Intersil CDP1826CE Cmos 64-word x 8-bit static ram Datasheet

CDP1826C
CMOS 64-Word x 8-Bit
Static RAM
March 1997
Features
Description
• Ideal for Small, Low-Power RAM Memory Requirements in Microprocessor and Microcomputer Applications
The CDP1826C is a general purpose, fully static, 64-word x
8-bit random-access memory, for use in CDP1800-series or
other microprocessor systems where minimum component
count and/or price performance and simplicity in use are
desirable.
• Interfaces with CDP1800-Series Microprocessors
Without Additional Address Decoding
• Daisy Chain Feature to Further Reduce External
Decoding Needs
• Multiple Chip-Select Inputs for Versatility
• Single Voltage Supply
• No Clock or Precharge Required.
Ordering Information
PACKAGE
PDIP
TEMP. RANGE
PART NUMBER
-40oC to +85oC
CDP1826CE
Pinout
CDP1826C (PDIP)
TOP VIEW
BUS 0 1
22 VDD
BUS 1 2
21 A0
BUS 2 3
20 CS/A5
BUS 3 4
19 A1
BUS 4 5
18 A2
BUS 5 6
17 A3
BUS 6 7
16 A4
BUS 7 8
15 TPA
CS1 9
14 MRD
CS2 10
13 MWR
VSS 11
12 CEO
PKG.
NO.
E22.4
The CDP1826C has 8 common data input and data-output
terminals with three-state capability for direct connection to a
standard bidirectional data bus. Two chip-select inputs - CS1
and CS2 - are provided to simplify memory-system expansion. An additional select pin, CS/A5, is provided to enable
the CDP1826C to be selected directly from the CDP1800
multiplexed address bus without additional latching or
decoding. In an 1800 system, the CS/A5 pin can be tied to
any MA address line from the CDP1800 processor. A TPA
input is provided to latch the high-order bit of this address
line as a chip-select for the CDP1826C. If this CS/A5 input is
latched high, and if CS = 1 and CS2 = 0 at the appropriate
time in the memory cycle, the CDP1826C will be enabled for
writing or reading. In a non-1800 system, the TPA pin can be
tied high, and the CS/A5 pin can be used as a normal
address input.
The six input-address buffers are gated with the chip-select
function to reduce standby current when the device is deselected, as well as to provide for a simplified power down
mode by reducing address buffer sensitivity to long fall times
from address drivers which are being powered down.
Two memory control signals, MRD and MWR, are provided
for reading from the writing to the CDP1826C. The logic is
designed so that MWR overrides MRD, allowing the chip to
be controlled from a single R/W.
A CHIP ENABLE OUTPUT is provided for daisy-chaining to
additional memories or I/O devices. This output is high
whenever the chip-select function selects the CDP1826C,
which deselects any other chip which has its CS input connected to the CDP1826C CEO output. The connected chip is
selected when the CDP1826C is deselected and the MRD
input is low. Thus, the CEO is only active for a read cycle
and can be setup so that a CEO of another device can feed
the MRD of the CDP1826C, which in turn selects a third chip
in the daisy chain.
The CDP1826C has a recommended operating voltage of
4.5V to 5.5V and is supplied in 22 lead dual-in-line plastic
packages (E suffix). The CDP1826C is also available in chip
form (H suffix).
