Diode Semiconductor Korea EM513 --- EM518 VOLTAGE RANGE: 1600 --- 2000 V CURRENT: 1.0 A PLASTIC SILICON RECTIFIER FEATURES DO - 41 Molded case feature for auto insertion High current capability Low leakage current High surge capability High temperature soldering guaranteed: 250 /10sec/0.375" (9.5mm) lead length at 5 lbs tension MECHANICAL DATA Case:JEDEC DO -41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012ounces,0.34 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. EM513 EM516 EM518 UNITS Maximum recurrent peak reverse voltage V RRM 1600 1800 2000 V Maximum RMS voltage V RMS 1120 1260 1400 V Maximum DC blocking voltage VDC 1600 1800 2000 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 1.0 A IFSM 30.0 A VF 1.1 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 1.0 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA=100 IR 5.0 Typical junction capacitance (Note1) CJ 10 Typical thermal resistance (Note2) RθJA 50 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 Operating junction temperature range Storage temperature range A 50.0 NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 2. Thermal resistance f rom junction to ambient at 0.375"(9.5mm) lead length, P.C.board mounted pF ／Ｗ www.diode.kr Diode Semiconductor Korea EM513 --- EM518 0.8 0.6 0.4 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.2 0 0 25 50 75 100 125 150 FIG.2 -- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, AMPERES 1.0 AMPERES AVERAGE FORWARD CURRENT FIG.1 -- TYPICAL FORWARD CURRENT DERATING CURVE 175 20 10 4 1 .4 T J=25 Pulse Width=300μs .1 .04 .01 .6 AMBIENT TEMPERATURE, .8 1.0 1.2 1.4 1.5 INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.3 -- MAXIMUM NON-REPETITIVE FORWARD FIG.4 -- TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MICRO AMPERES 45 8.3ms Single Half Sine-Wave (JEDEC Method) 40 30 20 10 0 1 4 10 100 40 NUMBER OF CYCLES AT 60Hz 10 4 TJ=100℃ 1 .4 .1 .04 TJ=25℃ .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, % FIG.5 -- TYPICAL JUNCTION CAPACITANCE 200 JUNCTION CAPACITANCE, pF CURRENT, AMPERES PEAK FORWARD SURGE SURGE CURRENT 100 40 10 TJ=25℃ 4 1 .1 .4 1 4 10 40 100 REVERSE VOLTAGE, VOLTS www.diode.kr