Siemens HYB3118160BSJ-60 1m x 16-bit dynamic ram 1k & 4k -refresh Datasheet

HYB3116160BSJ/BST(L)-50/-60/-70
HYB3118160BSJ/BST(L)-50/-60/-70
1M x 16-Bit Dynamic RAM
(1k & 4k -Refresh)
Advanced Information
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1 048 576 words by 16-bit organization
0 to 70 °C operating temperature
Performance:
-50
-60
-70
tRAC
RAS access time
50
60
70
ns
tCAC
CAS access time
13
15
20
ns
tAA
Access time from address
25
30
35
ns
tRC
Read/Write cycle time
90
110
130
ns
tPC
Fast page mode cycle time
35
40
45
ns
Single + 3.3 V (± 0.3 V) supply
Low power dissipation
max. 720 active mW ( HYB3118160BSJ/BST-50)
max. 648 active mW ( HYB3118160BSJ/BST-60)
max. 576 active mW ( HYB3118160BSJ/BST-70)
max. 360 active mW ( HYB3116160BSJ/BST-50)
max. 324 active mW ( HYB3116160BSJ/BST-60)
max. 288 active mW ( HYB3116160BSJ/BST-70)
7.2 mW standby (LV-TTL)
3.6 mW standby (LV-CMOS)
720 µW standby for L-version
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh
Fast page mode capability
2 CAS / 1 WE
All inputs, outputs and clocks fully LV-TTL-compatible
1024 refresh cycles / 16 ms for HYB 3118160BSJ
4096 refresh cycles / 64 ms for HYB 3116160BSJ
Plastic Package:
P-SOJ-42-1 400 mil
P-TSOPII-50/44-1 400mil
Semiconductor Group
1
1.96
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
The HYB 3116(8)160BSJ/BST is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits.
The HYB 3116(8)160BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well
as advanced circuit techniques to provide wide operating margins, both internally and for the system
user. Multiplexed address inputs permit the HYB 3116(8)160BSJ/BST to be packaged in standard
SOJ-42 and TSOPII-50/44 plastic package with 400mil width. These packages provide high system
bit densities and are compatible with commonly used automatic testing and insertion equipment.
System-oriented features include single + 3.3 V (± 0.3 V) power supply, direct interfacing with highperformance logic device families.The HYB3116160BSTL parts have a very low power „sleep
mode“ suppported by Self Refresh.
Ordering Information
Type
Ordering Code
Package
Descriptions
HYB 3116160BSJ-50
on request
P-SOJ-42 400 mil
DRAM (access time 50 ns)
HYB 3116160BSJ-60
on request
P-SOJ-42 400 mil
DRAM (access time 60 ns)
HYB 3116160BSJ-70
on request
P-SOJ-42 400 mil
DRAM (access time 70 ns)
HYB 3118160BSJ-50
on request
P-SOJ-42 400 mil
DRAM (access time 50 ns)
HYB 3118160BSJ-60
on request
P-SOJ-42 400 mil
DRAM (access time 60 ns)
HYB 3118160BSJ-70
on request
P-SOJ-42 400 mil
DRAM (access time 70 ns)
HYB 3116160BST-50
on request
P-TSOPII-50/44 400 mil
DRAM (access time 50 ns)
HYB 3116160BST-60
on request
P-TSOPII-50/44 400 mil
DRAM (access time 60 ns)
HYB 3116160BST-70
on request
P-TSOPII-50/44 400 mil
DRAM (access time 70 ns)
HYB 3118160BST-50
on request
P-TSOPII-50/44 400 mil
DRAM (access time 50 ns)
HYB 3118160BST-60
on request
P-TSOPII-50/44 400 mil
DRAM (access time 60 ns)
HYB 3118160BST-70
on request
P-TSOPII-50/44 400 mil
DRAM (access time 70 ns)
Pin Names
A0 to A9
Row Address Inputs for 1k-refresh version HYB3118160BSJ/BST
A0 to A9
Column Addess Inputs for 1k-refresh version HYB3118160BSJ/BST
A0 to A11
Row Address Inputs for 4k-refresh version HYB3116160BSJ/BST
A0 to A7
Column Address Inputs for 4k-refresh version HYB3116160BSJ/BST
RAS
Row Address Strobe
OE
Output Enable
I/O1-I/O16
Data Input/Output
UCAS
Upper Column Address Strobe
LCAS
Lower Column Address Strobe
WE
Read/Write Input
VCC
Power Supply (+ 3.3 V)
VSS
Ground (0 V)
N.C.
not connected
Semiconductor Group
2
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
P-SOJ-42 (400 mil)
Vcc
I/O1
I/O2
I/O3
I/O4
Vcc
I/O5
I/O6
I/O7
I/O8
N.C.
N.C.
WE
RAS
A11/NC
A10/NC
A0
A1
A2
A3
Vcc
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
P-TSOPII-50/44 (400mil)
Vcc
Vss
I/O1
I/O16
I/O2
I/O3
I/O15
I/O4
I/O14
Vcc
I/O13
I/O5
Vss
I/O6
I/O12
I/O7
I/O11
I/O8
I/O10
N.C.
I/O9
N.C.
LCAS
N.C.
UCAS
N.C.
OE
WE
A9
RAS
A11/N.C.
A8
A10.N.C.
A7
A0
A6
A1
A5
A2
A4
A3
Vss
Vcc
1
2
3
4
5
6
7
8
9
10
11
50
49
48
47
46
45
44
43
42
41
40
Vss
I/O16
I/O15
I/O14
I/O13
Vss
I/O12
I/O11
I/O10
I/O9
N.C.
