TI1 LME49713HA/NOPB High performance, high fidelity current feedback audio operational amplifier Datasheet

LME49713
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SNAS386F – SEPTEMBER 2007 – REVISED MARCH 2013
LME49713 High Performance, High Fidelity Current Feedback
Audio Operational Amplifier
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FEATURES
1
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2
Easily Drives 150Ω Loads
Optimized for Superior Audio Signal Fidelity
Output Short Circuit Protection
100dB (Typ) PSRR and 88dB (Typ) CMRR
SOIC High-Performance and TO-99 Packages
APPLICATIONS
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Ultra High Quality Audio Amplification
High-Fidelity Preamplifiers
High-Fidelity Multimedia
State-of-the-Art Phono Pre Amps
High-Performance Professional Audio
High-Fidelity Equalization and Crossover
Networks
High-Performance Line Drivers
High-Performance Line Receivers
High-Fidelity Active Filters
KEY SPECIFICATIONS
•
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Power Supply Voltage Range: ±5V to ±18V
THD+N, f = 1kHz (AV = 1, RL = 100Ω,
VOUT = 3VRMS): 0.0006% (typ)
THD+N, f = 1kHz (AV = 1, RL = 600Ω,
VOUT = 1.4VRMS): 0.00036% (typ)
Input Noise Density: 1.9nV/√Hz (typ)
Slew Rate: ±1900V/μs (typ)
Bandwidth (AV = –1, RL= 2kΩ, RF = 1.2kΩ):
132 MHz (typ)
Input Bias Current: 1.8μA (typ)
Input Offset Voltage: 0.05mV (typ)
DESCRIPTION
The LME49713 is an ultra-low distortion, low noise,
ultra high slew rate current feedback operational
amplifier optimized and fully specified for high
performance, high fidelity applications. Combining
advanced leading-edge process technology with
state-of-the-art circuit design, the LME49713 current
feedback operational amplifier delivers superior signal
amplification for outstanding performance. Operating
on a wide supply range of ±5V to ±18V, the
LME49713 combines extremely low voltage noise
density (1.9nV/√Hz) with very low THD+N (0.00036%)
to easily satisfy the most demanding applications. To
ensure that the most challenging loads are driven
without compromise, the LME49713 has a high slew
rate of ±1900V/μs and an output current capability of
±100mA. Further, dynamic range is maximized by an
output stage that drives 150Ω loads to within 2.9V of
either power supply voltage.
The LME49713's outstanding CMRR (88dB), PSRR
(100dB), and VOS (0.05mV) give the amplifier
excellent operational amplifier DC performance.
The LME49713 is available in an 8-lead narrow body
SOIC and an 8-lead TO-99. Demonstration boards
are available.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007–2013, Texas Instruments Incorporated
LME49713
SNAS386F – SEPTEMBER 2007 – REVISED MARCH 2013
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CONNECTION DIAGRAMS
Figure 1. 8-Lead SOIC
(D Package)
NC
8
+
NC
1
INVERTING
INPUT
7
2
NON-INVERTING
INPUT
V
6
3
5
OUTPUT
NC
4
V
-
Figure 2. 8-Lead TO-99
(LMC Package)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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ABSOLUTE MAXIMUM RATINGS (1) (2) (3)
Power Supply Voltage
(VS = V+ - V-)
38V
−65°C to 150°C
Storage Temperature
Input Voltage
(V-) - 0.7V to (V+) + 0.7V
Output Short Circuit (4)
Continuous
Power Dissipation
Internally Limited
ESD Rating (5)
2000V
ESD Rating (6)
200V
Junction Temperature
150°C
Thermal Resistance
θJA (MA)
145°C/W
Temperature Range
TMIN ≤ TA ≤ TMAX
–40°C ≤ TJ ≤ 70°C
Supply Voltage Range
±5.0V ≤ VS ≤ ± 18V
(1)
(2)
(3)
(4)
(5)
(6)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All
voltages are measured with respect to the ground pin, unless otherwise specified.
