Hitachi ECN3064SPR High-voltage monolithic ic Datasheet

ECN3064
4.
Electrical Characteristics (Ta=25 °C)
Unless otherwise specified, VCC=15V, VS=325V
Suffix T; Top arm
No.
Items
1 Standby Current
2
3 Output device FVD
4
Symbols
IS
ICC
VFT
Terminal
VS1,VS2
VCC
MU,MV,
MW
MU,MV,
MW
MU,MV,
MW
MU,MV,
MW
MU,MV,
MW
MU,MV,
MW
MU,MV,
MW
MU,MV,
MW
UT,VT,W
T,
UB,VB,W
B
UT,VT,W
T,
UB,VB,W
B
CB
CB
RS
MIN
-
TYP
0.5
10
2.2
MAX
1.5
20
3.0
Unit
mA
mA
V
-
2.2
3.0
V
-
1.0
2.0
µs
-
1.0
2.0
µs
I=0.35A
-
1.0
2.0
µs
Resistive Load
-
1.0
2.0
µs
-
2.2
2.8
V
-
2.4
3.0
V
3.5
-
-
V
-
-
1.5
V
-
-
100
µA
6.8
25
0.45
7.5
0.5
8.2
0.55
V
mA
V
LVSDON VCC,MU,
LVSDOFF MV,MW
Vrh
10.0
10.1
0.1
11.5
12.0
0.5
12.9
13.0
0.9
V
V
V
VFB
5
Turn On
TdONT
6
Delay Time
TdONB
7
Turn Off
TdOFFT
8
Delay Time
TdOFFB
9
Diode FVD
VFDT
10
VFDB
11 Input Voltage
VIH
12
VIL
13 Input Current
IIH
14 VB Output Voltage
15 VB Output Current
16 Reference Voltage
for Overcurrent
17 LVSD Output Voltage
18 LVSD recover Voltage
19 LVSD reset hysterisis
B; Bottom arm
VB
IB
Vref
Condition
UT,VT,WT,UB,VB,
WB=0V
I=0.35A
I=0.35A
I=0.35A
Input=5V Note 1
Pull Down Resistance
deltaVLoad=0.1V
Note.2
Note 1. Pull Down Resistance are typically 200 kΩ.
Note 2. LVSD : Low Voltage Shut Down
PDE-3064-0
ECN3064
5. Function
5.1
5.2
Truth Table
Terminal
Input
Output
UT,VT,WT,
L
OFF
UB,VB,WB
H
ON
UT,UB
UT&UB=H
OFF
VT,VB
VT&VB=H
OFF
WT,WB
WT&WB=H
OFF
Timing Chart
UT
Top Arm
VT
WT
UB
Bottom Arm
VB
WB
MU Output
MV Output
MW Output
Example of DC Brushless motor drive
5.3 Overcurrent Limiting Operation
VB
This IC detects overcurrent by outside resistance Rs.
When Rs input voltage exceeds inner reference voltage
Vref(0.5V typical), this IC turns off the bottom output. After
typ 200kΩ
typ 220kΩ
RS
typ 300Ω
S
Latch
R
typ
5pF
Vref
overcurrent detection, a reset operation is done
at each inner clock signal period.
In case of not using this function, please connect Rs
Inner Clock Trigger
RS terminal inner equvalent circuit
terminal to GL terminal.
PDE-3064-0
ECN3064
6.
Standard Application
Component
Recommended Value
C0
More than 0.22 uF
C1,C2
D1,D2
1.0 uF +/- 20%
Hitachi DFG1C6(Glass
mold type), DFM1F6
(Resin mold type)
or considerable parts
1800 pF +/- 5%
22 k-ohm +/- 5%
CTR
RTR
Usage
for inner power
supply(VB).
for charge pump
For charge pump
Remark
stress voltage is VB
for clock
for clock
Note 1.
Note 1.
stress voltage is VCC
600V/1.0A
trr ≤ 100ns
Note 1. Clock frequency is determined approximately by next equation.
Floating capacitance of PCB must be considered.
At Recommended Value of CR, the error factor of IC is about 10%.
fclock = -1 / (2C*R*Ln(1-3.5/5.5))
; Ln is natural logarithm
= 0.494 / (C*R)
(Hz)
VCC(15V)
D1
D2
+ C1
-
C2
+
-
C0
CB
C+
C-
CL
VS
VS1
VS2
VB
VCC
VB supply
Charge Pump
Clock
UT
VT
WT
Top Arm
Driver
Motor
MU
Microprocessor
MV
MW
UB
Bottom Arm
Driver
VB
WB
Pulse Generator
CLOCK
Latch
R
S
+
CR
VTR
GL
RS
Filter
1µs
Vref
0.5V
GH1
GH2
RTR
CTR
RS
Vref
PDE-3064-0
ECN3064
7.
Terminal
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
MV
VS1
MU
GH1
UT
VT
WT
RS
UB
VB
WB
VTR
CR
CB
CL
CC+
GL
VCC
GH2
3
2
1
MW
VS2
(Marking Side)
Fig.2 Pin Assignment
8.
Package
Outline
ECN3064SP
(SP-23TA)
ECN3064SPV
(SP-23TB)
ECN3064 SPR
(SP-23TR)
PDE-3064-0
ECN3064
9.
Package Dimensions
(1) ECN3064SP (SP-23TA)
(2) ECN3064SPV
(Unit:mm)
(SP-23TB)
PDE-3064-0
ECN3064
(3) ECN3064SPR (SP-23TR)
31MAX
(30)
28
20
±0.2
±0.2
1.26
±0.24
3.6 ±0.2
0.6
±0.1
1.27 ±0.5
2.54 ±0.5
+10°
0°
-0°
0.25 typ
1.8 typ
7.1 ±0.5
4.9 ±0.5
23.97 ±0.3
+10°
0°
-0°
2.2 ±0.3
(7.7)
23
±0.25
12.3 ±0.5
±0.3
(9)
±0.3
4.1
1
1.23
3.5 ±0.3
φ3.6
±0.2
11.2
14.7MAX
0.5
±0.3
2.54 ±0.5
PDE-3064-0
HITACHI POWER SEMICONDUCTORS
Notices
1.The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4.In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6.No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8.The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
„ For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse
Similar pages