MBRS540T3G, NRVBS540T3G Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 5.0 AMPERES, 40 VOLTS Features • • • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard−Ring for Stress Protection NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are PB−Free Packages* SMC CASE 403 MARKING DIAGRAM AYWW B540G G Mechanical Characteristics • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 @ 0.125 in • Weight: 217 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • • • 260°C Max. for 10 Seconds Polarity: Notch in Plastic Body Indicates Cathode Lead ESD Rating: ♦ Machine Model, C (> 400 V) ♦ Human Body Model, 3B (> 8000 V) Device Meets MSL 1 Requirements B540 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MBRS540T3G SMC (Pb−Free) 2,500 / Tape & Reel NRVBS540T3G SMC (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 July, 2013 − Rev. 8 1 Publication Order Number: MBRS540T3/D MBRS540T3G, NRVBS540T3G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 40 V Average Rectified Forward Current (At Rated VR, TC = 105°C) IF(AV) 5 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 KHz, TC = 80°C) IFRM 10 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 190 A Storage Temperature Range Tstg −65 to +150 °C TJ −65 to +150 °C dv/dt 10,000 V/ms Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction−to−Lead (Note 2) Thermal Resistance, Junction−to−Ambient (Note 2) Value RqJL 12 RqJA 111 Symbol Value Unit °C/W 2. Rating applies when surface mounted on the minimum pad size recommended. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 5.0 A, TC= 25°C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = 25°C) (Rated dc Voltage, TC = 100°C) iR 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 0.50 0.3 15 Unit V mA MBRS540T3G, NRVBS540T3G TYPICAL CHARACTERISTICS 10 iF, INSTANTANEOUS FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 10 TJ = 125°C 1 TJ = −40°C TJ = 100°C TJ = 25°C 0.1 0.10 0.30 0.20 TJ = −55°C 0.40 0.50 TJ = 125°C 1 TJ = 100°C TJ = 25°C TJ = −40°C 0.60 VF, INSTANTANEOUS FORWARD VOLTAGE (V) TJ = 100°C 100E−6 10E−6 TJ = 25°C 1E−6 TJ = −55°C 10E−9 1E−9 100E−12 0 10 20 30 VR, REVERSE VOLTAGE (V) 40 TJ = 100°C 1E−3 TJ = 25°C TJ = −55°C 10E−6 1E−6 0 10 20 30 VR, REVERSE VOLTAGE (V) PFO, AVERAGE POWER DISSIPATION (W) IO, AVERAGE FORWARD CURRENT (A) 8 7 6 5 4 3 SQUARE WAVE Ipk/IO = p Ipk/IO = 5 2 1 0 25 50 75 100 125 40 Figure 4. Maximum Reverse Current freq = 20 kHz dc 0.70 10E−3 Figure 3. Typical Reverse Current 9 0.60 0.50 TJ = 125°C 100E−6 100E−9 0.40 100E−3 IR, MAXIMUM REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 1E−3 0.30 Figure 2. Maximum Forward Voltage TJ = 125°C 10E−3 0.20 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage 100E−3 TJ = −55°C 0.1 0.10 150 TL, LEAD TEMPERATURE (°C) 4.5 4 SQUARE WAVE 3.5 dc 3 2.5 2 Ipk/IO = p 1.5 Ipk/IO = 5 1 Ipk/IO = 10 0.5 0 Ipk/IO = 20 0 Figure 5. Current Derating 1 2 3 4 5 6 7 8 IO, AVERAGE FORWARD CURRENT (A) Figure 6. Forward Power Dissipation http://onsemi.com 3 9 MBRS540T3G, NRVBS540T3G 1000 TJ, DERATED OPERATING TEMPERATURE (°C) TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) TJ = 25 °C 100 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) 35 40 125 RqJA = 12 °C/W 115 105 RqJA = 47 °C/W 95 RqJA = 81 °C/W 85 RqJA = 111 °C/W 75 RqJA = 136 °C/W 65 55 0 Figure 7. Capacitance 35 10 15 20 25 30 VR, DC REVERSE VOLTAGE (V) 5 40 45 Figure 8. Typical Operating Temperature Derating r(t), TRANSIENT THERMAL RESPONSE (C/W) 1000 100 D = 0.5 10 0.2 0.1 P(pk) 0.05 0.02 1 0.01 Test Type > min pad 1 oz RqJC = min pad 1 oz C/W t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 1 100 10 1000 t, TIME (s) r(t), TRANSIENT THERMAL RESPONSE (C/W) Figure 9. Thermal Response − MBRS540T3G, NRVBS540T3G on min pad 100 D = 0.5 0.2 10 0.1 P(pk) 0.05 1 0.02 0.01 0.1 0.00001 Test Type > min pad 1 oz RqJC = min pad 1 oz C/W t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.0001 0.001 0.01 0.1 1 10 t, TIME (s) Figure 10. Thermal Response − MBRS540T3G, NRVBS540T3G on 1” pad http://onsemi.com 4 100 1000 MBRS540T3G, NRVBS540T3G PACKAGE DIMENSIONS SMC CASE 403−03 ISSUE E HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. 4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03. E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 2.92 0.15 5.59 6.60 7.75 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 3.00 3.07 0.23 0.30 5.84 6.10 6.86 7.11 7.94 8.13 1.02 1.27 0.51 REF MIN 0.075 0.002 0.115 0.006 0.220 0.260 0.305 0.030 INCHES NOM 0.084 0.004 0.118 0.009 0.230 0.270 0.313 0.040 0.020 REF MAX 0.095 0.006 0.121 0.012 0.240 0.280 0.320 0.050 A L L1 c A1 SOLDERING FOOTPRINT* 4.343 0.171 3.810 0.150 2.794 0.110 SCALE 4:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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