The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and
are not ensured.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
Amplifier output connected to GND, any number of amplifiers within a package.
Human body model, applicable std. JESD22-A114C.
Machine model, applicable std. JESD22-A115-A.
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LME49713
SNAS386F – SEPTEMBER 2007 – REVISED MARCH 2013
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ELECTRICAL CHARACTERISTICS (1) (2)
The following specifications apply for the VS = ±15V, RL = 2kΩ, RSOURCE = 10Ω, fIN = 1kHz, and TJ = 25°C, unless otherwise
specified.
Symbol
Parameter
Conditions
LME49713
Typical (3)
Limit (4)
Units
(Limits)
0.00071
0.00045
% (max)
% (max)
THD+N
Total Harmonic Distortion + Noise
AV = 1, VOUT = 3VRMS, RF = 1.2kΩ
RL = 100Ω, VOUT = 3VRMS
RL = 600Ω, VOUT = 1.4VRMS
0.0006
0.00036
IMD
Intermodulation Distortion
AV = 1, VIN = 3VRMS
Two-tone, 60Hz & 7kHz 4:1
0.00009
%
BW
Bandwidth
AV = –1, RF = 1.2kΩ
132
MHz
SR
Slew Rate
VO = 20VP-P, AV = –1
±1900
V/μs
FPBW
Full Power Bandwidth
VOUT = 20VP-P, AV = –1
30
MHz
Settling time
AV = –1, 10V step,
0.1% error range
50
ns
Equivalent Input Noise Voltage
fBW = 20Hz to 20kHz
0.26
0.6
Equivalent Input Noise Density
f = 1kHz
f = 10Hz
1.9
11.5
4.0
in
Current Noise Density
f = 1kHz
f = 10Hz
16
160
VOS
Input Offset Voltage
ΔVOS/ΔTemp
Average Input Offset Voltage Drift vs
Temperature
–40°C ≤ TA ≤ 85°C
PSRR
Average Input Offset Voltage Shift vs
Power Supply Voltage
VSUPPLY = ±5V to ±15V
IB
Input Bias Current
ΔIOS/ΔTemp
IOS
ts
en
±0.05
nV/√Hz
(max)
pA/√Hz
±1.0
mV (max)
μV/°C
0.29
(5)
μVRMS
(max)
100
95
dB (min)
VCM = 0V
1.8
6
μA (max)
Input Bias Current Drift vs
Temperature
–40°C ≤ TA ≤ 85°C
Inverting input
Non-inverting input
4.5
4.7
Input Offset Current
VCM = 0V
1.3
5
μA (max)
±13.5
(V+) – 2.0
(V-) + 2.0
V (min)
V (min)
86
dB (min)
nA/°C
nA/°C
VIN-CM
Common-Mode Input Voltage Range
CMRR
Common-Mode Rejection
–10V<Vcm<10V
88
Non-inverting-input Input Impedance
–10V<Vcm<10V
1.2
MΩ
Inverting-input Input Impedance
–10V<Vcm<10V
58
Ω
ZT
Transimpedance
VOUT = ±10V
RL = 200Ω
RL = ∞
4.2
4.7
2.0
2.65
MΩ (min)
MΩ (min)
VOUTMAX
Maximum Output Voltage Swing
RL = 150Ω
±11.1
±10.3
V (min)
RL = 600Ω
±11.6
±11.4
V (min)
IOUT
Output Current
RL = 150Ω, VS = ±18V
±100
±91
mA (min)
IOUT-CC
Instantaneous Short Circuit Current
ROUT
Output Resistance
IS
Total Quiescent Current
ZIN
(1)
(2)
(3)
(4)
(5)
4
±140
mA
fIN = 5MHz, Open-Loop
10
Ω
IOUT = 0mA
8.5
10
mA (max)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All
voltages are measured with respect to the ground pin, unless otherwise specified.
The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and
are not ensured.
