GSI GS74116TP-8I 256k x 16 4mb asynchronous sram Datasheet

GS74116TP/J/U
SOJ, TSOP, FP-BGA
Commercial Temp
Industrial Temp
256K x 16
4Mb Asynchronous SRAM
Features
8, 10, 12, 15ns
3.3V VDD
Center VDD & VSS
SOJ 256K x 16 Pin Configuration
• Fast access time: 8, 10, 12, 15ns
• CMOS low power operation: 170/145/130/110 mA at min.cycle time.
• Single 3.3V ± 0.3V power supply
• All inputs and outputs are TTL compatible
• Byte control
• Fully static operation
• Industrial Temperature Option: -40° to 85°C
• Package line up
J: 400mil, 44 pin SOJ package
TP: 400mil, 44 pin TSOP Type II package
U: 7.20mm x 11.65mm Fine Pitch Ball Grid Array package
Description
The GS74116 is a high speed CMOS static RAM organized as
262,144-words by 16-bits. Static design eliminates the need for external clocks or timing strobes. Operating on a single 3.3V power supply
and all inputs and outputs are TTL compatible. The GS74116 is available in a 7.2x11.65 mm Fine Pitch BGA package, 400 mil SOJ and
400 mil TSOP Type-II packages.
Pin Descriptions
Symbol
Address input
DQ1 to DQ 16
Data input/output
CE
Chip enable input
LB
Lower byte enable input
(DQ1 to DQ8)
UB
1
2
3
4
5
6
7
8
9
10
11
12
VSS
Top view
44 pin
SOJ
13
14
15
DQ5
DQ6
DQ7
DQ8
WE
A15
A14
A13
A12
A16
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
16
17
18
27
26
25
24
23
19
20
21
22
A5
A6
A7
OE
UB
LB
DQ16
DQ15
DQ14
DQ13
VSS
VDD
DQ12
DQ11
DQ10
DQ9
NC
A8
A9
A10
A11
A17
Fine Pitch BGA 256K x 16 Bump Configuration
Description
A0 to A17
A4
A3
A2
A1
A0
CE
DQ1
DQ2
DQ3
DQ4
VDD
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
NC
B
DQ16
UB
A3
A4
CE
DQ1
Upper byte enable input
(DQ9 to DQ16)
C
DQ14 DQ15
A5
A6
DQ2
DQ3
WE
Write enable input
D
VSS
DQ13
A17
A7
DQ4
VDD
OE
Output enable input
E
VDD
DQ12
NC
A16
DQ5
VSS
VDD
+3.3V power supply
F
DQ11 DQ10
A8
A9
DQ7
DQ6
VSS
Ground
NC
No connect
G
DQ9
NC
A10
A11
WE
DQ8
H
NC
A12
A13
A14
A15
NC
7.2x11.65mm 0.75mm Bump Pitch
Top View
Rev: 2.02 3/2000
1/14
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
N
GS74116TP/J/U
TSOP-II 256K x 16 Pin Configuration
A4
A3
A2
A1
A0
CE
DQ1
DQ2
DQ3
DQ4
VDD
VSS
DQ5
DQ6
DQ7
DQ8
WE
A15
A14
A13
A12
A16
1
2
3
4
5
6
7
8
9
10
11
12
Top view
44 pin
TSOP II
13
14
15
44
43
42
41
40
39
38
37
36
35
34
33
32
31
A5
A6
A7
OE
UB
LB
DQ16
DQ15
DQ14
DQ13
VSS
VDD
DQ12
DQ11
DQ10
DQ9
NC
A8
A9
A10
A11
A17
30
29
28
16
17
18
27
26
25
24
23
19
20
21
22
Block Diagram
A0
Address
Input
Buffer
Row
Decoder
Column
Decoder
A17
CE
WE
Control
OE
_____
UB
LB _____
Rev: 2.02 3/2000
Memory Array
I/O Buffer
DQ1
DQ16
2/14
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
N
GS74116TP/J/U
Truth Table
CE
OE
WE
LB
UB
DQ1 to DQ8
DQ9 to DQ16
VDD Current
H
X
X
X
X
Not Selected
Not Selected
ISB1, ISB2
L
L
Read
Read
L
H
Read
High Z
H
L
High Z
Read
L
L
Write
Write
L
H
Write
Not Write, High Z
H
L
Not Write, High Z
Write
L
L
L
H
X
L
L
H
H
X
X
High Z
High Z
L
X
X
H
H
High Z
High Z
IDD
Note: X: “H” or “L”
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
-0.5 to +4.6
V
Input Voltage
VIN
-0.5 to VDD+0.5
(≤ 4.6V max.)
