MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2527 2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters (inches) OUTLINE DRAWING The MGFS45V2527 is an internally impedance matched GaAs power FET especially designed for use in 2.5~2.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. 24±0.3 (0.945±0.012) (0.024±0.006) 0.6±0.15 FEATURES Class A operation Internally matched to 50 (Ω) system High output power P1dB=30W (TYP.) @f=2.5~2.7GHz High power gain GLP=12dB (TYP.) @f=2.5~2.7GHz High power added efficiency ηadd=45% (TYP.) @f=2.5~2.7GHz Loe distortion [item -51] IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L. R1.2 20.4±0.2 (0.803±0.008) APPLICATION item 01 : 2.5~2.7GHz band power amplifier item 51 : 2.5~2.7GHz band digital radio communication 16.7 (0.658) QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS=10V ID=6.5A RG=25Ω GF-38 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol (1) GATE (2) Source (FLANGE) (3) DRAIN Parameter < Keep safety first in your circuit designs! > Ratings Unit Mitsubishi Electric Corporation puts the maximum effort into VGDO Gate to drain voltage -15 V VGSO Gate to source voltage -15 V ID Drain current 22 A IGR Reverse gate current -61 mA IGF Forward gate current 76 mA PT Total power dissipation 88 W Tch Channel temperature 175 °C -65 ~ +175 °C making semiconductor products better and more reliable, but there is always the possibility that trouble may occur *1 Tstg Storage temperature *1 : Tc=25°C with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS (Ta=25°C) Symbol Test conditions Parameter VDS=3V, ID=60mA Limits Unit Min. Typ. Max — — -5 V 44 45 — dBm VGS (off) Saturated drain current P1dB Output power at 1dB gain compression GLP Linear power gain 11 12 — dB ID Drain current — 7.5 — A ηadd Power added efficiency — 45 — % IM3 3rd order IM distortion *2 -42 -45 — dBc Rth (ch-c) Thermal resistance *1 — — 1.7 °C/W VDS=10V, ID(RF off)=6.5A, f=2.5~2.7GHz ∆Vf method *1 : Channel to case *2 : item -51, 2 tone test, Po=34.5dBm Single Carrier Level, f=2.5, 2.6, 2.7GHz,∆f=5MHz MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2527 2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET TYPICAL CHARACTERISTICS Po, ηadd vs. Pin P1dB,GLP vs. f 46 16 VDS=10(V) IDS=6.5(A) 50 70 P1dB Pout VDS=10 (V) IDS=6.5(A) f=2.6 (GHz) 45 45 15 44 60 40 50 35 40 30 30 14 GLP 43 13 ηadd 42 25 20 20 10 12 41 2.45 2.5 2.55 2.6 2.65 FREQUENCY f (GHz) 11 2.75 2.7 15 0 15 20 25 30 35 INPUT POWER Pin (dBm) Po,IM3 vs. Pin 42 20 VDS=10(V) IDS=6.5(A) f1=2.700(GHz) f2=2.705(GHz) 40 10 Po 38 0 36 -10 34 -20 IM3 32 -30 30 -40 28 -50 26 -60 24 -70 14 16 18 20 22 24 26 28 30 32 34 INPUT POWER Pin (dBm S.C.L.) S Parameters ( Tc=25˚C, VDS=10V, IDS=6.5A ) f (GHz) 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 S11 Magn. Angle(deg) 0.57 165 0.54 152 0.52 138 0.45 123 0.39 106 0.30 82 0.19 37 0.18 -25 0.30 -73 Magn. 4.25 4.35 4.40 4.49 4.60 4.68 4.68 4.57 4.29 S-Parameter (TYP.) S21 S12 Angle(deg) Magn. Angle(deg) 50 0.03 15 36 0.04 0 21 0.04 -21 6 0.04 -35 -10 0.04 -60 -28 0.04 -73 -47 0.04 -89 -66 0.05 -117 -86 0.04 -133 MITSUBISHI ELECTRIC Magn. 0.15 0.13 0.12 0.12 0.12 0.13 0.12 0.13 0.10 S22 Angle(deg) -24 -37 -60 -82 -111 -134 -156 176 160