15
16
17
18
19
20
21
22
23
24
25
36
35
34
33
32
31
30
29
28
27
26
N.C.
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
Vss
*) A11 and A10 are not connected for HYB3118160BSJ/BST (1k-refresh version)
Truth Table
RAS
LCAS
UCAS
WE
OE
I/O1-I/O8
I/O9-I/O16
Operation
H
H
H
H
H
High-Z
High-Z
Standby
L
H
H
H
H
High-Z
High-Z
Refresh
L
L
H
H
L
Dout
High-Z
Lower byte read
L
H
L
H
L
High-Z
Dout
Upper byte read
L
L
L
H
L
Dout
Dout
Word read
L
L
H
L
H
Din
Don't care
Lower byte write
L
H
L
L
H
Don't care
Din
Upper byte write
L
L
L
L
H
Din
Din
Word write
L
L
L
H
H
High-Z
High-Z
NOP
Semiconductor Group
3
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
I/O1 I/O2
I/O16
WE
UCAS
LCAS
&
.
.
Data in
Buffer
No. 2 Clock
Generator
16
Column
Address
Buffer(8)
8
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
8
Data out
Buffer
16
Column
Decoder
Refresh
Controller
Sense Amplifier
I/O Gating
Refresh
Counter (12)
256
x16
12
Row
12
RAS
Address
Buffers(12)
12
Row
Decoder 4096
No. 1 Clock
Generator
Block Diagram for HYB 3116160BSJ
Semiconductor Group
OE
4
Memory Array
4096x256x16
16
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
I/O1 I/O2
I/O16
WE
UCAS
LCAS
.
.
&
Data in
Buffer
No. 2 Clock
Generator
10
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
16
Column
Address
Buffer(10)
10
Data out
Buffer
16
Column
Decoder
Refresh
Controller
Sense Amplifier
I/O Gating
Refresh
Counter (10)
1024
x16
10
Row
10
RAS
Address
Buffers(10)
Row
Decoder 1024
10
No. 1 Clock
Generator
Block Diagram for HYB 3118160BSJ
Semiconductor Group
OE
5
Memory Array
1024x1024x16
16
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 ° C
Soldering time.............................................................................................................................10 s
Input/output voltage ................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage..................................................................................................-0.5 V to 4.6 V
Power dissipation..................................................................................................................... 1.0 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics (values in brackets for HYB3116160BSJ)
TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V, tT = 5 ns
Parameter
Symbol
Limit Values
min.
max.
Unit Test
Condition
Input high voltage
VIH
2.0
Vcc+0.5
V
1)
Input low voltage
VIL
– 0.5
0.8
V
1)
TTL Output high voltage (IOUT = – 2 mA)
VOH
2.4
–
V
1)
TTL Output low voltage (IOUT = 2 mA)
VOL
–
0.4
V
1)
CMOS Output high voltage (IOUT = – 100 µA)
VOH
Vcc-0.2
–
V
1)
CMOS Output low voltage (IOUT = 100 µA)
VOL
–
0.2
V
1)
Input leakage current,any input
(0 V ≤ VIH ≤ Vcc + 0.3V, all other pins = 0 V)
II(L)
– 10
10
µA
1)
Output leakage current
(DO is disabled, 0 V ≤ VOUT ≤ Vcc + 0.3V)
IO(L)
– 10
10
µA
1)
Average VCC supply current:
ICC1
–
–
–
200(100) mA
180 (90) mA
160 (80) mA
2) 3) 4)
–
2
–
-50 ns version
-60 ns version
-70 ns version
2) 3) 4)
2) 3) 4)
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current (RAS = CAS = VIH) ICC2
Semiconductor Group
6
mA
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
DC Characteristics (values in brackets for HYB3116160BSJ) (cont’d)
TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V, tT = 5 ns
Parameter
Average VCC supply current, during RAS-only
refresh cycles:
-50 ns version
-60 ns version
-70 ns version
Symbol
Limit Values
Unit Test
Condition
min.
max.
–
–
–
200(100) mA
180 (90) mA
160 (80) mA
–
–
–
55 (40)
50 (35)
45 (30)
mA
mA
mA
2) 3) 4)
ICC3
2) 4)
2) 4)
2) 4)
(RAS cycling: CAS = VIH, tRC = tRC min.)
Average VCC supply current,
during fast page mode:
-50 ns version
-60 ns version
-70 ns version
ICC4
2) 3) 4)
2) 3) 4)
(RAS = VIL, CAS, address cycling, tPC = tPC min.)
Standby VCC supply current
(RAS = CAS = VCC – 0.2 V)
ICC5
–
1
mA
1)
Standby VCC supply current (L-version)
(RAS = CAS = VCC – 0.2 V)
ICC5
–
200
µA
1)
Average VCC supply current, during CASbefore-RAS refresh mode: -50 ns version
-60 ns version
-70 ns version
ICC6
–
–
–
200(100) mA
180 (90) mA
160 (80) mA
_
1
250
2) 4)
2) 4)
2) 4)
(RAS, CAS cycling, tRC = tRC min.)
Average Self Refresh Current
ICC7
(CBR cycle with tRAS>TRASSmin., CAS held low,
WE=Vcc-0.2V, Address and Din=Vcc--0.2V or 0.2V)
mA
µA
L-version
Capacitance
TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Limit Values
min.
max.