V
Output Voltage
VOUT
-0.5 to VDD+0.5
(≤ 4.6V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
TSTG
-55 to 150
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Rev: 2.02 3/2000
3/14
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
N
GS74116TP/J/U
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -10/12/15
VDD
3.0
3.3
3.6
V
Supply Voltage for -8
VDD
3.135
3.3
3.6
V
Input High Voltage
VIH
2.0
-
VDD+0.3
V
Input Low Voltage
VIL
-0.3
-
0.8
V
Ambient Temperature,
Commercial Range
TAc
0
-
70
o
Ambient Temperature,
Industrial Range
TAI
-40
-
85
o
C
C
Note:
1. Input overshoot voltage should be less than VDD+2V and not exceed 20ns.
2. Input undershoot voltage should be greater than -2V and not exceed 20ns.
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
CIN
VIN=0V
5
pF
Output Capacitance
COUT
VOUT=0V
7
pF
Notes:
1. Tested at TA=25°C, f=1MHz
2. These parameters are sampled and are not 100% tested
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage
Current
IIL
VIN = 0 to VDD
-1uA
1uA
Output Leakage
Current
ILO
Output High Z
VOUT = 0 to VDD
-1uA
1uA
Output High Voltage
VOH
IOH = - 4mA
2.4
Output Low Voltage
VOL
ILO = + 4mA
Rev: 2.02 3/2000
0.4V
4/14
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
N
GS74116TP/J/U
Power Supply Currents
Parameter
Symbol
Test Conditions
0 to 70°C
-40 to 85°C
8ns
10ns
12ns
15ns
10ns
12ns
15ns
IDD
CE ≤ VIL
All other inputs
≥ VIH or ≤ VIL
Min. cycle time
IOUT = 0 mA
170mA
145mA
130mA
110mA
155mA
140mA
120mA
Standby
Current
ISB1
CE ≥ VIH
All other inputs
≥ VIH or ≤VIL
Min. cycle time
70mA
65mA
60mA
55mA
75mA
70mA
65mA
Standby
Current
ISB2
CE ≥ VDD - 0.2V
All other inputs
≥ VDD - 0.2V or ≤ 0.2V
Operating
Supply
Current
30mA
40mA
AC Test Conditions
Output Load 1
Parameter
Conditions
Input high level
VIH=2.4V
Input low level
VIL=0.4V
Input rise time
tr=1V/ns
Input fall time
tf=1V/ns
Input reference level
1.4V
Output Load 2
Output reference level
1.4V
3.3V
Output load
Fig. 1& 2
DQ
50Ω
VT=1.4V
589Ω
DQ
Note:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted
3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ.
Rev: 2.02 3/2000
30pF1
5/14
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
5pF1
434Ω
© 1999, Giga Semiconductor, Inc.