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
6-47
File Number
1311.2
CDP1826C
CLEAR WAIT
N0 - N2 MRD
ADDR BUS
ADDR BUS
TPA
TPA
TPB
Q
DATA
CPU
CDP1800
SERIES
RAM
CDP1826C
ROM
MRD
MRD
SCO SCI
INTERRUPT
DMA - IN DMA OUT
MWR
CEO
EF1 - EF4
8-BIT BIDIRECTIONAL DATA BUS
FIGURE 1. TYPICAL CDP1802 MICROPROCESSOR SYSTEM
6-48
I/O
CONTROL
CDP1826C
Absolute Maximum Ratings
Thermal Information
DC Supply Voltage Range, (VDD)
(All Voltages Referenced to VSS Terminal)
CDP1826C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7V
Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V
DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Power Dissipation Per Package (PD)
TA = -40oC to +60oC (Package Type E) . . . . . . . . . . . . . . 500mW
TA = +60oC to +85oC (Package Type E). . . . . . Derate Linearly at
12mW/oC to 200mW
TA = -55oC to +100oC (Package Type D) . . . . . . . . . . . . . 500mW
TA = +100oC to +125oC (Package Type D). . . . Derate Linearly at
12mW/oC to 200mW
Thermal Resistance (Typical)
θJA (oC/W) θJC (oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . .
75
N/A
Device Dissipation Per Output Transistor
TA = Full Package Temperature Range
(All Package Types) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Operating Temperature Range (TA)
Package Type D. . . . . . . . . . . . . . . . . . . . . . . . . .-55oC to +125oC
Package Type E . . . . . . . . . . . . . . . . . . . . . . . . . . .-40oC to +85oC
Storage Temperature Range (TSTG). . . . . . . . . . . .-65oC to +150oC
Lead Temperature (During Soldering)
At distance 1/16 ±1/32 In. (1.59 ±0.79mm)
from case for 10s max . . . . . . . . . . . . . . . . . . . . . . . . . . . . +265oC
Recommended Operating Conditions
At TA = Full Package Temperature Range. For maximum reliability, operating conditions
should be selected so that operation is always within the following ranges:
CDP1826C
PARAMETER
SYMBOL
MIN
MAX
UNITS
4
6.5
V
VSS
VDD
V
-
10
µs
DC Operating Voltage Range
Input Voltage Range
Input Signal Rise or Fall Time, VDD = 5V
Static Electrical Specifications
tR, tF
At TA = -40oC to +85oC, VDD = 5V ±5%, Except as Noted:
CONDITIONS
LIMITS
CDP1826C
PARAMETER
Quiescent Device Current
Output Low (Sink) Current
BUS
SYMBOL
VO
(V)
VIN
(V)
MIN
(NOTE 1)
TYP
MAX
UNITS
IDD
-
0, VDD
-
5
50
µA
IOL
0.4
0, VDD
1.6
3.2
-
mA
0.4
0, VDD
0.8
1.6
-
mA
VDD -0.4
0, VDD
-1.0
-1.5
-
mA
VDD -0.4
0, VDD
-0.6
-1.0
-
mA
CEO
Output High (Source) Current
BUS
IOH
CEO
Output Voltage Low-Level
VOL
-
0, VDD
-
0
0.1
V
Output Voltage High-Level
VOH
-
0, VDD
VDD -0.1
VDD
-
V
Input Low Voltage
VIL
-
-
-
-
1.5
V
Input High Voltage
VIH
-
-
3.5
-
-
V
Input Leakage Current
IIN
Any Input
0, VDD
-
±0.1
±1
µA
IOPER
-
0, VDD
-
5
10
mA
Three-State Output Leakage Current
IOUT
0, VDD
0, VDD
-
±0.1
±1
µA
Input Capacitance
CIN
-
-
-
5
7.5
pF
COUT
-
0, VDD
-
10
15
pF
Operating Device Current (Note 2)
Output Capacitance
NOTES:
1. Typical values are for TA = +25oC and nominal VDD.
2. Outputs open circuited; Cycle time = 1µs.
6-49
CDP1826C
Signal Descriptions
A0 - A4, CS/A5 (Address Inputs): These inputs must be
stable prior to a write operation, but may change asynchronously during Read operations.
In an 1800 system, the multiplexed high-order address bit at
pin CS/A5 can be latched at the end of TPA. A high level will
provide a valid chip select for the CDP1826C. The low-order
address bit which appears after TPA is used for data word
selection. In non-1800 systems, TPA can be tied high to disable the latch and allow the CS/A5 pin to function as a normal address input.
