BCD AZ4558MTR Dual operational amplifier Datasheet

Data Sheet
DUAL OPERATIONAL AMPLIFIERS
AZ4558
General Description
Features
The AZ4558 consists of two high performance operational amplifiers. The IC features high gain, high input
resistance, excellent channel separation, wide range of
operating voltage and internal frequency compensation. It can work with ±18V maximum power supply
voltage.
·
·
·
·
·
·
Internal Frequency Compensation
Large Signal Voltage Gain with 100 dB Typical
High Input Resistance with 5MΩ Typical
Maximum Power Supply Voltages: ±18V
Compatible with NJM 4558
Low Input Voltage Noise with 10nV/ Hz
at 1KHz
The AZ4558 is specifically suitable for applications in
differential-in, differential-out as well as in potentialmetric amplifiers and where gain and phase matched
channels are mandatory.
Applications
·
·
The AZ4558 is available in DIP-8 and SOIC-8 package.
SOIC-8
Audio AC-3 Decoder System
Audio Amplifier
DIP-8
Figure 1. Package Types of AZ4558
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL OPERATIONAL AMPLIFIERS
AZ4558
Pin Configuration
M Package/P Package
(SOIC-8/DIP-8)
OUTPUT 1
1
8
VCC
INPUT 1-
2
7
OUTPUT 2
INPUT 1+
3
6
INPUT 2-
VEE
4
5
INPUT 2+
Top View
Figure 2. Pin Configuration of AZ4558
Functional Block Diagram
3.1 KΩ
VCC
150 Ω
- Input
25 Ω
+ Input
Output
25 Ω
10pF
87
pF
7.1
KΩ
7.1
KΩ
480 Ω
36 KΩ
4.2 KΩ
VEE
Figure 3. Representative Schematic Diagram of AZ4558 (Each Amplifier)
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL OPERATIONAL AMPLIFIERS
AZ4558
Ordering Information
AZ4558
-
Circuit Type
E1: Lead Free
Blank: Tin Lead
Package
TR: Tape and Reel
Blank: Tube
M: SOIC-8
P: DIP-8
Package
Temperature
Range
SOIC-8
-40 to 85oC
DIP-8
-40 to
85oC
Part Number
Tin Lead
Marking ID
Lead Free
Tin Lead
Lead Free
Packing Type
AZ4558M
AZ4558M-E1
4558M
4558M-E1
Tube
AZ4558MTR
AZ4558MTR-E1
4558M
4558M-E1
Tape & Reel
AZ4558P
AZ4558P-E1
AZ4558P
AZ4558P-E1
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL OPERATIONAL AMPLIFIERS
AZ4558
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
VCC
+20
VEE
-20
Input Voltage
VI
±15
V
Differential Input Voltage
VID
±30
V
TJ
150
TSTG
TL
Power Supply Voltage
Operating Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering 10s)
Power Dissipation
PD
Unit
V
o
C
-65 to 150
o
C
260
o
C
DIP-8
800
SOIC-8
500
mW
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Min
Max
Unit
Supply Voltage
±4
±18
V
Operating Temperature Range
-40
85
Jul. 2006 Rev. 1. 2
o
C
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL OPERATIONAL AMPLIFIERS
AZ4558
Electrical Characteristics
Operating Conditions: VCC=+15V, VEE=-15V, TA=25oC unless otherwise specified.