Unit
Input capacitance (A0 to A11)
CI1
–
5
pF
Input capacitance (RAS, UCAS, LCAS, WE, OE)
CI2
–
7
pF
I/O capacitance (I/O1-I/O16)
CIO
–
7
pF
Semiconductor Group
7
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
AC Characteristics 5)6)
TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, tT = 5 ns
Parameter
16F
Limit Values
Symbol
-50
Unit Note
-60
-70
min.
max. min.
max. min.
max.
common parameters
Random read or write cycle time
tRC
90
–
110
–
130
–
ns
RAS precharge time
tRP
30
–
40
–
50
–
ns
RAS pulse width
tRAS
50
10k
60
10k
70
10k
ns
CAS pulse width
tCAS
13
10k
15
10k
20
10k
ns
Row address setup time
tASR
0
–
0
–
0
–
ns
Row address hold time
tRAH
8
–
10
–
10
–
ns
Column address setup time
tASC
0
–
0
–
0
–
ns
Column address hold time
tCAH
10
–
15
–
15
–
ns
RAS to CAS delay time
tRCD
18
37
20
45
20
50
RAS to column address delay
time
tRAD
13
25
15
30
15
35
ns
RAS hold time
tRSH
13
15
–
20
–
ns
CAS hold time
tCSH
50
60
–
70
–
ns
CAS to RAS precharge time
tCRP
5
–
5
–
5
–
ns
Transition time (rise and fall)
tT
3
50
3
50
3
50
ns
Refresh period for HYB3118160
tREF
–
16
–
16
–
16
ms
Refresh period for HYB3116160
tREF
–
64
–
64
–
64
ms
Refresh period for L-versions
tREF
–
256
–
256
–
256
ms
Access time from RAS
tRAC
–
50
–
60
–
70
ns
8, 9
Access time from CAS
tCAC
–
13
–
15
–
20
ns
8, 9
Access time from column address tAA
–
25
–
30
–
35
ns
8,10
OE access time
–
13
–
15
–
20
ns
Column address to RAS lead time tRAL
25
–
30
–
35
–
ns
Read command setup time
tRCS
0
–
0
–
0
–
ns
Read command hold time
tRCH
0
–
0
–
0
–
ns
11
Read command hold time
referenced to RAS
tRRH
0
–
0
–
0
–
ns
11
7
Read Cycle
Semiconductor Group
tOEA
8
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
AC Characteristics (cont’d) 5)6)
TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, tT = 5 ns
Parameter
16F
Limit Values
Symbol
-50
Unit Note
-60
-70
min.
max. min.
max. min.
max.
CAS to output in low-Z
tCLZ
0
–
0
–
0
–
ns
8
Output buffer turn-off delay
tOFF
0
13
0
15
0
20
ns
12
Output buffer turn-off delay from
OE
tOEZ
0
13
0
15
0
20
ns
12
Data to OE low delay
tDZO
0
–
0
–
0
–
ns
13
CAS high to data delay
tCDD
13
–
15
–
20
–
ns
14
OE high to data delay
tODD
13
–
15
–
20
–
ns
14
Write command hold time
tWCH
8
–
10
–
10
–
ns
Write command pulse width
tWP
8
–
10
–
10
–
ns
Write command setup time
tWCS
0
–
0
–
0
–
ns
Write command to RAS lead time tRWL
13
–
15
–
20
–
ns
Write command to CAS lead time tCWL
13
–
15
–
20
–
ns
Data setup time
tDS
0
–
0
–
0
–
ns
16
Data hold time
tDH
10
–
10
–
15
–
ns
16
Data to CAS low delay
tDZC
0
–
0
–
0
–
ns
13
Read-write cycle time
tRWC
126
–
150
–
180
–
ns
RAS to WE delay time
tRWD
68
–
80
–
95
–
ns
15
CAS to WE delay time
tCWD
31
–
35
–
45
–
ns
15
Column address to WE delay time tAWD
43
–
50
–
60
–
ns
15
OE command hold time
tOEH
13
–
15
–
20
–
ns
Fast page mode cycle time
tPC
35
–
40
–
45
–
ns
CAS precharge time
tCP
10
–
10
–
10
–
ns
Access time from CAS precharge
tCPA
–
30
–
35
–
40
ns
RAS pulse width
tRAS
50
200k 60
Write Cycle
15
Read-Modify-Write Cycle
Fast Page Mode Cycle
Semiconductor Group
9
200k 70
200k ns
7
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
AC Characteristics (cont’d) 5)6)
TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, tT = 5 ns
Parameter
16F
Limit Values
Symbol
-50
CAS precharge to RAS Delay
tRHPC
Unit Note
-60
-70
min.
max. min.
max. min.
max.
30
–
35
–
40
–
ns
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle
time
tPRWC
71
–
80
–
95
–
ns
CAS precharge to WE
tCPWD
48
–
55
–
65
–
ns
CAS setup time
tCSR
10
–
10
–
10
–
ns
CAS hold time
tCHR
10
–
10
–
10
–
ns
RAS to CAS precharge time
tRPC
5
–
5
–
5
–
ns
Write to RAS precharge time
tWRP
10
–
10
–
10
–
ns
Write hold time referenced to RAS tWRH
10
–
10
–
10
–
ns
tCPT
35
–
40
–
40
–
ns
RAS pulse width
tRASS
100k _
100k _
100k _
ns
17
RAS precharge time
tRPS
95
_
110
_
130
_
ns
17
CAS hold time
tCHS
-50
_
-50
_
-50
_
ns
17
CAS-before-RAS Refresh Cycle
CAS-before-RAS Counter Test Cycle
CAS precharge time
Self Refresh Cycle
Semiconductor Group
10
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
Notes:
1) All voltages are referenced to VSS.
2) ICC1, ICC3, ICC4 and ICC6 depend on cycle rate.
3) ICC1 and ICC4 depend on output loading. Specified values are measured with the output open.
