Data Sheet DUAL OPERATIONAL AMPLIFIERS AZ4558 General Description Features The AZ4558 consists of two high performance operational amplifiers. The IC features high gain, high input resistance, excellent channel separation, wide range of operating voltage and internal frequency compensation. It can work with ±18V maximum power supply voltage. · · · · · · Internal Frequency Compensation Large Signal Voltage Gain with 100 dB Typical High Input Resistance with 5MΩ Typical Maximum Power Supply Voltages: ±18V Compatible with NJM 4558 Low Input Voltage Noise with 10nV/ Hz at 1KHz The AZ4558 is specifically suitable for applications in differential-in, differential-out as well as in potentialmetric amplifiers and where gain and phase matched channels are mandatory. Applications · · The AZ4558 is available in DIP-8 and SOIC-8 package. SOIC-8 Audio AC-3 Decoder System Audio Amplifier DIP-8 Figure 1. Package Types of AZ4558 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 1 Data Sheet DUAL OPERATIONAL AMPLIFIERS AZ4558 Pin Configuration M Package/P Package (SOIC-8/DIP-8) OUTPUT 1 1 8 VCC INPUT 1- 2 7 OUTPUT 2 INPUT 1+ 3 6 INPUT 2- VEE 4 5 INPUT 2+ Top View Figure 2. Pin Configuration of AZ4558 Functional Block Diagram 3.1 KΩ VCC 150 Ω - Input 25 Ω + Input Output 25 Ω 10pF 87 pF 7.1 KΩ 7.1 KΩ 480 Ω 36 KΩ 4.2 KΩ VEE Figure 3. Representative Schematic Diagram of AZ4558 (Each Amplifier) Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 2 Data Sheet DUAL OPERATIONAL AMPLIFIERS AZ4558 Ordering Information AZ4558 - Circuit Type E1: Lead Free Blank: Tin Lead Package TR: Tape and Reel Blank: Tube M: SOIC-8 P: DIP-8 Package Temperature Range SOIC-8 -40 to 85oC DIP-8 -40 to 85oC Part Number Tin Lead Marking ID Lead Free Tin Lead Lead Free Packing Type AZ4558M AZ4558M-E1 4558M 4558M-E1 Tube AZ4558MTR AZ4558MTR-E1 4558M 4558M-E1 Tape & Reel AZ4558P AZ4558P-E1 AZ4558P AZ4558P-E1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 3 Data Sheet DUAL OPERATIONAL AMPLIFIERS AZ4558 Absolute Maximum Ratings (Note 1) Parameter Symbol Value VCC +20 VEE -20 Input Voltage VI ±15 V Differential Input Voltage VID ±30 V TJ 150 TSTG TL Power Supply Voltage Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering 10s) Power Dissipation PD Unit V o C -65 to 150 o C 260 o C DIP-8 800 SOIC-8 500 mW Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Min Max Unit Supply Voltage ±4 ±18 V Operating Temperature Range -40 85 Jul. 2006 Rev. 1. 2 o C BCD Semiconductor Manufacturing Limited 4 Data Sheet DUAL OPERATIONAL AMPLIFIERS AZ4558 Electrical Characteristics Operating Conditions: VCC=+15V, VEE=-15V, TA=25oC unless otherwise specified. Parameter Conditions Min Input Offset Voltage Typ Max Unit 0.5 6 mV Input Bias Current VCM=0V 25 250 nA Input Offset Current VCM=0V 2.5 100 nA Input Resistance 0.3 5 MΩ Supply Current RL=∞, Over full temperature Large Signal Voltage Gain RL≥2Κ, VO=±10V 85 100 dB Common Mode Rejection Ratio RS≤10kΩ 80 92 dB Power Supply Rejection Ratio RS≤10kΩ 80 95 dB Output Current 3.3 5.7 mA range Source V+=1V, V-=0V, VO=2V 50 mA Sink V+=0V, V-=1V, VO=2V 50 mA Output Voltage Swing RL≥2KΩ ±10 ±13 RL≥10KΩ ±12 ±14 V V/µS Slew Rate RL=2KΩ, CL=100pF 1.3 Equivalent Input Noise Voltage Density RS=50Ω, f=1KHz 10 Gain Bandwidth Product RL=2KΩ, f=10KHz 3.4 Jul. 2006 Rev. 1. 