LSJ211 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J211 FEATURES DIRECT REPLACEMENT FOR SILICONIX J211 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) The LSJ211 is a n-channel JFET General Purpose amplifier with low noise and low leakage. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Derating over temperature MAXIMUM CURRENT Gate Current (Note 1) MAXIMUM VOLTAGES Gate to Drain Voltage or Gate to Source Voltage LSJ211 Benefits: High gain Low Leakage Low Noise LSJ211 Applications: General Purpose Amplifiers UHV / VHF Amplifiers Mixers Oscillators LSJ211 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN BVGSS Gate to Source Breakdown Voltage ‐25 VGS(off) Gate to Source Cutoff Voltage ‐2.5 IDSS Drain to Source Saturation Current (Note 2) 7 IGSS Gate Reverse Current (Note 3) ‐‐ IG Gate Operating Current (Note 3) ‐‐ rDS(on) Drain to Source On Resistance ‐‐ TYP. ‐‐ ‐‐ ‐‐ ‐‐ ‐10 ‐‐ MAX ‐‐ ‐4.5 20 ‐100 ‐‐ 50 UNITS V ‐55°C to +150°C ‐55°C to +135°C 360mW 3.27 mW/°C 10mA ‐25V CONDITIONS VDS = 0V, IG = ‐1µA VDS = 15V, ID = 1nA VDS = 15V, VGS = 0V VDS = 0V, VGS = ‐15V VDS = 10V, ID = 1mA IG = 1mA, VDS = 0V mA pA pA Ω Click To Buy LSJ211 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. gfs Forward Transconductance 6000 ‐‐ gos Output Conductance ‐‐ ‐‐ Ciss Input Capacitance ‐‐ 4 Crss Reverse Transfer Capacitance ‐‐ 1 en Equivalent Noise Voltage ‐‐ 10 MAX 12000 200 ‐‐ ‐‐ ‐‐ LSJ211 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS td(on) Turn On Time 2 tr Turn On Rise Time 2 td(off) Turn Off Time 6 tf Turn Off Fall Time 15 UNITS µmho CONDITIONS VDS = 15V, VGS = 0V , f = 1kHz pF VDS = 15V, VGS = 0V , f = 1MHz nV/√Hz VDS = 15V, VGS = 0V , f = 1kHz CONDITIONS VDD = 10V VGS(H) = 0V ns See Switching Circuit Note 1 ‐ Absolute maximum ratings are limiting values above which LSJ211 serviceability may be impaired. Note 2 ‐ Pulse test duration = 2ms Note 3 – Approximately doubles for every 10°C increase in TA Micross Components Europe Available Packages: TO-92 (Bottom View) LSJ211 in TO-92 LSJ211 in bare die. Tel: +44 1603 788967 Email: [email protected] Web: http://www.micross.com/distribution Please contact Micross for full package and die dimensions Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx