Transistors SMD Type PNP Silicon Transistor CZT5401 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1 2.9 4.6 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO 160 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5 V Collector Current IC 600 mA Power Dissipation PD 2 W TJ,Tstg -65 to 150 ÈJA 62.5 Operating and Storage Junction Temperature Thermal Resistance /W Electrical Characteristics Ta = 25 Symbol Testconditons Min Max Unit ICBO VCB=100V 50 nA ICBO VCB=100V, TA=150 50 mA 50 nA IEBO VEB=3.0V BVCBO IC=100ìA 160 V BVCEO IC=1.0mA 150 V BVEBO IE=10ìA 5.0 V VCE(SAT) IC=10mA, IB=1.0mA 0.2 V VCE(SAT) IC=50mA, IB=5.0mA 0.5 V VBE(SAT) IC=10mA, IB=1.0mA 1.0 V VBE(SAT) IC=50mA, IB=5.0mA 1.0 V hFE fT VCE=5.0V, IC=1.0mA 50 VCE=5.0V, IC=10mA 60 VCE=5.0V, IC=50mA 50 VCE=10V, IC=10mA, f=100MHz 100 300 MHz 6.0 pF 40 200 Cob VCB=10V, IE=0, f=1.0MHz hfe VCE=10V, IC=1.0mA, f=1.0kHz NF VCE=5.0V, IC=200mA, RS=10 Ù,f=10Hz to 15.7kHz 240 8.0 dB www.kexin.com.cn 1