Kexin CR05AS Silicon controlled rectifier Datasheet

Thyristor
SMD Type
Silicon Controlled Rectifiers
CR05AS
■ Features
1.70
● Blocking Voltage to 400 V
0.1
● High Surge Current Capability — 10 A
● Glass-Passivated Surface for Reliability and Uniformity
0.42 0.1
0.46 0.1
1.Gate
2.Anode
3.Cathode
G
A
K
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Peak Repetitive Forward and Reverse Blocking Voltage
(TJ = 25 to 125 ℃, RGK = 1 K Ω)
V DRM
and
V RRM
400
V
Forward Current RMS
IT (RMS)
0.8
A
Average on-state current
IT (AV)
0.5
A
IT SM
10
A
I2t
0.415
As
PGM
0.1
W
Peak Forward Surge Current, TA = 25℃
(1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Power ─ Forward, TA = 25 ℃
2
P GF (AV)
0.01
W
Peak Gate Current ─ Forward, TA = 25 ℃ (300 ms, 120 PPS)
IGFM
0.1
A
Peak Gate Voltage ─ Reverse
VGRM
6
V
Thermal Resistance, Junction to Ambient
RθJA
200
℃/W
Thermal Resistance, Junction to Case
RθJC
75
℃/W
TJ
-40 to +125
℃
Tstg
-40 to +150
℃
260
℃
Average Gate Power ─ Forward, TA = 25 ℃
Operating Junction Temperature Range @ Rated V RRM and V DRM
Storage Temperature Range
Lead Solder Temperature(<1/16"from case, 10 s max)
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Thyristor
SMD Type
CR05AS
■ Electrical Characteristics (Ta = 25℃,RGK = 1 kΩ unless otherwise noted.)
Parameter
Symbol
Peak Forward or Reverse
TC = 25℃
Blocking Current
TC = 125 ℃
Test conditons
Min
Max
10
IDRM, IR RM VAK = Rated VDRM or VRRM
100
Unit
μA
Forward "On" Voltage *1
VTM
ITM = 1 A Peak @ TA = 25℃
1.7
V
Gate Trigger Current (Continuous DC) *2 TC = 25 ℃
IGT
Anode Voltage = 7 V, RL = 100Ω
200
μA
VGT
Anode Voltage=7V,RL=100 Ω
Gate Trigger Voltage (Continuous DC)
TC = 25 ℃
TC = -40℃
Holding Current
TC=25℃
TC=-40 ℃
IH
0.8
V
1.2
Anode Voltage=7V,initiating current=20mA
5
10
mA
*1. Forward current applied for 1 ms maximum duration, duty cycle ≤ 1%.
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Thyristor
SMD Type
CR05AS
■ Typical Characteristics
90
0.9
GATE TRIGGER VOLTAGE (VOLTS)
1.0
GATE TRIGGER CURRENT ( m A)
100
80
70
60
50
40
30
20
10
−40 −25 −10
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95
0.8
0.7
0.6
0.5
0.4
0.3
0.2
−40 −25 −10
5
20 35 50
65 80
TJ, JUNCTION TEMPERATURE (°C)
110
Figure 1. Typical Gate Trigger Current versus
Junction Temperature
1000
100
10
−40 −25 −10
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95
100
10
−40 −25 −10
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
110
120
110
100
90
DC
80
70
180°
60
50
30°
0
60°
90°
120°
0.1
0.2
0.3
0.4
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 5. Typical RMS Current Derating
95
110
Figure 4. Typical Latching Current versus
Junction Temperature
0.5
I T, INSTANTANEOUS ON−STATE CURRENT (AMPS)
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
Figure 3. Typical Holding Current versus
Junction Temperature
40
110
Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature
LATCHING CURRENT ( m A)
HOLDING CURRENT (m A)
1000
95
10
MAXIMUM @ TJ = 25°C
MAXIMUM @ TJ = 110°C
1
0.1
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 6. Typical On−State Characteristics
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