Diodes SMD Type Low-leakage double diode BAW156 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Plastic SMD package 0.4 3 Features Switching time: typ. 0.8 1 s 0.55 Low leakage current: typ. 3 pA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Continuous reverse voltage:max. 75 V +0.05 0.1-0.01 +0.1 0.97-0.1 Repetitive peak reverse voltage:max. 85 V 0-0.1 +0.1 0.38-0.1 Repetitive peak forward current:max. 500 mA. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Repetitive peak reverse voltage Symbol Conditions Min Max Unit VRRM 85 V Continuous reverse voltage VR 75 V Continuous forward current IF Repetitive peak forward current single diode loaded;note 1 160 double diode loaded; note 1 140 IFRM 500 square wave; Tj = 25 Non-repetitive peak forward current mA prior to surge s 4 t = 1 ms 1 t=1 IFSM mA t=1s A 0.5 Total power dissipation Ptot Storage temperature Tstg Junction temperature Tj 150 thermal resistance from junction to tie-point Rth j-t p 360 K/W thermal resistance from junction to ambient Rth j-a 500 K/W Tamb 25 250 ; note 1 -65 mW +150 Note 1. Device mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Diodes SMD Type BAW156 Electrical Characteristics Ta = 25 Parameter Symbol Forward voltage Conditions VF Typ IF = 1 mA 900 IF = 10 mA 1000 IF = 50 mA 1100 IF = 150 mA Reverse current V R = 75 V 5 V R = 75 V; T j = 150 3 80 f = 1 MHz; V R = 0 3 Cd trr Reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Marking Marking 2 JZp www.kexin.com.cn ;measured at IR = 1 mA; Unit mV 1250 0.003 IR Diode capacitance Max 0.8 nA pF 3 s