TOSHIBA Preliminary GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 High Power Switching Applications Fast Switching Applications ● ● ● ● ● The 4th generation Enhancement-mode Fast Switching(FS) :Operating frequency up to 150kHz(Reference) ● :t High speed f=0.03μs(typ.) ● Low switching loss :Eon=0.26mJ(typ.) :Eoff=0.18mJ(typ.) Low saturation voltage :VCE(sat)=2.0V(typ.) FRD included between emitter and collector Maximum Ratings (Ta=25℃) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Emitter-collector DC forward current 1ms Collector power dissipation (Tc=25℃) Junction temperature Storage temperature range Symbol Ratings Unit VCES VGES IC ICP IF IFM 600 ±20 10 20 10 20 V V PC 29 W Tj Tstg 150 -55～150 ℃ ℃ A A 2001-6- 1/6 TOSHIBA GT10J321 Preliminary Electrical Characteristics(Ta=25℃) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation volatage Input capacitance Turn-on delay time Rise Time Switching time Turn-on Time Turn-off delay time Fall Time Turn-off Time Switching loss Turn-on switching loss Turn-off switching loss Peak forward voltage Reverse recovery time Thermal resistance(IGBT) Thermal resistance(Diode) Symbol IGES ICES VGE(OFF) VCE(sat) Cies td(on) tr ton td(off) tf toff Eon Eoff VF trr Rth(j-c) Rth(j-c) Test Condition VGE=±20V,VCE=0 VCE=600V,VGE=0 IC=1mA,VCE=5V IC=10A,VGE=15V VCE=10V,VGE=0,f=1MHz Inductive Load VCC=300V,IC=10A VGG=+15V,RG=68Ω (Note 1) (Note 2) IF=10A,VGE=0 IF=10A,di/dt=-100A/μs ― ― Min Typ. Max Unit - - ±500 nA mA V V 3.5 - 2.0 1500 0.06 0.03 0.17 0.24 0.03 0.30 0.26 0.18 - 1.0 6.5 2.45 0.15 2.0 200 pF μs mJ V ns 4.31 ℃/W 4.90 ℃/W 2001-6- 2/6 TOSHIBA GT10J321 Reference Common emitte Tc = 25℃ 20 15 16 Collector current IC (A) VCE - VGE IC - VCE Collector-emitter voltage VCE (V) 20 10 20 12 9 8 4 VGE = 8V 16 12 20 10 8 4 IC = 5A 0 0 0 1 2 3 4 Collector-emitter voltage V CE (V) 0 5 20 20 Collector-emitter voltage VCE (V) Common emitter Tc = -40℃ 16 12 20 8 10 4 IC = 5A 0 Common emitter Tc = 125℃ 16 12 20 8 10 IC = 5A 4 0 0 4 8 12 16 Gate-emitter voltage V GE (V) 20 0 IC - VGE Collector-emitter saturation voltage VCE(sat) (V) 20 Common emitter VCE = 5V 16 Collector current IC (A) 4 8 12 16 Gate-emitter voltage VGE (V) VCE - VGE VCE - VGE 20 Collector-emitter voltage VCE (V) Common emitter Tc = 25℃ 12 8 125 Tc = 25℃ 4 -40 0 0 4 8 12 16 Gate-emitter voltage VGE (V) 20 4 4 8 12 16 Gate-emitter voltage V GE (V) 20 VCE(sat) - Tc Common emitter VGE = 15V 20 15 3 10 5 2 IC = 2A 1 0 -60 -20 20 60 100 Case temperature Tc (℃) 2001-6- 140 3/6 TOSHIBA GT10J321 Reference Switching time tonon, ,ttrr,,ttd(on) Switching time d(on)--RR G G Common emitter VCC =300V