N
GS74116TP/J/U
AC Characteristics
Read Cycle
Parameter
Symbol
Read cycle time
-8
-10
-12
-15
Unit
Min
Max
Min
Max
Min
Max
Min
Max
tRC
8
---
10
---
12
---
15
---
ns
Address access time
tAA
---
8
---
10
---
12
---
15
ns
Chip enable access time (CE)
tAC
---
8
---
10
---
12
---
15
ns
Byte enable access time (UB, LB)
tAB
---
3.5
---
4
---
5
---
6
ns
Output enable to output valid (OE)
tOE
---
3.5
---
4
---
5
---
6
ns
Output hold from address change
tOH
3
---
3
---
3
---
3
---
ns
Chip enable to output in low Z (CE)
tLZ*
3
---
3
---
3
---
3
---
ns
Output enable to output in low Z (OE)
tOLZ*
0
---
0
---
0
---
0
---
ns
Byte enable to output in low Z (UB, LB)
tBLZ*
0
---
0
---
0
---
0
---
ns
Chip disable to output in High Z (CE)
tHZ*
---
4
---
5
---
6
---
7
ns
Output disable to output in High Z (OE)
tOHZ*
---
3.5
---
4
---
5
---
6
ns
Byte disable to output in High Z (UB, LB)
tBHZ*
---
3.5
---
4
---
5
---
6
ns
* These parameters are sampled and are not 100% tested
Read Cycle 1: CE = OE = VIL, WE = VIH, UB and, or LB = VIL
tRC
Address
tAA
tOH
Data Out
Rev: 2.02 3/2000
Previous Data
Data valid
6/14
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
N
GS74116TP/J/U
Read Cycle 2: WE = VIH
tRC
Address
tAA
CE
tAC
tHZ
tLZ
tAB
UB, LB
tBHZ
tBLZ
OE
tOE
Data Out
tOHZ
Data valid
tOLZ
High impedance
Write Cycle
Parameter
Symbol
Write cycle time
-8
-10
-12
-15
Unit
Min
Max
Min
Max
Min
Max
Min
Max
tWC
8
---
10
---
12
---
15
---
ns
Address valid to end of write
tAW
5.5
---
7
---
8
---
10
---
ns
Chip enable to end of write
tCW
5.5
---
7
---
8
---
10
---
ns
Byte enable to end of write
tBW
5.5
---
7
---
8
---
10
---
ns
Data set up time
tDW
4
---
5
---
6
---
7
---
ns
Data hold time
tDH
0
---
0
---
0
---
0
---
ns
Write pulse width
tWP
5.5
---
7
---
8
---
10
---
ns
Address set up time
tAS
0
---
0
---
0
---
0
---
ns
Write recovery time (WE)
tWR
0
---
0
---
0
---
0
---
ns
Write recovery time (CE)
tWR1
0
---
0
---
0
---
0
---
ns
Output Low Z from end of write
tWLZ*
3
---
3
---
3
---
3
---
ns
Write to output in High Z
tWHZ*
---
3.5
---
4
---
5
---
6
ns
* These parameters are sampled and are not 100% tested
Rev: 2.02 3/2000
7/14
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
N
GS74116TP/J/U
Write Cycle 1: WE control
tWC
Address
tAW
tWR
OE
tCW
CE
tBW
UB, LB
tAS
tWP
WE
tDW
tDH
Data valid
Data In
tWHZ
tWLZ
Data Out
High impedance
Write Cycle 2: CE control
tWC
Address
tAW
tWR1
OE
tAS
tCW
CE
tBW
UB, LB
tWP
WE
tDW
Data valid
Data In
Data Out
Rev: 2.02 3/2000
tDH
High impedance
8/14
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
N
GS74116TP/J/U
Write Cycle 3: UB, LB control
tWC
Address
tAW
tWR1
OE
tAS
tCW
CE
tBW
UB, LB
tWP
WE
tDW
Data valid
Data In
Data Out
Rev: 2.02 3/2000
tDH
High impedance
9/14
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
N
GS74116TP/J/U
44 Pin, 400 mil SOJ
Symbol
L
D
c
HE
GE
23
E
44
-
-
0.148
-
-
3.759
A1
0.025
-
-
0.635
-
-
A2
0.105 0.110 0.115
2.667
2.794
2.921
-
0.457
-
0.660
0.711
0.813
-
0.203
-
28.44
28.58
28.70
B
c
22
e
A2
A
A1
A
B
B1
Detail A
Q
-
0.018
-
0.026 0.028 0.032
-
0.008
-
D
1.120 1.125 1.130
E
0.395 0.400 0.405 10.033 10.160 10.287
e
y
Dimension in mm
min nom max
A
B1
1
Dimension in inch
min nom max
-
0.05
-
-
1.27
-
HE
0.435 0.440 0.445 11.049 11.176 11.303
GE
0.360 0.370 0.380
9.144
9.398
9.652
L
0.082 0.087 0.106
2.083
2.210
2.70
y
-
Q
0o
-
0.004
-
-
0.102
-
7o
0o
-
7o
Note:
1. Dimension D& E do not include interlead flash
2. Dimension B1 does not include dambar protrusion / intrusion
Rev: 2.02 3/2000
10/14
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
N
GS74116TP/J/U
44 Pin, 400 mil TSOP-II
D
c
22
e
B
L
L1
A1
A
y
Detail A
Rev: 2.02 3/2000
A
-
-
0.047
-
-
1.20
A1
0.002
-
-
0.05
-
-
A2
0.037 0.039 0.041
0.95
1.00
1.05
B
0.01
0.25
0.35
0.45
c
-
-
0.15
-
Q
0.014 0.018
0.006
-
D
0.721 0.725 0.729 18.31 18.41 18.51
E
0.396 0.400 0.404 10.06 10.16 10.26
e
A2
1
A
HE
23
E
44
Dimension in inch Dimension in mm
Symbol min nom max min nom max
-
0.031
-
-
0.80
-
HE
0.455 0.463 0.471 11.56 11.76 11.96
L
0.016 0.020 0.024
0.40
0.50
0.60
L1
-
0.031
-
-
0.80
-
y
-
-
0.004
-
-
0.10
Q
o
o
-
5o
0
-
5
o
0
Note:
1. Dimension D& E do not include interlead flash
2. Dimension B does not include dambar protrusion / intrusion
3. Controlling dimension: mm
11/14
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
N
GS74116TP/J/U
7.2mmx11.65mm FP-BGA
D
Symbol
Unit: mm
A
1.10 ± 0.10
·
0.22 ± 0.05
A1
φb
E
Pin A1
Index
Top View
A
c
A1
Pin A1
Index
Side View
φ0.35
c
0.36(TYP)
D
11.65 ± 0.10
D1
5.25
E
7.20 ± 0.10
E1
3.75
e
0.75(TYP)
aaa
0.10
aaa
A B C D E F G H
1
2
3
4
5
6
φb Solder Ball
e
E1
e
D1
Bottom View
Rev: 2.02 3/2000
12/14
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
N
GS74116TP/J/U
Ordering Information
*
Part Number*
Package
Access Time
Temp. Range
GS74116TP-8
400 mil TSOP-II
8 ns
Commercial
GS74116TP-10
400 mil TSOP-II
10 ns
Commercial
GS74116TP-12
400 mil TSOP-II
12 ns
Commercial
GS74116TP-15
400 mil TSOP-II
15 ns
Commercial
GS74116TP-8I
400 mil TSOP-II
8 ns
Industrial
GS74116TP-10I
400 mil TSOP-II
10 ns
Industrial
GS74116TP-12I
400 mil TSOP-II
12 ns
Industrial
GS74116TP-15I
400 mil TSOP-II
15 ns
Industrial
GS74116J-8
400 mil SOJ
8 ns
Commercial
GS74116J-10
400 mil SOJ
10 ns
Commercial
GS74116J-12
400 mil SOJ
12 ns
Commercial
GS74116J-15
400 mil SOJ
15 ns
Commercial
GS74116J-8I
400 mil SOJ
8 ns
Industrial
GS74116J-10I
400 mil SOJ
10 ns
Industrial
GS74116J-12I
400 mil SOJ
12 ns
Industrial
GS74116J-15I
400 mil SOJ
15 ns
Industrial
GS74116U-8
Fine Pitch BGA
8 ns
Commercial
GS74116U-10
Fine Pitch BGA
10 ns
Commercial
GS74116U-12
Fine Pitch BGA
12 ns
Commercial
GS74116U-15
Fine Pitch BGA
15 ns
Commercial
GS74116U-8I
Fine Pitch BGA
8 ns
Industrial
GS74116U-10I
Fine Pitch BGA
10 ns
Industrial
GS74116U-12I
Fine Pitch BGA
12 ns
Industrial
GS74116U-15I
Fine Pitch BGA
15 ns
Industrial
Status
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. For example: GS74116TP-10T
Rev: 2.02 3/2000
13/14
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
N
GS74116TP/J/U
Revision History
Rev. Code: Old;
New
Rev1.03c 3/1999;
1.04d 6/1999
Types of Changes
Page #/Revisions/Reason
Format or Content
Format/Typos
Content
Format/Typos
1.04d 6/1999;
2.00 8/1999
Document/Changed format of subscripts on pins to small caps.
13/Changed Tape and Reel Note at end of Ordering info./Enhancement
None
Content
1.
2.
3.
Added Fine Pitch BGA package to datasheet.
10/Added Dimension “D” to SOJ package diagram/Was missing
11/Added Dimension “D” to TSOP package diagram/Was missing
GS741Rev2.01KRev 21 2/2000L
Format/Content
1.
2.
GSI Logo
GS74116 Rev2.01 2/2000L; Rev
2.02 3/2000N
Content
1.
Changed Pin A17 from 3E to 3D.
Rev: 2.02 3/2000
14/14
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
N
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