BUS 0 - BUS 7: 8-bit three-state common input/output data
bus.
TPA: High-order address strobe input. The high-order
address bit at input CS/A5 is latched on the high-to-low tran-
sition of the TPA input. Tie TPA high to disable the CS/A5
latch feature.
CS1, CS2 (Chip Selector): Either chip select (CS1 or CS2),
when not valid, powers down the chip, disables READ and
WRITE functions, and gates off the address and output buffers.
MRD, MWR: Read and Write control signals. MWR overrides MRD, allowing the CDP1826C to be controlled from a
single R/W line.
CEO (Chip Enable Output): Allows daisy chaining to additional memories. CEO is high whenever the CDP1826C is
selected. CEO is only active (low) for a Read cycle with the
CDP1826C deselected and the MRD input low.
VDD, VSS: Power supply connections.
BUS 0
A0
BUS 1
A1
INPUT
ADDRESS
BUFFERS
A2
A3
64 x 8
MATRIX
XY
DECODE
A4
INPUT/OUTPUT
DATA
BUFFERS
AND
CONTROL
BUS 2
BUS 3
BUS 4
BUS 5
BUS 6
CS/A5
BUS 7
D
TPA
C
Q
CS1
CS2
MWR
CEO
MRD
FIGURE 2. FUNCTIONAL DIAGRAM
6-50
CDP1826C
1800 CLOCK
A5
TPA
MRD
CEO
BUS
VALID DATA
VALID DATA
RAM CYCLE
(RAM SELECTED)
ROM CYCLE
(RAM DESELECTED)
CS1 = 1, CS2 = 0
OPERATING MODES
CDP1800 Mode
Non-CDP1800 Mode
(NOTE 1)
CS/A5
CEO
I
I
I
I
I
I
I
I
I
I
I
I
Deselect
I
X
O
X
X
I
Deselect
O
X
O
X
X
O
Deselect
I
X
X
O
I
Deselect
O
X
X
O
O
FUNCTION
MRD
MWR
CS1 • CS2
Write
X
O
Read
O
Deselect
TPA
Write
X
O
I
I
X
I
Read
O
I
I
I
X
I
Deselect
I
I
I
I
X
I
Deselect
I
X
O
I
X
I
Deselect
O
X
O
I
X
O
NOTE:
1. For CDP1800 Mode, refers to high order memory address bit level at time when TPA
place.
transition takes
FIGURE 3. CHIP ENABLE OUTPUT TIMING WAVEFORMS FOR CDP1800 BASED SYSTEMS
6-51
CDP1826C
Dynamic Electrical Specifications At TA = -40 to +85oC, VDD = 5V ±5%, Input tR, tF = 10ns; CL = 50pF and 1 TTL Load
LIMITS
CDP1826C
PARAMETER
(NOTE 1)
MIN
(NOTE 2)
TYP
MAX
UNITS
READ - CYCLE TIMES (FIGURES 4 AND 5)
Address to TPA Setup
tASH
100
-
-
ns
Address to TPA Hold
tAH
100
-
-
ns
Access from Address Change
TAA
-
500
1000
ns
TPA Pulse Width
tPAW
200
-
-
ns
Output Valid from MRD
tAM
-
500
1000
ns
Access from Chip Select
tAC
-
500
1000
ns
tCA
-
150
300
ns
MRD to CEO Delay
tMC
75
-
-
ns
Output High Z from Invalid MRD
tRHZ
-
-
125
ns
Output High Z from Chip Deselect
tSHZ
-
-
225
ns
CEO Delay from TPA
Edge
NOTES:
