Kexin CZT5401 Pnp silicon transistor Datasheet

Transistors
SMD Type
PNP Silicon Transistor
CZT5401
SOT-223
Unit: mm
0.1max
+0.05
0.90-0.05
Features
+0.1
3.00-0.1
+0.15
1.65-0.15
+0.2
3.50-0.2
6.50
+0.2
-0.2
+0.2
0.90-0.2
+0.3
7.00-0.3
4
1 Base
1
2 Collector
3
2
+0.1
0.70-0.1
2.9
4.6
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-Base Voltage
Parameter
VCBO
160
V
Collector-Emitter Voltage
VCEO
150
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
600
mA
Power Dissipation
PD
2
W
TJ,Tstg
-65 to 150
ÈJA
62.5
Operating and Storage Junction Temperature
Thermal Resistance
/W
Electrical Characteristics Ta = 25
Symbol
Testconditons
Min
Max
Unit
ICBO
VCB=100V
50
nA
ICBO
VCB=100V, TA=150
50
mA
50
nA
IEBO
VEB=3.0V
BVCBO
IC=100ìA
160
V
BVCEO
IC=1.0mA
150
V
BVEBO
IE=10ìA
5.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.2
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.5
V
VBE(SAT)
IC=10mA, IB=1.0mA
1.0
V
VBE(SAT)
IC=50mA, IB=5.0mA
1.0
V
hFE
fT
VCE=5.0V, IC=1.0mA
50
VCE=5.0V, IC=10mA
60
VCE=5.0V, IC=50mA
50
VCE=10V, IC=10mA, f=100MHz
100
300
MHz
6.0
pF
40
200
Cob
VCB=10V, IE=0, f=1.0MHz
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
NF
VCE=5.0V, IC=200mA, RS=10
Ù,f=10Hz to 15.7kHz
240
8.0
dB
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