Kexin BAV170 Low-leakage double diode Datasheet

Diodes
SMD Type
Low-leakage double diode
BAV170
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Plastic SMD package
0.4
3
Features
Switching time: typ. 0.8
1
s
0.55
Low leakage current: typ. 3 pA
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Continuous reverse voltage:max. 75 V
+0.05
0.1-0.01
+0.1
0.97-0.1
Repetitive peak reverse voltage:max. 85 V
0-0.1
+0.1
0.38-0.1
Repetitive peak forward current:max. 500 mA.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Conditions
Min
Max
Unit
VRRM
85
V
Continuous reverse voltage
VR
75
V
Continuous forward current
IF
Repetitive peak reverse voltage
Repetitive peak forward current
single diode loaded
215
double diode loaded
125
500
IFRM
square wave; Tj = 25
Non-repetitive peak forward current
IFSM
mA
prior to surge
s
4
t = 1 ms
1
t=1
mA
t=1s
0.5
Ta mb = 25
250
A
Total power dissipation
Ptot
Storage temperature
Tstg
Junction temperature
Tj
150
thermal resistance from junction to tie-point
Rth j-t p
360
K/W
thermal resistance from junction to ambient
Rth j-a
500
K/W
-65
mW
+150
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Diodes
SMD Type
BAV170
Electrical Characteristics Ta = 25
Parameter
Symbol
Forward voltage
Conditions
VF
Reverse current
900
IF = 10 mA
1000
IF = 50 mA
1100
IF = 150 mA
1250
VR = 75 V; Tj = 150
Diode capacitance
Cd
Reverse recovery time
trr
f = 1 MHz; VR = 0;
when switched from IF = 10 mA to IR = 10 mA;
RL = 100
Marking
Marking
2
JXp
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Max
IF = 1 mA
VR = 75 V
IR
Typ
;measured at IR = 1 mA;
0.003
5
3
80
2
0.8
Unit
mV
nA
pF
3
ìs
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