4) Address can be changed once or less while RAS = VIL. In the case of ICC4 it can be changed once or less
during a fast page mode cycle (tPC).
5) An initial pause of 200 µs is required after power-up followed by 8 RAS cycles of which at least one cycle has
to be a refresh cycle, before proper device operation is achieved. In case of using internal refresh counter, a
minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required.
6) AC measurements assume tT = 5 ns.
7) VIH (min.) and VIL (max.) are reference levels for measuring timing of input signals. Transition times are also
measured between VIH and VIL.
8) Measured with a load equivalent to 100 pF and at Voh=2.0 V (Ioh = -2mA) , Vol=0.8V (Iol=2mA).
9) Operation within the tRCD (max.) limit ensures that tRAC (max.) can be met. tRCD (max.) is specified as a
reference point only: If tRCD is greater than the specified tRCD (max.) limit, then access time is controlled by
tCAC.
10)Operation within the tRAD (max.) limit ensures that tRAC (max.) can be met. tRAD (max.) is specified as a
reference point only: If tRAD is greater than the specified tRAD (max.) limit, then access time is controlled by
tAA.
11)Either tRCH or tRRH must be satisfied for a read cycle.
12)tOFF (max.) and tOEZ (max.) define the time at which the outputs achieve the open-circuit condition and are
not referenced to output voltage levels.
13)Either tDZC or tDZO must be satisfied.
14)Either tCDD or tODD must be satisfied.
15)tWCS, tRWD, tCWD, tAWD and tCPWD are not restrictive operating parameters. They are included in the data
sheet as electrical characteristics only. If tWCS > tWCS (min.), the cycle is an early write cycle and the I/O pin
will remain open-circuit (high impedance) through the entire cycle; if tRWD > tRWD (min.), tCWD > tCWD
(min.), tAWD > tAWD (min.) and tCPWD > tCPWD (min.) , the cycle is a read-write cycle and I/O pins will
contain data read from the selected cells. If neither of the above sets of conditions is satisfied, the condition of
the I/O pins (at access time) is indeterminate.
16)These parameters are referenced to the CAS leading edge in early write cycles and to the WE leading edge
in read-write cycles.
17)When using Self Refresh mode, the following refresh operations must be performed to ensure proper DRAM
operation:
If row addresses are being refreshed on an evenly distributed manner over the refresh interval using CBR
refresh cycles, then only one CBR cycle must be performed immediately after exit from Self Refresh.
If row addresses are being refreshed in any other manner (ROR - Distributed/Burst; or CBR-Burst) over the
refresh interval, then a full set of row refreshes must be performed immediately before entry to and immediately
after exit from Self Refresh.
Semiconductor Group
11
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
tRC
tRAS
tRP
V
IH
RAS
VIL
tCSH
V
IH
UCAS
LCAS
VIL
tRAD
tASR
Address
AAAAAAAA
AAAA
IH AAAA
AAAAAAAA
VIL
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAAAAAA
AAAAAAA
AAAAAAA
AAA
AAAA
AAAAAAA
AAAAAAA
Row
tRAH
tRAL
tCAH
tASC
V
tCRP
tRSH
tCAS
tRCD
tASR
AAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAA
tRCH
Column
tRCS
tRRH
V
WE
AAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAA
AAAA
AAAA
IH AAAA
AAAAAAAA
AAAAAAAA
AA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAAAA
V AAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAA
AAAAAA
tAA
IL
OE
tOEA
V AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAA
IHAAAA
AAAAAAAA
AAAAAAAAAAAA
AAAAAAAAAAAAAAAA
AAAA
AAAAAAAAAAAAAAAA
AAAAAAAA
AA
AAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAA
AAAAAAAAAAAAAAAAAA
VIL AAAA
AAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
tCDD
tDZC
I/O
(Inputs)
tODD
tDZO
V
AAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAA
AAAA
IH AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAA
VIL
tCAC
tCLZ
V
OH
I/O
(Outputs) V
Row
Hi Z
OL
tOFF
AAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
A
AAAA
A
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAA
tOEZ
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AA
AAAA
AAAAAA
AAAAAA
Valid Data Out
Hi Z
tRAC
AAAA
AAAAAAA
AAA
AAAA
AAA
AAAAAAA
AAAAAAA
AAAA
AAAAAAA
AAA
WL1
“H” or “L”
Read Cycle
Semiconductor Group
12
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
tRC
tRAS
tRP
V
IH
RAS
VIL
tCSH
tRCD
tRSH
tCAS
V
IH
UCAS
LCAS
VIL
tRAD
tASR
V
Address
AAAAAAA
AAAA
AAA
AAAA
AAAAAAA
AAA
IH AAAA
AAAAAAA
AAA
VIL
tRAL
AAA
AAAA
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAAAAAA
AAA
tRAH
V
WE
tASR
AAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAA
AAA
AAAAAAA
Column
AAAAAAAAAAAAAAAAAAAAAAAAAA
AA
AAAA
AAAA
AAAAAAAA
AAAA
AA
AAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
.