VGG =15V IC =10A ：Tc=25℃ ：Tc=125℃ （Note1） 1 ton 0.1 td(on) tr ：Tc=25℃ ：Tc=125℃ （Note１） 1 ton 0.1 td(on) 0.01 1 10 100 Gate resistance R G (Ω) 1000 0 Switching time time ttoffoff , t,tf, ft,td(off) -R Switching -GRG d(off) 10 1 Switching time toff, tf, td(off) (μs) Common emitter VCC =300V VGG =15V IC =10A ：Tc=25℃ ：Tc=125℃ （Note1） toff 0.1 td(off) tf 0.01 2 4 6 Collector current IC (A) 8 10 Switching Switc ih time toffoff , t,tf, ft,td(off) -IC IC d(off) 10 エミッタ接地 Common emitter V VCC CC=300V VGG V GG=15V RGG=68Ω R ：Tc=25℃ ：Tc=25℃ ：Tc=125℃ ：Tc=125℃ （Note１） （Note１） 1 toff td(off) 0.1 tf 0.01 1 10 100 Gate resistance RG (Ω) 1000 0 Switching loss Eon, Eoff - RG 1 Eon 0.1 Eoff 0.01 1 Common emitter VCC =300V VGG =15V IC =10A ：Tc=25℃ ：Tc=125℃ （Note2） 10 100 Gate rtesistance R G (Ω) 2 1000 4 6 Collector current IC (A) 8 10 Switching loss Eon, Eoff - IC 1 Switching loss Eon , Eoff (mJ) Switching time toff, tf td(off) (μs) Common emitter VCC =300V VGG =15V RG =68Ω tr 0.01 Switching loss Eon , Eoff (mJ) Switching time tonon, ,ttr,r,ttd(on) Switching time d(on)--ICIC 10 Switching time ton, tr, td(on) (μs) Switching time ton , tr, td(on) (μs) 10 Eon 0.1 Eoff Common emitter VCC =300V VGG =15V RG =68Ω ：Tc=25℃ ：Tc=125℃ （Note2） 0.01 0 2 4 6 8 Collector current I C (A) 2001-6- 10 4/6 TOSHIBA GT10J321 Reference 1000 100 Coes Common emitter VGE =0 f=1MHz Tc=25℃ Cres 10 400 300 16 12 VCE=300V 200 8 200 100 4 100 0 0.1 1 10 100 Collector-emitter voltage VCE (V) 1000 0 0 IF-VF 20 20 Reverse recovery current Irr (A) VGE=0 16 12 125℃ 8 40 60 Gate chrage QG (nC) -40℃ 4 80 trr, Irr - IF 100 1000 Common collector di/dt=-100A/μs VGE =0 ：Tc=25℃ ：Tc=125℃ Common collector Forward current IF (A) 20 Common emitter RL =30Ω Tc=25℃ trr 100 10 Irr Reverse recovery time trr (ns) Collector-emitter voltage VCE (V) Cies Capacitance C (pF) VCE, VGE - QG 500 Gate-emitter voltage VGE (V) C-VCE 10000 Tc=25℃ 10 1 0 0 0.4 0.8 1.2 Forward voltage VF (V) 1.6 0 2 4 6 8 10 Forward current IF (A) Safeoperating operati Safe area 100 2 Reverse bias SOA 100 Collector current IC (A) Collector current IC (A) Ic max (pulsed)* 5 0 μ s* Ic max (continuous) 10 * 100μs DC operation 1 ms* 1 0 ms* 1 * ：Single nonrepetitive pulse Tc=25℃ Curves must be dilated linearly with increase in temperature. 10 1 Tj≦125℃ VGE=15V RG =68Ω 0.1 0.1 1 10 100 Collector-emitter voltage VCE (V) 1000 1 10 100 Collector-emitter voltage VCE (V) 2001-6- 1000 5/6 TOSHIBA GT10J321 Reference rth(t) - tw Transient thermal resistance rth(t) (℃/W) 102 1 10 FRD 0 10 IGBT 10-1 10 -2 10-3 10-4 -5 10 TC = 25℃ -4 10 -3 10 -2 -1 0 10 10 10 Pulse width tWw (s) Pulse (s) 10 1 10 2 2001-6- 6/6