CMKD6001 SURFACE MOUNT TRIPLE ISOLATED ULTRA LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD6001 type contains three (3) Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini™ surface mount package, designed for switching applications requiring extremely low leakage. MARKING CODE: K01 SOT-363 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM 75 UNITS V 100 V IF IFRM IFSM 250 mA 500 mA 4.0 A IFSM PD 1.0 A 250 mW TJ, Tstg ΘJA -65 to +150 °C 500 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR VR=75V 500 BVR IR=100μA 100 UNITS pA V VF IF=1.0mA 0.85 V VF IF=10mA 0.95 V VF IF=100mA 1.1 V CT VR=0, f=1.0MHz IR=IF=10mA, Irr=1.0mA, RL=100Ω 2.0 pF 3.0 μs trr R5 (9-May 2011) CMKD6001 SURFACE MOUNT TRIPLE ISOLATED ULTRA LOW LEAKAGE SILICON SWITCHING DIODES SOT-363 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Anode D2 3) Anode D3 4) Cathode D3 5) Cathode D2 6) Cathode D1 MARKING CODE: K01 R5 (9-May 2011) w w w. c e n t r a l s e m i . c o m