Row
tCWL
tWCS
AAAAAAAAAAAAAAAAAAAAAA
IH AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAA
VIL
tCAH
tASC
Row
tCRP
t WP
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
A
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
A
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
A
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
A
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AAAAAAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
A
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
tWCH
tRWL
OE
V AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
IHAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
VIL AAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
tDS
I/O
(Inputs)
tDH
V
IH
Valid Data In
VIL
V
OH
I/O
(Outputs) V
Hi Z
OL
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAAAAAA
AAA
WL2
“H” or “L”
Write Cycle (Early Write)
Semiconductor Group
13
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
tRC
tRAS
tRP
V
IH
RAS
VIL
tCSH
tRCD
V
IH
UCAS
LCAS
VIL
tRAD
tASR
tCAH
tASC
V AAAAAAAAA
AAAAA
IHAAAA
AAAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA Row
Address V AAAA
AAAAAAAA
AAAAAAAAA
IL AAAAAAAAA
tRAL
Column
tASR
AAAA
AAAAAAAA
AAAA
AAAAAAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAA
tCWL
tRAH
V
WE
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
IH AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
VIL
tCRP
tRSH
tCAS
tRWL
tWP
AA
AAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
.
Row
AAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAA
AAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
tOEH
V
OE
IH AAAAAAAAAAAAAAAAAAAAAA
VIL
AAAAAAAAAA
AAAAAAAA
AAAA
AAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAA
tODD
tDS
tOEZ
tDZO
tDZC
I/O
(Inputs)
V
AAAAAAAAA
IH AAAA
AAAAAAAA
AAAAAAAAAAAAA
VIL
AAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
A
AAAA
AAAA
AAAA
AAAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAAAAAAAAAAA
tCLZ
tOEA
V
OH
I/O
(Outputs) V
Hi-Z
OL
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAA
A
AAAA
AAAAA
A
AAAA
A
AAAAA
AAAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
“H” or “L”
Valid Data
AAAAAAAA
AAAAAAAAAAA
AAAA
AAAAAAAA
AAAA
AAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
Hi-Z
WL3
Write Cycle (OE Controlled Write)
Semiconductor Group
AAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAA
tDH
14
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
tRWC
tRAS
tRP
V
IH
RAS
tCSH
VIL
tRSH
tCAS
tRCD
V
tCRP
IH
UCAS
LCAS
VIL
tRAH
tCAH
V
AA
IH AAA
AAA
AAAA
Address
AA
AAA
AAA
AAAA
VIL
Row
tASR
tASC
tASR
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AA
AAAA
AAAAAA
AAAAAAAA
AAAAAAAA
AAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
t
CWL
tAWD
Column
tRAD
tCWD
tRWL
tRWD
V
WE
Row
tWP
AAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
IH AAA
AAAA
AAA
AAAA
AAAAAAAA
AAAAAAA
AAAAAAAA
AAAAAAAA
AAA
AAAA
AAAA
AAAA
AAA
VIL AAAAAAAAAAAAAAAAAAA
AAAA
AA
AAAAAAAA
AAAAAAAA
AAAA
AA
AAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAA
AAAAAAAA
AAAAAAAA
AA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAA
tAA
tRCS
tOEH
tOEA
V
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
IH AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
OE
VIL
AAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
tDS
tDZO
tDZC
tDH
V
I/O
(Inputs)
AAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAA
IH AAAA
AAAAAAAAAAAAAAAAAAAAAAAAA
VIL
AAAAA
AAAAAAAA
AAAAAAAA
AAAA
A
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
A
AAAAA
AAAA
AAAA
AAAA
AAAAAAAA
A
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAA
AAAAA
AAAAAAAAAAAA
AAAAAAAA
AAAAAAAAA
AAAAAAAAAAAA
AAAA
AAAAAAAAAAAAA
AAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAA
AAA
AAAA
AAAAAAA
AAA
AAAA
AAAAAAA
AAA
AAAA
AAAAAAA
AAAAAAA
tCLZ
Valid
Data in
AAAAAAA
AAAAAAAA
AAAA
AAA
AAAAAAAA
AAAAAAAA
AAA
AAAA
AAAAAAAA
AAAA
AAAAAAA
AAAA
AAAAAAAA
AAAAAAA
AAAAAAAA
AAAA
AAA
AAAA
AAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAA
tODD
tCAC
tOEZ
V
OH
AAAA
AA
AAAA
AA
Data
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AA Out
I/O
(Outputs) VOL
tRAC
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAA
“H” or “L”
WL4
Read-Write (Read-Modify-Write) Cycle
Semiconductor Group
15
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
tRP
tRASP
V
IH
RAS
VIL
tRHCP
tRSH
tCAS
tPC
tCAS
tCP
tCAS
tRCD
V
tCRP
IH
UCAS
LCAS
VIL
tCSH
tRAH
tASR
V
Address
tCAH
tASC
tASC
AAAA
AA
IH AAAA
AAAA
AAAAAA
AAAA
AA Row AAAA
A
AAAA
AAAA
A
AAAAAAA
VIL AAAA
AAAAA
AAAA
tRAD
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
AA Column
AAAAAAAA
AAAAAAAAAA
AA
Column
tRCH
WE
AAAAAAAAAAAAAAA
AAAAAAA
AAAAAAAA
AAA
AAAAAAAA
AAAA
AAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAA
A
AAAA
AAAAA
A
AAAA
AAAAA
A
AAAA
AAAAA
AAAAA
AAAAAAAAAAA
IH AAAA
AAAAAAAAAAAAAAA
VIL
tAA
V
OE
AAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAA
AAAAAAAAAAA
IH AAAA
AAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAA
VIL
AAAAAAAA
AAAAAAA
AAAAAAAAAAAA
AAAAAAAA
AAAA
AAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAA
AAAAAAAAAAA
V
AAAAAAAAAAAAAAAA
IH AAAA
AAAAAAAAAAAAAAAAAAAA
VIL
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
tCAC
tRAC
tCLZ
V
OL
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAA
A
AAAA
AAAAA
A
AAAA
AAAAA
AAAAA
A
AAAA
tOFF
tOEZ
AAAAA
AAAAA
AAAAA
Valid
AAAAA
AAAAA
Data Out
AAAAA
AAAAA
OH
I/O
(Outputs) V
tODD
tCAC
tCLZ
AAAAAA
AAAAAA
AAAAAA
Valid
AAAAAA
AAAAAA
Data Out
AAAAAA
AAAAAA
AAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAA
AAAA
tCDD
tDZO
AAAAA
AA
AAA
AAAAA
AA
AAA
AAAAA
AAAAA
AA
AAA
tOFF
tOEZ
tDZC
AAAAAAA
AAAA
AAA
AAAAAAAA
AAAAAAA
AAAA
AAA
AAAAAAAA
AAAAAAA
AAAA
AAAAAAAAAAA
tRRHAAAAAAAAAAA
tODD
tCAC
tCLZ
AA
AAAAAAAA
AAAAAA
AAAA
AA
AAAAAAAA
AA
AAAA
AAAA
AA
AAAAAAAA
AA
AAAAAA
AAAAAAAA
AAAA
tOFF
tOEZ
AAAAAA
AAAAAA
AAAAAA
Valid
AAAAAA
AAAAAA
Data Out
AAAAAA
AAAAAA
“H” or “L”
FPM1
Fast Page Mode Read Cycle
Semiconductor Group
AAAAAAAAAAAAA
AAAA
AAAAAAAA
A
AAAAAAAA
AAAAAAAA
AAAA
AAAA
A
AAAAAAAA
AAAA
A
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAA
A
tDZO
tODD
Row
tRCH
tCPA
tAA
tOEA
tDZC
tDZC
tDZO
I/O
(Inputs)
A
AAAA
AAAAA
A
AAAA
AAAAA
A
AAAA
AAAAA
AAAAA
tCPA
tAA
AAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAAAAAAAAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAAAAA
AAA
AAAA
AAAAAAAA
AAA
AAAAAAAAAAA
tRCS
tOEA
tOEA
tASR
tASC
AAAA
AAAA
A
AAAA
AAAA
A
AAAA
AAAA
AAAAA
A Column
AAAA
AAAAAAAA
A
AAAAAAAAA
tRCS
tRCS
V
tCAH
tCAH
16
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
tRP
tRAS
V
IH
RAS
VIL
tRSH
tPC
tRCD
tCAS
tCP
tCAS
tCAS
tCRP
V
IH
CAS
VIL
tRAL
tRAH
tCAH
tASR
V
Address
AAAAA
AAAA
A
AAAA
A
AAAA
AAAAAA
IH AAAA
AAAAAA
VIL
Row
A
AAAA
AAAA
AA
AAAA
AAAA
A
AAAA
AAAAAA
tASC
tCWL
tWCS
AAAA
AAAAAAAA
AAAAA
A
tWP
AAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAAAAAAA
AAAA
AAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAA
tWCS
tWCH
AAAA
AAAAAAA
AAAA
AAAAAAAA
AAAAAAA
AAA
AAAA
AAAA
AAA
AAAA
AAAAAAAA
AAAAAAA
AAA
tWP
AAAA
AAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
AAAA
AAAA
AAAA
A
AAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
tCWL
tRWL
tWCH
tWP AAAA
AAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAA
AAA
AAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAAAAA
AAAAAAAA
AAAA
AAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
IH AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
VIL
tDH
V
AAA
AAAAAAA
AAAAAAAA
AAAAAAAA
IH AAAA
AAAAAAAAAAAAAAA
VIL
AAAAAAA
AAAAAAAA
AAA
AAAAAAAA
AAAA
AAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAA
Valid
Data In
tDH
tDH
tDS
tDS
I/O
(Inputs)
tASR
tCAH
AAAA
AAAAAAAA
AAAAAA
AA
tWCH
AAAAAAA
AAAAAAAA
AAAAAAAAAAA
AAAAAAAA
IH AAAA
AAAAAAAAAAAAAAAAAAA
V
OE
AAAA
AAAAAAAA
AAAAAA
AA
tCWL
V
VIL
tASC
AAAAAAAAAA
AAAAAAAAAA
AAAAAAAAA
AAAAAA Column AAAA
AAAAAA Column AAAA
AAAAA Column
Column AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AA
AAAAA
AAAA
AAAA
AAAA
AA
AA
A
AAAA
AAAA
AAAAAAAAAA
AAAAAAAAAA
AAAAAAAA
AAAAA
tRAD
tWCS
WE
tCAH
tASC
A
AAAAA
AAAAAAAA
AAAA
AAAAA
AAAA
A
AAAAAAAA
AAAAA
AAAA
A
AAAAAAAA
AAAAAAAAA
Valid
Data In
tDS
AAA
AAAAAAA
AAAAAAAA
AAAA
AAAAAAA
AAAA
AAA
AAAAAAAA
AAAAAAA
AAAA
AAA
AAAAAAAA
AAAAAAAAAAA
Valid
Data In
AAA
AAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAA
AAAAAAAA
AAAAAAAA
AAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAA
V
OH
I/O
(Outputs) V
HI-Z
OL
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAAAAAA
AAA
“H” or “L”
FPM2
Fast Page Mode Early Write Cycle
Semiconductor Group
17
18
Data
Out
tDS
tDH
tOEZ
tDS
tDH
Data
Out
tOEZ
AAAAAA
AA
AAAA
AAAA
AAAAAA
AA
tDS
Data
Out
“H” or “L”
tRAC
V
OH
I/O
(Outputs) V
AAA
AAAA
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAAAAAA
AAA
OL
tOEH
tODD
tOEZ tDH
AAAA
AA
AAAA
AAAAAA
AA
tCAC
I/O
(Inputs) V IL
IH
AAAA
AA
AAAA
AAAAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AA
AAAA
AA
V
AAAAAA
AAAAAA
AAAAAA
AAAAAA
tAA
tCLZ
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
tDZC
tCLZ
tDZO
V IL
IH
OE
V
tAA
tOEA
tAWD
V IL
V
IH
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AA
AAAA
AA
AA
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAA
AAAAAA
AA
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AA
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AA
AAAA
AA
tCAC
A
AAAA
AAAAA
AAAAA
Data In
tCPA
tDZC
tOEA
tAWD
tWP
