STMicroelectronics BUL903EDFP High voltage fast-switching npn power transistor Datasheet

BUL903EDFP
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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INTEGRATED ANTISATURATION AND
PROTECTION NETWORK
INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
ARCING TEST SELF PROTECTED
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
3
1
2
TO-220FP
APPLICATIONS
FOUR LAMP ELECTRONIC BALLAST FOR
120 V MAINS IN PUSH-PULL
CONFIGURATION
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DESCRIPTION
The BUL903EDFP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
The device has been designed to operate without
baker clamp and transil protection. This enables
saving from 2 up to 10 components in the
application.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V CES
V CEO
V EBO
IC
I CM
IB
I BM
P tot
Visol
T stg
Tj
Parameter
Collector-Emitter Voltage (V BE = 0)
Collector-Emitter Voltage (I B = 0)
Emitter-Base Voltage (I C = 0)
Collector Current
Collector Peak Current (t p <5 ms)
Base Current
Base Peak Current (t p <5 ms)
Total Dissipation at Tc = 25 o C
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
September 2003
Value
900
400
7
5
8
2
4
35
1500
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
V
o
o
C
C
1/7
BUL903EDFP
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
3.57
62.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Max.
Unit
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 900 V
100
µA
I EBO
Emitter Cut-off
Current (I C = 0)
V EB = 7 V
100
µA
Collector-Emitter
Breakdown Voltage
(V BE = 0)
I C = 100 µA
V (BR)CES
Parameter
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
Test Conditions
I C = 10 mA
L = 25 mH
Min.
Typ.
900
V
400
V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 0.5 A
IC = 1 A
IC = 2 A
I B = 50 mA
I B = 0.15 A
I B = 0.4 A
0.5
1
1.5
V
V
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 0.5 A
IC = 1 A
IC = 2 A
I B = 50 mA
I B = 0.15 A
I B = 0.4 A
1
1.1
1.2
V
V
V
DC Current Gain
IC
IC
IC
IC
V CE =
V CE =
V CE =
V CE =
h FE ∗
10 mA
0.25 A
0.5 A
2.5 A
5
5
5
5
V
V
V
V
RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
Fall Time
V CC = 125 V
I B1 = 50 mA
t p = 300 µs
(see figure 1)
I C = 0.7 A
I B2 = 0.4 A
E ar
Repetitive Avalanche
Energy
V CC = 50V
V BE = -5 V
(see figure 2)
C = 1.8 nF
L = 2 mH
VF
Parallel Diode Forward I F = 2 A
Voltage
td
tr
ts
tf
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/7
=
=
=
=
20
40
28
8
70
60
16
0.2
1
0.8
0.25
6
µs
µs
µs
µs
mJ
1.2
V
BUL903EDFP
Safe Operating Area
Derating Curve
Output Characteristics
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
3/7
BUL903EDFP
Base Emitter Saturation Voltage
Switching Times Resistive Load
Switching Times Inductive Load
Reverse Biased SOA
4/7
BUL903EDFP
Figure 1: Resistive Load Switching Test Circuit
Figure 2 : Energy Rating Test Circuit
Figure 3: Inductive Load Switching Test Circuit
5/7
BUL903EDFP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
A
4.4
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
¯
F
F1
L7
1 2 3
L2
6/7
L4
BUL903EDFP
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
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