Fairchild FDC5661N N-channel logic level powertrenchâ® mosfet 60v, 4a, 60mî© Datasheet

FDC5661N_F085
®
N-Channel Logic Level PowerTrench MOSFET
tm
60V, 4A, 60mΩ
Features
Applications
„ RDS(on) = 47mΩ at VGS = 10V, ID = 4.3A
„ DC/DC converter
„ RDS(on) = 60mΩ at VGS = 4.5V, ID = 4A
„ Motor Drives
„ Typ Qg(TOT) = 14.5nC at VGS = 10V
„ Low Miller Charge
„ Qualified to AEC Q101
„ RoHS Compliant
©2008 Fairchild Semiconductor Corporation
FDC5661N_F085 Rev. A
1
www.fairchildsemi.com
FDC5661N_F085 N-Channel Logic Level PowerTrench® MOSFET
October 2008
Symbol
Drain to Source Voltage
VDSS
VGS
ID
PD
Parameter
Ratings
60
Units
V
Gate to Source Voltage
±20
V
Drain Current Continuous (VGS = 10V)
4.3
Pulsed
20
Power Dissipation
TJ, TSTG Operating and Storage Temperature
A
1.6
W
-55 to +150
oC
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-263,
1in2
copper pad area
30
o
78
oC/W
C/W
Package Marking and Ordering Information
Device Marking
.661N
Device
FDC5661N_F085
Package
SSOT-6
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
60
-
-
-
V
-
1
-
-
250
VGS = ±20V
-
-
±100
nA
VGS = VDS, ID = 250μA
1
2.0
3
V
ID = 4.3A, VGS= 10V
-
38
47
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
VDS = 48V,
VGS = 0V
TA = 150oC
μA
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
ID = 4A, VGS= 4.5V
-
46
60
ID = 4.3A, VGS= 10V
TJ = 150oC
-
69
86
VDS = 25V, VGS = 0V,
f = 1MHz
-
763
-
pF
-
68
-
pF
pF
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
36
-
RG
Gate Resistance
f = 1MHz
-
2.6
-
Ω
Qg(TOT)
Total Gate Charge at 10V
VGS = 0 to 10V
-
14.5
19
nC
Qgs
Gate to Source Gate Charge
-
2.4
-
nC
Qgd
Gate to Drain “Miller“ Charge
-
2.9
-
nC
FDC5661N_F085 Rev. A
2
VDD = 30V
ID = 4.3A
www.fairchildsemi.com
FDC5661N_F085 N-Channel Logic Level PowerTrench® MOSFET
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
ton
Turn-On Time
-
-
17.6
ns
td(on)
Turn-On Delay Time
-
7.2
-
ns
tr
Rise Time
-
1.6
-
ns
td(off)
Turn-Off Delay Time
-
19.3
-
ns
tf
Fall Time
-
3.1
-
ns
toff
Turn-Off Time
-
-
36
ns
ISD = 4.3A
-
0.8
1.25
ISD = 2.1A
-
0.8
1.0
VDD = 30V, ID = 4.3A
VGS = 10V, RGS = 6Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 4.3A, dISD/dt = 100A/μs
V
-
18.4
24
ns
-
10.0
13
nC
Notes:
1:
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDC5661N_F085 Rev. A
3
www.fairchildsemi.com
FDC5661N_F085 N-Channel Logic Level PowerTrench® MOSFET
Electrical Characteristics TA = 25oC unless otherwise noted
5
1.0
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
0.2
4
3
VGS = 10V
2
VGS = 4.5V
1
o
RθJA = 78 C/W
0.0
0
0
25
50
75
100
125
TA, AMBIENT TEMPERATURE(oC)
25
150
50
75
100
125
TA, AMBIENT TEMPERATURE(oC)
150
Figure 2. Maximum Continuous Drain Current vs
Ambient Temperature
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
DUTY CYCLE - DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 78 C/W
0.01
-3
-2
10
10
-1
0
1
2
10
10
10
t, RECTANGULAR PULSE DURATION(s)
3
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
100
VGS = 10V
TC = 25oC
IDM, PEAK CURRENT (A)
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
150 - TC
I = I25
125
10
SINGLE PULSE
o
RθJA = 78 C/W
1
-3
10
-2
10
-1
0
1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
2
10
3
10
Figure 4. Peak Current Capability
FDC5661N_F085 Rev. A
4
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FDC5661N_F085 N-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics
20
10us
10
100us
1
1ms
10ms
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.01
0.01
SINGLE PULSE
TJ = MAX RATED
o
TA = 25 C
100ms
1s
DC
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
16
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
VDD = 5V
12
TJ = 150oC
8
4
0
0.1
1
10
100 300
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
1
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
120
20
ID = 4.3A PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
ID, DRAIN CURRENT (A)
VGS = 10V
VGS = 6V
PULSE DURATION = 80μs
VGS = 5V DUTY CYCLE = 0.5% MAX
VGS = 4.5V
12
VGS = 4V
5
Figure 6. Transfer Characteristics
Figure 5. Forward Bias Safe Operating Area
16
TJ = -55oC
TJ = 25oC
VGS = 3.5V
8
4
90
TJ = 150oC
60
TJ = 25oC
VGS = 3V
0
30
0
1
2
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
8
10
1.2
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
NORMALIZED GATE
THRESHOLD VOLTAGE
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
6
Figure 8. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
2.0
1.6
1.4
1.2
1.0
0.8
0.6
-80
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Saturation Characteristics
1.8
2
ID = 4.3A
VGS = 10V
-40
0
40
80
120
TJ, JUNCTION TEMPERATURE(oC)
VGS = VDS
ID = 250μA
1.0
0.9
0.8
0.7
0.6
-80
160
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
FDC5661N_F085 Rev. A
1.1
-40
0
40
80
120
TJ, JUNCTION TEMPERATURE(oC)
160
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
5
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FDC5661N_F085 N-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics
1.15
2000
CAPACITANCE (pF)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
ID = 250μA
1.10
1.05
1.00
Ciss
1000
Coss
100
Crss
0.95
0.90
-80
-40
0
40
80
120
TJ, JUNCTION TEMPERATURE (oC)
10
0.1
160
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
f = 1MHz
VGS = 0V
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
Figure 12. Capacitance vs Drain to Source
Voltage
VGS, GATE TO SOURCE VOLTAGE(V)
Figure 14.
10
ID = 4.3A
8
VDD = 20V
6
VDD = 30V
4
VDD = 40V
2
0
0
3
6
9
Qg, GATE CHARGE(nC)
12
15
Figure 13. Gate Charge vs Gate to Source Voltage
FDC5661N_F085 Rev. A
6
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FDC5661N_F085 N-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics
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Datasheet contains the design specifications for product development. Specifications
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Rev. I37
FDC5661N_F085 Rev. A
7
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FDC5661N_F085 N-Channel Logic Level PowerTrench® MOSFET
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