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAAAA
AAAA
AAAAAA
tOEH
Data In
AA
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AAAAAA
AA
AAAA
AAAAAA
AAAAAA
tODD
tDZC
tCLZ
tCPA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AA
AAAAAA
AAAA
AAAAAA
AA
AAAAAA
AAAA
AAAAA
A
AAAA
A
tAA
Data In
tODD
tWP
tOEA
tWP
tCWL
tAWD
tCPWD
tCWD
tCPWD
tCWD
tCWL
tRWD
tCWD
Row
V IL
V
IH
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAAAA
Address
tASR
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AAAAAA
AA
AAAA
AA
AAAA
AAAAAA
AAAAAA
AA
AAAA
AA
AAAA
AAAAAA
AAAAAA
AA
AAAA
AAAAAA
AAAAAA
AA
AAAA
AAAAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AAAAAA
AA
AAAAA
A
AAAA
AAAAA
WE
tASC
Column
tCAH
tRAH
tRAD
V IL
IH
UCAS
LCAS
V
AA
AAAA
AAAAAA
AA
AAAA
AA
AAAA
AAAAAA
tRCS
tASC
Column
Address
tCAH
tCP
AA
AAAA
AA
AAAAAA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AA
AAAAAA
AAAA
AAAAAA
AAAAAA
AAAAAA
tCAS
tCSH
tRCD
V IL
IH
RAS
Column
tASC
tPRWC
tCAS
tRAS
V
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AAAAAA
tRWL
tCWL
Row
tASR
tRAL
tCAH
tCAS
tRSH
tCRP
tRP
AAAA
AAAAAA
AAAAAA
AA
AAAA
AAAAAA
AAAAAA
AAAAAA
AA
AAAA
AA
AAAA
AAAAAA
AA
AAAAAA
AAAA
AAAAAA
AAAAAA
AA
AAAA
AAAAAA
AAAAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AA
Fast Page Mode Read-Modify- Write Cycle
Semiconductor Group
AAAA
AAAAAA
AAAAAA
AA
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AAAAAA
AA
AAAA
AAAAAA
AAAAAA
AA
AAAA
AAAAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AAAAAA
AA
AAAA
AAAAAA
AAAAAA
AA
AAAA
AA
AAAA
AAAAAA
AAAAAA
AA
tOEH
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
tRC
tRAS
tRP
V
IH
RAS
VIL
tCRP
tRPC
V
CAS
AAAAA
AAAA
A
AAAAA
AAAAAAAA
AAAA
A
AAAA
AAAA
AAAA
AAAAA
A
AAAA
AAAA
AAAAAAAAA
IH
VIL
tRAH
tASR
tASR
V
Address
AAAA
IH AAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAAAAAA
VIL
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAAAAAA
Row
A
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
A
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
V
OH
I/O
(Outputs) V
HI-Z
OL
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
“H” or “L”
WL9
RAS-Only Refresh Cycle
Semiconductor Group
19
Row
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
tRC
tRP
V
RAS
tRAS
IH
VIL
tRPC
tCSR
tCRP
tCP
tRPC
tCHR
V
UCAS
LCAS
tRP
AAAAAA
AAAAAA
AAAAAA
AAAAAA
AA
AAAA
AAAAAA
AAAAAA
IH
VIL
tWRP
tWRH
V
WE
AAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAA
AAAAAAAAAAAA
IH AAAA
AAAAAAAAAAAAAAAA
VIL
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAA
AAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
tOEZ
V
AA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAA
AA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
IH
OE
VIL
tCDD
V
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
IH
I/O
(Inputs) V
IL
tODD
V
OH
I/O
(Outputs)VOL
HI-Z
tOFF
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
“H” or “L”
WL10
CAS-Before-RAS Refresh Cycle
Semiconductor Group
20
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
tRC
tRC
RAS
tRP
tRAS
V
tRP
tRAS
IH
VIL
tRSH
tRCD
tCRP
tCHR
V
UCAS
LCAS
IH
tRAD
VIL
tWRP
tASC
tASR
Address
V AAAAAAA
IHAAAA
AAA
AAAAAAA
AAAAAAA
AAA
VIL AAAA
AAA
AAAA
AAAAAAA
tRAH
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
A
AAAA
AAAAA
AA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAA Column AAAA
AA
AAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
Row AAAA
AAAA
AAAA
AAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAA
AAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
Row
tRRH
tRCS
WE
tASR
tWRH
tCAH
V AAAAAAAAAAAAAAAA
AAAAAAAA
IHAAAA
AAAAAAAA
AAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
VIL AAAA
AAAAAAAAAAAA
AAAAAAAA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AA
AAAA
AAAAAA
AAAAAA
tAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
tOEA
OE
V AAAAAAAAAAAAAAAAAAAAAAAAAAAA
IHAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAA
AAAAAAAA
VIL AAAA
AAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAA
tDZC
tCDD
tDZO
V
I/O
(Inputs)
IH
VIL
AAAA
AAAAAAAAAAAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
tODD
tCAC
tOFF
tCLZ
tOEZ
tRAC
V
A
AAAAA
AAAA
A
AAAA
A
AAAA
AAAA
AAAAA
A
OH
I/O
(Outputs) V
OL
AAAA
AAA
AAAA
AAAAAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAAAAAA
AAA
Valid Data Out
“H” or “L”
HI-Z
WL11
Hidden Refresh Cycle (Read)
Semiconductor Group
AAAA
AAAAAAAAAAAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
A
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
21
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
tRC
tRC
tRP
tRAS
V
RAS
IH
tRAS
tRP
VIL
tRCD
tRSH
tCHR
tCRP
V
UCAS
LCAS
IH
VIL
tRAD
tRAH
tASC
tCAH
tASR
Address
V AAAAAAA
IHAAAAAAA
AAAA
AAAAAAA
AAA Row
VIL AAAA
