OPNEXT HL6724MG Algainp laser diode Datasheet

HL6724MG
ODE-208-046 (Z)
Rev.0
Oct. 17, 2006
AlGaInP Laser Diode
Description
The HL6724MG is a 0.67 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. It is suitable as a
light source for laser pointers and optical equipments for amusement.
Features
•
•
•
•
•
Package Type
• HL6724MG: MG
Visible light output: 670 nm Typ
Single longitudinal mode
Optical output power: 5 mW CW
Low operating current: 35 mA Typ
Low operating voltage: 2.7 V Max
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Optical output power
PO
Symbol
Pulse optical output power
LD reverse voltage
PO(pulse)
VR(LD)
PD reverse voltage
Operating temperature
VR(PD)
Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%
Ratings
5
Unit
mW
6*
2
mW
V
30
–10 to +50
V
°C
–40 to +85
°C
Optical and Electrical Characteristics
(TC = 25°C)
Min
Typ
Max
Unit
Threshold current
LD operating current
Item
Ith
IOP
Symbol
—
—
25
35
35
50
mA
mA
LD operating voltage
Beam divergence
parallel to the junction
VOP
θ//
—
5
—
8
2.7
11
V
°
PO = 5 mW
PO = 5 mW, FWHM
Beam divergence
parpendicular to the junction
Astigmatism
θ⊥
22
30
40
°
PO = 5 mW, FWHM
AS
—
5
—
µm
PO = 5 mW, NA = 0.55
Lasing wavelength
Monitor current
λp
IS
660
0.4
670
0.9
680
2.0
nm
mA
PO = 5 mW
PO = 5 mW, VR(PD) = 5 V
Rev.0 Oct . 17, 2006 page 1 of 4
Test Conditions
—
PO = 5 mW
HL6724MG
Typical Characteristic Curves
Threshold Current vs. Case Temperature
100
TC = -10°C
4
Threshold current, Ith (mA)
Optical output power, PO (mW)
Optical Output Power vs. Forward Current
5
50°C
3
2
25°C
1
0
0
20
40
60
80
10
-10
100
0
Forward current, IF (mA)
20
30
40
50
Case temperature, TC (°C)
Monitor Current vs. Case Temperature
Slope Efficiency vs. Case Temperature
2.0
Monitor current, IS (mA)
1.0
Slope Efficiency, ηs (mW/mA)
10
0.8
0.6
0.4
0.2
0
-10
0
10
20
30
40
PO = 5 mW
VR(PD) = 5 V
1.5
1.0
0.5
0
-10
50
0
10
20
30
40
50
Case temperature, TC (°C)
Case temperature, TC (°C)
Lasing Wavelength vs. Case Temperature
678
Far Field Pattern
1.0
674
Relative intensity
Lasing wavelength, λp (nm)
PO = 5 mW
676
672
670
668
664
Perpendicular
TC = 25°C
PO = 5 mW
0.6
0.4
0.2
Parallel
0
-40 -30 -20 -10 0 10 20 30
Angle, θ ( ° )
662
660
-10
0.8
0
10
20
30
40
Case temperature, TC (°C)
Rev.0 Oct. 17, 2006 page 2 of 4
50
40
HL6724MG
Package Dimensions
As of July, 2002
Unit: mm
0.4 +0.1
–0
φ 5.6 +0
–0.025
1.0 ± 0.1
(90˚)
(0.4)
0.25
φ 4.1 ± 0.3
φ 3.55 ± 0.1
Glass
2.3 ± 0.2
φ 1.6 ± 0.2
1.27
6.5 ± 1.0
1.2 ± 0.1
Emitting Point
3 – φ 0.45 ± 0.1
1
1
2
3
3
2
φ 2.0 ± 0.2
OPJ Code
JEDEC
JEITA
Mass (reference value)
Rev.0 Oct. 17, 2006 page 3 of 4
LD/MG
—
—
0.3 g
HL6724MG
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright,
trademark, or other intellectual property rights for information contained in this document. OPJ bears no
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in
connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the
latest product standards or specifications before final design, purchase or use.
3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales
office before using the product in an application that demands especially high quality and reliability or where its
failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace,
aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for
life support.
4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum
rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics.
OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the
guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and
employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily
injury, fire or other consequential damage due to operation of the OPJ product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written
approval from OPJ.
7. Contact our sales office for any questions regarding this document or OPJ products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam
shall be observed or adjusted through infrared camera or equivalent.
2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses.
Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical
experiments, when you handle the product.
When disposing of the product, please follow the laws of your country and separate it from other waste such as
industrial waste and household garbage.
3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ
unless otherwise specified.
Sales Offices
Device Business Unit Opnext Japan, Inc.
Takagi Bldg., 3F, 1-3-9, Iwamoto-cho, Chiyoda-ku, Tokyo 101-0032 Japan
Tel: (03) 3865-5591
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http://www.opnext.com/jp/products/
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©2007 Opnext Japan, Inc., All rights reserved. Printed in Japan.
Colophon 2.0
Rev.0 Oct. 17, 2006 page 4 of 4
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