AP50T10AGI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
100V
RDS(ON)
33mΩ
ID
G
34A
S
Description
AP50T10A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220CFM package is widely preferred for all
commercial-industrial through hole applications. The mold
compound provides a high isolation voltage capability and low
thermal resistance between the tab and the external heat-sink.
G
D
TO-220CFM(I)
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
3
Continuous Drain Current, V GS @ 10V
3
1
Rating
Units
100
V
+20
V
34
A
21.6
A
80
A
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
31.3
W
PD@TA=25℃
Total Power Dissipation
1.92
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
201305271
AP50T10AGI-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
100
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=16A
-
-
33
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=16A
-
19
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=16A
-
46
74
nC
Qgs
Gate-Source Charge
VDS=80V
-
9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
21
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
12
-
ns
tr
Rise Time
ID=16A
-
38
-
ns
td(off)
Turn-off Delay Time
RG=1Ω
-
24
-
ns
tf
Fall Time
VGS=10V
-
25
-
ns
Ciss
Input Capacitance
VGS=0V
-
1950 3120
pF
Coss
Output Capacitance
VDS=25V
-
185
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
145
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
4
Ω
Min.
Typ.
IS=16A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
45
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
60
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Ensure that the channel temperature does not exceed 150 oC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP50T10AGI-HF
100
80
10V
8.0V
7.0V
ID , Drain Current (A)
80
60
6.0V
40
10V
8.0V
7.0V
o
T C = 150 C
ID , Drain Current (A)
T C = 25 o C
60
6.0V
40
V G = 5.0V
20
20
V G = 5.0V
0
0
0
4
8
12
16
0
4
V DS , Drain-to-Source Voltage (V)
8
12
16
20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
2.4
I D =16A
I D =16A
V G =10V
T C =25 o C
2.0
Normalized RDS(ON)
RDS(ON) (mΩ)
50
40
1.6
1.2
30
0.8
0.4
20
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
2
I D =250uA
1.6
Normalized VGS(th)
IS(A)
16
12
T j =150 o C
T j =25 o C
8
4
1.2
0.8
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP50T10AGI-HF
I D =16A
V DS =80V
10
8
2000
C iss
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
3000
12
6
4
1000
2
0
C oss
C rss
0
0
10
20
30
40
50
60
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthjc)
Operation in this
area limited by
RDS(ON)
100us
ID (A)
10
1ms
10ms
1
100ms
DC
o
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4