AAAAAAA
AAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAA
AAAA
AA
AAAAAAAA
AA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAAAA
AAAAAA Column AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
tWCS
tWRP tWRH
tWCH
tWP
V
WE
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAA
AAA
IH AAAA
AAAAAAAAAAAAAAAAAAA
VIL
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAA
AAA
AAAAAAAA
AAAAAAAAAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAA
tDS
I/O
(Input)
tASR
V AAAAAAAAAAAAAAA
IHAAAA
AAAAAAAAAAA
AAAAAAAAAAAAAAA
AAAAAAAAAAAA
AAAAAAA
AAA
AAAAAAAAAAAA
AAA
AAAA
V AAAA
IL AAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAAAAAA
AAAA
AAAA
AAA
AAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAA
tDH
Valid Data
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
V
OH
I/O
(Output) V
OL
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
HI-Z
“H” or “L”
WL12
Hidden Refresh Cycle (Early Write)
Semiconductor Group
Row
22
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
tRP
tRASS
tRPS
V
RAS
IH
VIL
tRPC
tCP
V
CAS
A
AAAAAAAA
AAAAA
AAAA
AAAAA
AAAA
A
AAAA
AAAA
AAAA
AAAAA
A
AAAA
AAAAAAAA
AAAAA
IH
VIL
tCRP
tCHS
tCSR
tWRP
tWRH
V
WE
AAAAAAAAAAAAAAA
IH AAAA
AAAAAAAAAAAAAAAAAAA
VIL
AAA
AAAAAAAA
AAAA
AAAA
AAAAAAA
AAAAAAAA
AAAA
AAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAA
V
AAAA
AA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AA
AAAAAAAA
AAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
IH
OE
AAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
A
AAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
A
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
A
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
VIL
tCDD
V
AAAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAA
AAAAAAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAA
AAAA
IH
I/O
(Inputs) V
IL
tODD
tOEZ
V
OH
I/O
(Outputs) V
OL
HI-Z
tOFF
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
“H” or “L”
WL13
CAS before RAS Self Refresh Cycle
Semiconductor Group
23
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
tRP
tRAS
Read Cycle:
RAS
V
IH
V IL
tRSH
tCAS
tCP
tCHR
tCSR
CAS
V IH
V IL
Address
tRAL
V IHAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
tASC
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
V IL AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
WE
OE
I/O
(Inputs)
I/O
(Outputs)
AAAAAAAAAAAAA
AAAAAAAAAAAAA
V IL AAAAAAAAAAAAA
tWRH
tDZC
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
tODD
tDZO
tCLZ
VOH
VOL
AA
AAAAAA
AAAA
AAAAAA
AA
AAAA
AAAAAA
tWCS
tWRP
Write Cycle:
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
V IL AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
AAAAAAAAAAAAAAAAAAAA
V IL AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAA
tRCH
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAAAAAAAAAA
tOEA
tRCS
V IH AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
AAAAAAAAAAAAAAAAAAAAAAAA
V IHAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAA
AAAA
AAAAAAAA
A
AAAAAAAA
AAAAAAAA
AAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAA
Row
tRRH
tAA
tCAC
AAAAAA
AAAAAAAA
AAAA
AA
AAAAAA
AAAAAAAA
AAAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAA
tASR
AAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
Column
tWRP
AAAAAAAAA
V IHAAAA
AAAAAAAAAAAAA
tCAH
tRWL
tCWL
tOEZ
tCDD
AA
AAAA
AAAA
AAAA
AAAA
AAAAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAAAAAA
AAAAAAAA
AAAAAA
tOFF AAAA
Data Out
AAAAAAAA
AAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
WE
V IH AAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
V IL AAAA
AAAAAAAAAAAA
OE
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
V IH AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
V IL AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
I/O
(Inputs)
V IH AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAA
V IL AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
I/O
(Outputs)
V
IH
V IL
tWRH
tDS
HI-Z
CAS-Before-RAS Refresh Counter Test Cycle
Semiconductor Group
tWCH
24
tDH
Data In
AAAA
AAAAAAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAA
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
Package Outlines
0.81 max.
1.27
0.43
+
- 0.1
0.18
1)
10.3 -0.3
9.4
0.08
A 42x
+- 0.25
11.2
+
- 0.15
25.4
42
22
1
GPJ05853
21
1)
27.43
-0.25
A
Index marking
1) does not include plastic or metal protusion of 0.15 max per side
Plastic Package P-TSOPII-50/44 (400 mil)
(Thin Small Outline, SMD, 0.8 mm lead pitch)
Semiconductor Group
25
B
0.2 +0.12
-0.05
0.8 min.
2.08 min.
3.75 max.
Plastic Package P-SOJ-42 (400 mil)
(Small Outline J-lead, SMD)
0.18
B
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