DXT13003DK 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features Mechanical Data • BVCEO > 450V • • BVCES > 700V • Case Material: Molded Plastic, "Green" Molding Compound • BVEBO > 9V • • • IC = 1.5A high Continuous Collector Current Integrated Anti-Parallel Diode to act as free-wheeling diode Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 • Halogen and Antimony Free. “Green” Device (Note 3) • • Case: TO252 (DPAK) Terminals: Finish - Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208 Weight: 0.34 grams (approximate) TO252 (DPAK) Top View Device Schematic Top View Pin-Out Ordering Information (Note 4) Product DXT13003DK-13 Notes: Compliance Standard Marking 13003D Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 13003D = Product Type Marking Code = Manufacturer’s Code Marking YYWW = Date Code Marking YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01-53) DXT13003DK Datasheet Number: DS37297 Rev. 1 - 2 1 of 6 www.diodes.com May 2014 © Diodes Incorporated DXT13003DK Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Collector-Emitter Voltage (VBE = 0V) Characteristic VCES 700 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Continuous Collector Current Peak Pulse Collector Current (Note 5) Continuous Base Current Peak Pulse Base Current (Note 5) Unit IC 1.5 A ICM 3 A IB 0.75 A IBM 1.5 A Value 3.9 2.5 2.1 Unit Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Symbol (Note 6) (Note 7) (Note 8) (Note 9) (Note 6) (Note 7) (Note 8) (Note 9) (Note 10) PD W 1.6 32 51 59 80 RθJA RθJL 3 TJ, TSTG -55 to +150 °C/W °C ESD Ratings (Note 11) Characteristic Electrostatic Discharge - Human Body Model Symbol ESD HBM Value 8,000 Unit V JEDEC Class 3B Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. Pulse test for pulse width < 5ms, duty cycle ≤ 10%. 6. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as note (6), except the device is surface mounted on 25mm x 25mm 2oz copper. 8. Same as note (6), except the device is surface mounted on 25mm x 25mm 1oz copper. 9. Same as note (6), except mounted on minimum recommended pad (MRP) layout. 10. Thermal resistance from junction to solder-point (on the exposed collector pad). 11. Refer to JEDEC specification JESD22-A114 and JESD22-A115. DXT13003DK Datasheet Number: DS37297 Rev. 1 - 2 2 of 6 www.diodes.com May 2014 © Diodes Incorporated DXT13003DK IC Collector Current (A) IC Collector Current (A) Thermal Characteristics and Derating Information 1 VCE(sat) 100m Limit DC 100ms 1m 10ms T amb=25°C Limit 100µs 25mm x 25mm 1oz FR4 10 100 1m 1 20 D=0.2 Single Pulse 10 D=0.05 D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) Single Pulse Tamb=25°C 100 50mm x 50mm 2oz FR4 10 25mm x 25mm 1oz FR4 1m 10m 100m 1 10 100 Pulse Width (s) Tamb=25°C 30 50mm x 50mm 2oz FR4 25 20 D=0.5 15 10 D=0.05 5 0 100µ Datasheet Number: DS37297 Rev. 1 - 2 D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) 1k 4.0 3.5 50mm x 50mm 2oz FR4 3.0 25mm x 25mm 1oz FR4 2.5 2.0 1.5 1.0 0.5 0.0 0 Pulse Power Dissipation DXT13003DK Single Pulse D=0.2 Transient Thermal Impedance Max Power Dissipation (W) Max Power Dissipation (W) Transient Thermal Impedance 1 100µ 100 35 D=0.5 0 100µ 10 Safe Operating Area 40 30 100µs 50mm x 50mm 2oz FR4 VCE Collector-Emitter Voltage (V) Thermal Resistance (°C/W) Thermal Resistance (°C/W) 50 25mm x 25mm 1oz FR4 1ms T amb=25°C Safe Operating Area T amb=25°C 1s 10ms VCE Collector-Emitter Voltage (V) 60 DC 100ms 10m 1ms 1 VCE(sat) 100m 1s 10m 1 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 3 of 6 www.diodes.com May 2014 © Diodes Incorporated DXT13003DK Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage Characteristic BVCES 700 — — V IC = 100µA, VBE = 0V Collector-Emitter Breakdown Voltage BVCEO 450 — — V IC = 100µA BVEBO 9 — — V IE = 100µA ICEV — — 10 µA VCE = 700V, VBE = -1.5V hFE 20 16 5 — — — 40 30 25 — — IC = 20mA, VCE = 10V IC = 0.5A, VCE = 2V IC = 1.0A, VCE = 2V Collector-Emitter Saturation Voltage (Note 12) VCE(sat) — — — — 0.3 0.4 V IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A Base-Emitter Saturation Voltage (Note 12) VBE(sat) — — — — 1.0 V IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A VCB = 10V, f = 0.1MHz Emitter-Base Breakdown Voltage Collector Cutoff Current DC current transfer Static ratio (Note 12) 1.2 Cob — 18 — pF Transition Frequency fT 4 — — MHz Turn-on Time with Resistive Load ton — 0.35 — Storage Time with Resistive Load ts — 2.31 — Fall Time with Resistive Load tf — 0.21 — Output Capacitance Note: µs Test Condition IC = 0.1A, VCE = 10V IC = 1A,VCC = 125V, IB1 = 0.2A, IB2 = -0.2A 12. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%. Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) DXT13003DK Datasheet Number: DS37297 Rev. 1 - 2 4 of 6 www.diodes.com May 2014 © Diodes Incorporated DXT13003DK Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E TO252 Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 − − e − − 2.286 E 6.45 6.70 6.58 E1 4.32 − − H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° − All Dimensions in mm A b3 c2 L3 D E1 A2 H L4 A1 L e 2X b2 3X b a Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X2 Y2 C Y1 X1 Note: Z Dimensions Z X1 X2 Y1 Y2 C E1 Value (in mm) 11.6 1.5 7.0 2.5 7.0 6.9 2.3 E1 For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device Terminals and PCB tracking. DXT13003DK Datasheet Number: DS37297 Rev. 1 - 2 5 of 6 www.diodes.com May 2014 © Diodes Incorporated DXT13003DK IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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