0.3 A 200 VGS = –4.5 V 100 –25 0 25 50 75 100 Case Temperature Tc 125 150 10 3 Tc = –25°C 1 25°C 0.3 75°C 0.1 0.03 VDS = –10 V Pulse Test 0.01 –0.01 –0.03 –0.1 –0.3 –2 VDD = –5 V –10 V –20 V –4 –30 –6 2 1000 Capacitance C (pF) –10 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 0 VDD = –5 V –10 V –20 V 1 Coss 30 Crss 10 VGS = 0 f = 1 MHz –4 –12 –8 –16 –20 Gate Charge Qg (nc) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage Switching Characteristics 100 VGS = –4.5 V, VDD = –10 V Rg = 4.7 Ω, Ta = 25°C –5 V Switching Time t (ns) Reverse Drain Current IDR (A) Ciss 100 1 0 –8 4 3 300 3 –5 –4 VGS = 0, 5 V –3 –2 –1 Pulse Test 0 –10 Typical Capacitance vs. Drain to Source Voltage 0 –40 0 –3 Drain Current ID (A) (°C) Dynamic Input Characteristics –20 –1 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage VSD (V) R07DS1175EJ0500 Rev.5.00 Mar 19, 2014 td(off) tr td(on) 10 tf 1 –0.1 –1 –10 Drain Current ID (A) Page 4 of 6 HAT1096C Switching Time Test Circuit Waveform Vin Vout Monitor Vin Monitor 10% D.U.T. 90% RL 4.7 Ω Vin –4.5 V Vout td(on) R07DS1175EJ0500 Rev.5.00 Mar 19, 2014 90% 90% VDD = –10 V 10% 10% tr td(off) tf Page 5 of 6 HAT1096C Package Dimensions JEITA Package Code ⎯ Package Name CMFPAK-6 RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g D A e c E A HE A x M LP L b S A e A2 Reference Symbol A A1 y S S e1 b l1 b1 c Pattern of terminal position areas A-A Section A A1 A2 b c D E e HE L LP x y b1 e1 l1 Dimension in Millimeters Min 0.7 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 Nom 0.2 0.15 2.0 1.7 0.65 2.1 0.2 Max 0.8 0.01 0.79 0.3 0.25 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.3 1.9 0.4 Ordering Information Orderable Part Number HAT1096C-EL-E Note: Quantity 3000 pcs Shipping Container Taping For some grades, production may be terminated. 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