IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P PolarTM Power MOSFETs VDSS ID25 RDS(on) = 1200V = 1.4A Ω ≤ 13Ω TO-252 (IXTY) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 1.4 3.0 A A IA TC = 25°C 1.4 A EAS TC = 25°C 150 mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 86 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 0.35 2.50 3.00 g g g TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 G S D (Tab) TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 1200 VGS(th) VDS = VGS, ID = 100μA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V V 4.5 V ±50 nA 5 μA 300 μA TJ = 125°C RDS(on) High Power Density Easy to Mount Space Savings VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 © 2012 IXYS CORPORATION, All Rights Reserved 10.5 13 Ω Applications DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies AC and DC Motor Drives Discharge Circiuts in Lasers, Spark Igniters, RF Generators High Voltage Pulse Power Applications DS99871B(06/12) IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 0.8 1.3 S 666 pF 36 pF 7.6 pF 25 ns VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 27 ns 78 ns RG = 25Ω (External) 29 ns 24.8 nC 4.4 nC 12.8 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 1.45 °C/W RthJC RthCS TO-252 AA Outline TO-220 0.50 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 1.4 A ISM Repetitive, Pulse Width Limited by TJM 4.2 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 1.4A, VGS = 0V,-di/dt = 100A/μs VR = 100V 900 ns 1. Gate 2. Drain 3. Source 4. Drain Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC TO-220 Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. On through-hole package, RDS(on) Kelvin test contact location must be 5mm or less from the package body. TO-263 Outline 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Fig. 2. Output Characteristics @ T J = 125ºC Fig. 1. Output Characteristics @ T J = 25ºC 1.4 2.2 VGS = 10V 7V 2 VGS = 10V 6V 1.2 1.8 1 6V 1.4 ID - Amperes ID - Amperes 1.6 1.2 1 0.8 5V 0.6 0.8 0.4 0.6 0.4 0.2 6V 0.2 0 0 0 5 10 15 20 25 30 0 5 10 15 VDS - Volts 20 25 30 35 40 VDS - Volts Fig. 3. RDS(on) Normalized to ID = 0.7A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 0.7A Value vs. Drain Current 3.2 2.6 2.4 VGS = 10V 2.8 VGS = 10V TJ = 125ºC R DS(on) - Normalized R DS(on) - Normalized 2.2 2.4 I D = 1.4A 2.0 1.6 I D = 0.7A 2.0 1.8 1.6 1.4 TJ = 25ºC 1.2 1.2 0.8 1.0 0.8 0.4 -50 -25 0 25 50 75 100 125 0 150 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 ID - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 2 1.6 1.4 1.5 ID - Amperes ID - Amperes 1.2 1.0 0.8 0.6 0.4 1 TJ = 125ºC 25ºC - 40ºC 0.5 0.2 0.0 0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2012 IXYS CORPORATION, All Rights Reserved 100 125 150 3.0 3.5 4.0 4.5 5.0 VGS - Volts 5.5 6.0 6.5 IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 2.8 3.5 TJ = - 40ºC 2.4 3 2.5 IS - Amperes g f s - Siemens 2 25ºC 1.6 125ºC 1.2 2 1.5 TJ = 125ºC 0.8 1 TJ = 25ºC 0.4 0.5 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.4 0.45 0.5 0.55 0.6 ID - Amperes Fig. 9. Gate Charge 0.7 0.75 0.8 0.85 0.9 Fig. 10. Capacitance 10 10,000 VDS = 600V 9 f = 1 MHz Capacitance - PicoFarads I D = 0.7A 8 I G = 10mA 7 VGS - Volts 0.65 VSD - Volts 6 5 4 3 Ciss 1,000 100 Coss 10 2 Crss 1 1 0 0 4 8 12 16 20 0 24 5 10 QG - NanoCoulombs 15 20 25 30 35 40 VDS - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 10 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXT_1R4N120P (2C) 4-01-08-A