1. Time required by a limit device to allow tor the indicated function.
2. Typical values are or TA = 25oC and nominal VDD.
A0 - A5
HIGH ORDER
ADDRESS BYTE
tASH
LOW ORDER ADDRESS BYTE
tAA
tAH
TPA
tPAW
MRD
tAC
CS1 - CS2
tRHZ
VALID CHIP SELECT
tCA
tSHZ
CEO
tMC
BUS
VALID DATA
HIGH IMPEDANCE
tAM
FIGURE 4. TIMING WAVEFORMS FOR READ CYCLE 1
6-52
CDP1826C
HIGH ORDER
ADDRESS BYTE
A0 - A5
LOW ORDER ADDRESS BYTE
tAA
MRD
tAC
CS1 • CS2
tRHZ
VALID CHIP SELECT
tSHZ
HIGH IMPEDANCE
BUS
VALID DATA
tAM
FIGURE 5. TIMING WAVEFORMS FOR READ-CYCLE 2 (TPA HIGH)
Dynamic Electrical Specifications At TA = -40 to +85oC, VDD = 5V ± 5%,Input tR, tF = 10ns; CL = 50pF and 1 TTL Load
LIMITS
CDP1826C
PARAMETER
(NOTE 1)
MIN
(NOTE 2)
TYP
MAX
UNITS
WRITE - CYCLE TIMES (FIGURES 6 AND 7)
Address to TPA Setup, High Byte
tASH
100
-
-
ns
Address to TPA Hold
tAH
100
-
-
ns
Address Setup, Low Byte
TASL
500
250
-
ns
TPA Pulse Width
tPAW
200
-
-
ns
Chip Select Setup
tCS
700
350
-
ns
Write Pulse Width
tWW
300
200
-
ns
Write Recovery
tWR
100
-
-
ns
Data Setup
tDS
400
200
-
ns
Data Hold from End of MWR
tDH1
100
50
-
ns
Data Hold from End of Chip Select
tDH2
125
50
-
ns
NOTES:
1. Time required by a limit device to allow tor the indicated function.
2. Typical values are for TA = 25oC and nominal VDD.
6-53
CDP1826C
A0 - A5
HIGH ORDER
ADDRESS BYTE
tASH
LOW ORDER ADDRESS BYTE
tAH
tWR
tASL
TPA
tPAW
tWW
MWR
tCS
CS1 • CS2
VALID CHIP SELECT
tDS
BUS
tDH1, tDH2
DATA IN STABLE
FIGURE 6. TIMING WAVEFORMS FOR WRITE-CYCLE 1
A0 - A5
HIGH ORDER
ADDRESS BYTE
LOW ORDER ADDRESS BYTE
tASL
tWR
tWW
MWR
tCS
CS1 • CS2
VALID CHIP SELECT
tDS
BUS
DATA IN STABLE
FIGURE 7. TIMING WAVEFORMS FOR WRITE-CYCLE 2 (TPA = HIGH)
6-54
tDH1, tDH2
CDP1826C
Data Retention Specifications
At TA = -40 to +85oC, see Figure 8
LIMITS
TEST
CONDITIONS
PARAMETER
Minimum Data Retention
Voltage
VDR
Data Retention Quiescent
Current
tDD
Chip Deselect to Data
Retention Time
tCDR
Recovery to Normal
Operation Time
tRC
VDD to VDR Rise and
Fall Time
tR, tF
CDP1826C
VDR
(V)
VDD
(V)
MIN
(NOTE 1)
TYP
MAX
UNITS
-
-
-
2
2.5
V
2.5
-
-
5
25
µA
-
5
600
-
-
ns
-
5
600
-
-
ns
2.5
5
1
-
-
µA
NOTE:
1. Typical values are or TA = 25oC and nominal VDD.
DATA RETENTION
MODE
VDD
0.95 VDD
0.95 VDD
VDR
tCDR
tF
tR
tRC
CS1
VIH
VIH
VIL
VIL
FIGURE 8. LOW VDD DATA RETENTION TIMING WAVEFORMS
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