2 nV Hz MHz BCD Semiconductor Manufacturing Limited 5 Data Sheet DUAL OPERATIONAL AMPLIFIERS AZ4558 Typical Performance Characteristics 30 VCC=15V, VEE=-15V 100 25 Maximum Voltage Swing (V) Open Loop Voltage Gain (dB) 120 o RL=2KΩ, TA=25 C 80 60 40 o RL=2K, TA=25 C 15 10 5 20 0 0 2x10 VCC=15V, VEE=-15V, 20 0 1 10 2 10 3 4 10 10 5 10 1 10 6 10 2 3 10 10 Frequency (HZ) Figure 4. Open Loop Voltage Gain vs. Frequency 6 10 3 10 Equivalent Input Noise Voltage Density 0.5 (nV/(HZ) ) Maximum Voltage Swing (V) 5 10 Figure 5. Maximum Output Voltage Swing vs. Frequency 30 28 4 10 Frequency (HZ) o VCC=15V, VEE=-15V, TA=25 C 26 24 22 20 18 16 14 VCC=15V, VEE=-15V o RS=50Ω, TA=25 C 2 10 1 10 12 0 10 0.1K 1K 0 10 10K Load Resistance (Ω) 1 2 10 10 3 10 Frequency (HZ) Figure 6. Maximum Output Voltage Swing vs. Load Resistance Figure 7. Equivalent Input Noise Voltage Density vs. Frequency Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 6 Data Sheet DUAL OPERATIONAL AMPLIFIERS AZ4558 Typical Performance Characteristics (Continued) 1.2 80 1.1 VCC=15V VEE=-15V Input Bias Current (nA) Input Offset Voltage (mV) 1.0 VCC=15V VEE=-15V 70 0.9 0.8 0.7 0.6 0.5 60 50 40 30 20 0.4 10 0.3 0.2 -25 0 25 50 75 100 0 125 -25 0 25 50 75 100 125 o o Ambient Temperature ( C) Ambient Temperature ( C) Figure 8. Input Offset Voltage vs. Temperature Figure 9. Input Bias Current vs. Temperature Typical Application VO 10µF 6.2K 20K 8 6 7 5 + AZ4558 + 2 1 4 3 D2 15K 20K 20K 20K 10K D1 VIN Figure 10. Application of AZ4558 in an AC/DC Converter Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 7 Data Sheet DUAL OPERATIONAL AMPLIFIERS AZ4558 Mechanical Dimensions DIP-8 Unit: mm(inch) 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6° 5° 6° 3.200(0.126) 3.600(0.142) 3.710(0.146) 4.310(0.170) 4° 4° 0.510(0.020)MIN 3.000(0.118) 3.600(0.142) 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) 0.254(0.010)TYP 2.540(0.100) TYP 0.360(0.014) 0.560(0.022) 0.130(0.005)MIN 6.200(0.244) 6.600(0.260) R0.750(0.030) Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 8 Data Sheet DUAL OPERATIONAL AMPLIFIERS AZ4558 Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) 4.800(0.189) 5.000(0.197) 7° 0.320(0.013) 1.350(0.053) 1.750(0.069) 8° 8° 7° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 0.300(0.012) R0.150(0.006) 0.100(0.004) φ 0.800(0.031) 0.200(0.008) 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 1° 5° 0.330(0.013) 0.510(0.020) 0.900(0.035) R0.150(0.006) 0.190(0.007) 0.250(0.010) Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 9 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. 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