APTGV100H60T3G Full - Bridge NPT & Trench + Field Stop® IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 90A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 100A @ Tc = 80°C Q3 11 • Solar converter Features 19 Q2 22 7 23 8 CR2 26 10 Q4 CR4 4 27 • Q1, Q3 Trench & Field Stop IGBT® - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current 3 29 30 31 15 32 R1 16 • • • • Top switches : Trench + Field Stop IGBT® Bottom switches : FAST NPT IGBT 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 • Q2, Q4 FAST Non Punch Through (NPT) IGBT - Switching frequency up to 100 kHz - RBSOA & SCSOA rated - Low tail current 8 10 11 12 Benefits • • • • Optimized conduction & switching losses Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS Compliant These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-9 APTGV100H60T3G – Rev 0 June, 2007 All multiple inputs and outputs must be shorted together 13/14 ; 15/16 ; 26/27 ; 31/32 Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring APTGV100H60T3G All ratings @ Tj = 25°C unless otherwise specified 1. Top switches 1.1 Top Trench + Field Stop IGBT® characteristics Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 600 150 * 100 * 200 ±20 340 Tj = 150°C 200A @ 550V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A V W * Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 100A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Min 5.0 Typ 1.5 1.7 5.8 Max Unit 250 1.9 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy RthJC Junction to Case Thermal resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 100A Tj = 25°C RG = 3.3Ω Tj = 150°C Min Typ 6100 390 190 115 45 225 pF ns 55 130 50 ns 300 70 0.4 0.875 2.5 3.5 mJ mJ 0.44 www.microsemi.com June, 2007 Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time °C/W 2-9 APTGV100H60T3G – Rev 0 Symbol Cies Coes Cres Td(on) Tr Td(off) APTGV100H60T3G 1.2 Top fast diode characteristics Symbol Characteristic VRRM IRM IF VF Min Maximum Reverse Leakage Current VR=600V DC Forward Current Reverse Recovery Time Qrr Reverse Recovery Charge Max IF = 100A VR = 400V di/dt =200A/µs Unit V Tj = 25°C Tj = 125°C 100 500 Tc = 80°C IF = 100A IF = 200A IF = 100A Diode Forward Voltage Typ 600 Maximum Peak Repetitive Reverse Voltage trr RthJC Test Conditions Tj = 125°C 100 1.6 2 1.3 Tj = 25°C 160 Tj = 125°C Tj = 25°C 220 290 Tj = 125°C 1530 Junction to Case Thermal resistance µA A 2 V ns nC 0.55 °C/W 2. Bottom switches 2.1 Bottom Fast NPT IGBT characteristics Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Tc = 25°C Max ratings 600 110 90 315 ±20 416 Tj = 150°C 200A @ 600V Tc = 25°C Tc = 80°C Tc = 25°C Reverse Bias Safe Operating Area Unit V A V W Electrical Characteristics Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Min Typ 2.0 2.2 3 Max 250 500 2.5 Unit 5 ±150 V nA µA V June, 2007 ICES Test Conditions VGE = 0V Tj = 25°C VCE = 600V Tj = 125°C Tj = 25°C VGE =15V IC = 90A Tj = 125°C VGE = VCE, IC = 1mA VGE = 20 V, VCE = 0V www.microsemi.com 3-9 APTGV100H60T3G – Rev 0 Symbol Characteristic APTGV100H60T3G Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 90A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω VGE = 15V Tj = 125°C VBus = 400V IC = 90A Tj = 125°C RG = 5 Ω Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance Min Typ 4300 470 400 330 290 200 26 25 150 Max Unit pF nC ns 30 26 25 ns 