Parameter
Conditions
Min
Input Offset Voltage
Typ
Max
Unit
0.5
6
mV
Input Bias Current
VCM=0V
25
250
nA
Input Offset Current
VCM=0V
2.5
100
nA
Input Resistance
0.3
5
MΩ
Supply Current
RL=∞, Over full temperature
Large Signal Voltage Gain
RL≥2Κ, VO=±10V
85
100
dB
Common Mode Rejection Ratio
RS≤10kΩ
80
92
dB
Power Supply Rejection Ratio
RS≤10kΩ
80
95
dB
Output Current
3.3
5.7
mA
range
Source
V+=1V, V-=0V, VO=2V
50
mA
Sink
V+=0V, V-=1V, VO=2V
50
mA
Output Voltage Swing
RL≥2KΩ
±10
±13
RL≥10KΩ
±12
±14
V
V/µS
Slew Rate
RL=2KΩ, CL=100pF
1.3
Equivalent Input Noise Voltage Density
RS=50Ω, f=1KHz
10
Gain Bandwidth Product
RL=2KΩ, f=10KHz
3.4
Jul. 2006 Rev. 1. 2
nV
Hz
MHz
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL OPERATIONAL AMPLIFIERS
AZ4558
Typical Performance Characteristics
30
VCC=15V, VEE=-15V
100
25
Maximum Voltage Swing (V)
Open Loop Voltage Gain (dB)
120
o
RL=2KΩ, TA=25 C
80
60
40
o
RL=2K, TA=25 C
15
10
5
20
0
0
2x10
VCC=15V, VEE=-15V,
20
0
1
10
2
10
3
4
10
10
5
10
1
10
6
10
2
3
10
10
Frequency (HZ)
Figure 4. Open Loop Voltage Gain vs. Frequency
6
10
3
10
Equivalent Input Noise Voltage Density
0.5
(nV/(HZ) )
Maximum Voltage Swing (V)
5
10
Figure 5. Maximum Output Voltage Swing vs. Frequency
30
28
4
10
Frequency (HZ)
o
VCC=15V, VEE=-15V, TA=25 C
26
24
22
20
18
16
14
VCC=15V, VEE=-15V
o
RS=50Ω, TA=25 C
2
10
1
10
12
0
10
0.1K
1K
0
10
10K
Load Resistance (Ω)
1
2
10
10
3
10
Frequency (HZ)
Figure 6. Maximum Output Voltage Swing
vs. Load Resistance
Figure 7. Equivalent Input Noise Voltage Density
vs. Frequency
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL OPERATIONAL AMPLIFIERS
AZ4558
Typical Performance Characteristics (Continued)
1.2
80
1.1
VCC=15V
VEE=-15V
Input Bias Current (nA)
Input Offset Voltage (mV)
1.0
VCC=15V
VEE=-15V
70
0.9
0.8
0.7
0.6
0.5
60
50
40
30
20
0.4
10
0.3
0.2
-25
0
25
50
75
100
0
125
-25
0
25
50
75
100
125
o
o
Ambient Temperature ( C)
Ambient Temperature ( C)
Figure 8. Input Offset Voltage vs. Temperature
Figure 9. Input Bias Current vs. Temperature
Typical Application
VO
10µF
6.2K
20K
8
6
7
5
+
AZ4558
+
2
1
4
3
D2
15K
20K
20K
20K
10K
D1
VIN
Figure 10. Application of AZ4558 in an AC/DC Converter
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL OPERATIONAL AMPLIFIERS
AZ4558
Mechanical Dimensions
DIP-8
Unit: mm(inch)
0.700(0.028)
7.620(0.300)TYP
1.524(0.060) TYP
6°
5°
6°
3.200(0.126)
3.600(0.142)
3.710(0.146)
4.310(0.170) 4°
4°
0.510(0.020)MIN
3.000(0.118)
3.600(0.142)
0.204(0.008)
0.360(0.014)
8.200(0.323)
9.400(0.370)
0.254(0.010)TYP
2.540(0.100) TYP
0.360(0.014)
0.560(0.022)
0.130(0.005)MIN
6.200(0.244)
6.600(0.260)
R0.750(0.030)
Φ3.000(0.118)
Depth
0.100(0.004)
0.200(0.008)
9.000(0.354)
9.400(0.370)
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
DUAL OPERATIONAL AMPLIFIERS
AZ4558
Mechanical Dimensions (Continued)
SOIC-8
Unit: mm(inch)
4.800(0.189)
5.000(0.197)
7°
0.320(0.013)
1.350(0.053)
1.750(0.069)
8°
8°
7°
0.675(0.027)
0.725(0.029)
D
5.800(0.228)
1.270(0.050)
6.200(0.244)
TYP
D
20:1
0.300(0.012)
R0.150(0.006)
0.100(0.004)
φ 0.800(0.031)
0.200(0.008)
0°
8°
1.000(0.039)
3.800(0.150)
4.000(0.157)
1°
5°
0.330(0.013)
0.510(0.020)
0.900(0.035)
R0.150(0.006)
0.190(0.007)
0.250(0.010)
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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