170 40 4.3 mJ 3.5 0.3 °C/W Max Unit 2.2 Bottom diode characteristics VRRM IRM Test Conditions Maximum Reverse Leakage Current DC Forward Current VF Diode Forward Voltage VR=600V Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V di/dt =200A/µs V Tj = 25°C Tj = 125°C 250 500 Tc = 80°C trr Typ 600 Maximum Peak Repetitive Reverse Voltage IF RthJC Min Tj = 125°C 30 1.6 1.9 1.4 Tj = 25°C 85 Tj = 125°C Tj = 25°C 160 130 Tj = 125°C 700 Junction to Case Thermal resistance µA A 1.8 V ns nC 1.2 °C/W Max Unit kΩ K June, 2007 3. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min Typ 50 3952 R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 − T25 T www.microsemi.com 4-9 APTGV100H60T3G – Rev 0 Symbol Characteristic APTGV100H60T3G 4. Package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic Min 2500 -40 -40 -40 2.5 RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ Max 150* 125 100 4.7 110 Unit V °C N.m g Tj=175°C for Trench & Field Stop IGBT 5. SP3 Package outline (dimensions in mm) 28 17 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com 6. Top switches curves 6.1 Top Trench + Field Stop IGBT® typical performance curves Output Characteristics (VGE=15V) Output Characteristics 200 125 IC (A) IC (A) TJ=150°C 100 75 50 0.5 1 1.5 VCE (V) VGE=9V 25 TJ=25°C 0 VGE=15V 100 50 0 VGE=13V 125 75 25 VGE=19V 150 TJ=125°C 150 TJ = 150°C 175 June, 2007 TJ=25°C 175 0 2 2.5 3 www.microsemi.com 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 5-9 APTGV100H60T3G – Rev 0 200 APTGV100H60T3G Energy losses vs Collector Current Transfert Characteristics 200 7 175 6 TJ=25°C 150 5 E (mJ) 125 IC (A) VCE = 300V VGE = 15V RG = 3.3Ω TJ = 150°C 100 TJ=125°C 75 Eoff 4 3 2 50 TJ=150°C TJ=25°C 0 0 5 6 7 Eon 1 25 8 9 10 11 0 12 25 50 75 Switching Energy Losses vs Gate Resistance 8 200 Eoff IF (A) E (mJ) Reverse Bias Safe Operating Area 250 VCE = 300V VGE =15V IC = 100A TJ = 150°C 6 100 125 150 175 200 IC (A) VGE (V) 4 150 100 2 VGE=15V TJ=150°C RG=3.3Ω 50 Eon 0 0 0 5 10 15 20 25 Gate Resistance (ohms) 30 0 100 200 300 400 VCE (V) 500 600 700 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.5 0.4 0.9 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds 6.2 Top Fast diode typical performance curves IF, Forward Current (A) Forw ard Current vs Forw ard Voltage 300 250 T J=175°C 200 150 T J=25°C 100 T J=125°C T J=-55°C 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V F, Anode to Cathode Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 0.3 0.9 0.7 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 June, 2007 0.5 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) www.microsemi.com 6-9 APTGV100H60T3G – Rev 0 Thermal Impedance (°C/W) 0.6 APTGV100H60T3G 7. Bottom switches curves 7.1 Bottom fast NPT IGBT typical performance curves Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 300 250µs Pulse Test < 0.5% Duty cycle 300 TJ=-55°C 250 Ic, Collector Current (A) TJ=25°C 200 150 TJ=125°C 100 50 250µs Pulse Test < 0.5% Duty cycle 250 200 TJ=25°C 150 100 TJ=125°C 50 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) 0 4 1 2 Transfer Characteristics 250 TJ=-55°C 200 150 100 TJ=25°C 50 TJ=125°C TJ=-55°C 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. 8 TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 6 Ic=180A 5 4 3 Ic=90A 2 Ic=45A 1 0 6 8 10 12 14 VGE, Gate to Emitter Voltage (V) VCE=120V IC = 90A TJ = 25°C 16 14 VCE=300V 12 10 VCE=480V 8 6 4 2 0 0 10 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) 0 4 Gate Charge 18 250µs Pulse Test < 0.5% Duty cycle VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 300 3 VCE, Collector to Emitter Voltage (V) 50 100 150 200 250 Gate Charge (nC) 300 350 On state Voltage vs Junction Temperature 4 3.5 Ic=180A 3 2.5 Ic=90A 2 1.5 Ic=45A 1 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.5 0 -50 16 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature 140 Ic, DC Collector Current (A) 1.20 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 120 100 125 TJ, Junction Temperature (°C) www.microsemi.com 80 60 40 20 June, 2007 0 Collector to Emitter Breakdown Voltage (Normalized) TJ=-55°C 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 7-9 APTGV100H60T3G – Rev 0 Ic, Collector Current (A) 350 APTGV100H60T3G Turn-Off Delay Time vs Collector Current VGE = 15V 30 25 Tj = 25°C VCE = 400V RG = 5Ω 20 15 25 50 75 100 125 150 td(off), Turn-Off Delay Time (ns) 250 VGE=15V, TJ=125°C 200 150 100 50 25 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VGE=15V, TJ=125°C 20 125 150 60 TJ = 125°C 40 20 TJ = 25°C 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150 25 Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ) 8 Eon, Turn-On Energy Loss (mJ) 100 VCE = 400V, VGE = 15V, RG = 5Ω tf, Fall Time (ns) tr, Rise Time (ns) VCE = 400V RG = 5Ω 0 VCE = 400V RG = 5Ω 6 TJ=125°C, VGE=15V 4 TJ=25°C, VGE=15V 2 0 0 25 50 75 100 125 6 VCE = 400V VGE = 15V RG = 5Ω 5 4 TJ = 25°C 2 1 0 150 0 50 75 100 125 150 Reverse Bias Safe Operating Area Eon, 180A Eoff, 90A Eon, 90A Eoff, 45A 4 Eon, 45A 0 20 30 40 50 Gate Resistance (Ohms) www.microsemi.com 200 150 100 June, 2007 IC, Collector Current (A) Eoff, 180A 8 10 25 ICE, Collector to Emitter Current (A) 250 VCE = 400V VGE = 15V TJ= 125°C 0 150 TJ = 125°C 3 Switching Energy Losses vs Gate Resistance 12 50 75 100 125 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current ICE, Collector to Emitter Current (A) Switching Energy Losses (mJ) 75 Current Fall Time vs Collector Current 80 40 16 50 ICE, Collector to Emitter Current (A) 80 60 VGE=15V, TJ=25°C VCE = 400V RG = 5Ω 50 0 0 200 400 600 800 VCE, Collector to Emitter Voltage (V) 8-9 APTGV100H60T3G – Rev 0 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 35 APTGV100H60T3G Capacitance vs Collector to Emitter Voltage C, Capacitance (pF) Cies 1000 Coes Cres 100 0 10 20 30 200 Fmax, Operating Frequency (kHz) 10000 40 Operating Frequency vs Collector Current VCE = 400V D = 50% RG = 5Ω TJ = 125°C TC = 75°C ZVS 160 120 ZCS 80 40 Hard switching 0 50 20 40 60 80 100 IC, Collector Current (A) VCE, Collector to Emitter Voltage (V) 120 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.25 0.9 0.7 0.2 0.15 0.1 0.5 0.3 0.1 0.05 0 0.00001 0.05 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 7.2 Bottom diode typical performance curves Forw ard Current vs Forw ard Voltage IF, Forward Current (A) 80 70 60 T J=125°C 50 40 T J=25°C 30 20 T J=-55°C 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V F, Anode to Cathode Voltage (V) Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.2 1 0.8 0.9 0.7 0.5 0.6 0.2 0 0.00001 0.3 0.1 0.05 June, 2007 0.4 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 9-9 APTGV100H60T3G – Rev 0 Thermal Impedance (°C/W) 1.4