Typical values represent most likely parametric norms at TA = +25ºC, and at the Recommended Operation Conditions at the time of
product characterization and are not ensured.
Datasheet min/max specification limits are specified by test or statistical analysis.
PSRR is measured as follows: VOS is measured at two supply voltages, ±5V and ±15V. PSRR = | 20log(ΔVOS/ΔVS) |.
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TYPICAL PERFORMANCE CHARACTERISTICS
THD FFT vs Frequency
VO = 3VRMS, RL = 100Ω, VS = ±15V, AV = 1
-100
-100
-105
-105
-110
-110
-115
-115
FFT AMPLITUDE (dB)
FFT AMPLITUDE (dB)
THD FFT vs Frequency
VO = 3VRMS, RL = 1kΩ, VS = ±15V, AV = 1
-120
-125
-130
-135
-140
-145
-120
-125
-130
-135
-140
-145
-150
-150
-155
-155
-160
0
2
4
6
8
-160
0
10 12 14 16 18 20
2
4
10 12 14 16 18 20
Figure 4.
THD FFT vs Frequency
VO = 3VRMS, RL = 600Ω, VS = ±15V, AV = 1
THD FFT vs Frequency
VO1 = 1.4VRMS, RL = 1kΩ, VS = ±15V, AV = 1
-100
-100
-105
-105
-110
-110
-115
FFT AMPLITUDE (dB)
FFT AMPLITUDE (dB)
8
Figure 3.
-120
-125
-130
-135
-140
-145
-115
-120
-125
-130
-135
-140
-145
-150
-150
-155
-155
-160
0
2
4
6
8
-160
10 12 14 16 18 20
0
2
4
FREQUENCY (kHz)
6
8
10 12 14 16 18 20
FREQUENCY (kHz)
Figure 5.
Figure 6.
THD FFT vs Frequency
VO1 = 1.4VRMS, RL = 100Ω, VS = ±15V, AV = 1
THD FFT vs Frequency
AV =1. 4VRMS, RL = 600Ω, VS = ±15V, AV = 1
-100
-100
-105
-105
-110
-110
-115
-115
FFT AMPLITUDE (dB)
FFT AMPLITUDE (dB)
6
FREQUENCY (kHz)
FREQUENCY (kHz)
-120
-125
-130
-135
-140
-145
-120
-125
-130
-135
-140
-145
-150
-150
-155
-155
-160
0
2
4
6
8
10 12 14 16 18 20
-160
FREQUENCY (kHz)
0
2
4
6
8
10 12 14 16 18 20
FREQUENCY (kHz)
Figure 7.
Figure 8.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
THD vs Frequency
VO = 3VRMS, RL = 100Ω, SOIC
THD vs Frequency
VO = 3VRMS, RL = 600Ω, SOIC
0.01
THD+N (%)
THD+N (%)
0.01
0.001
0.0001
20
200
2k
FREQUENCY (Hz)
0.001
0.0001
20
20k
200
2k
FREQUENCY (Hz)
Figure 9.
Figure 10.
THD vs Frequency
VO = 3VRMS, RL = 100Ω
THD vs Output Voltage
VO = 3VRMS, RL = 600Ω
1
20k
10
1
THD+N (%)
THD (%)
0.1
0.01
0.1
0.01
0.001
0.001
0.0001
20
200
2k
20k
0.0001
1m
10m
100m
1
10 15
OUTPUT VOLTAGE (V)
FREQUENCY (Hz)
Figure 11.
Figure 12.
THD vs RF
Output Voltage vs Supply Voltage
AV = 1, RL = 600Ω
20
0.016
OUTPUT VOLTAGE (V)
0.014
THD+N (%)
0.012
0.010
0.008
0.006
y = 2E-07x + 0.0001
0.004
15
10
5
0.002
0
0
20k
40k
60k
80k
RF (:)
0
5
10
15
20
POWER SUPPLY (V)
Figure 13.
6
0
Figure 14.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Output Voltage vs Supply Voltage
AV = 1, RL = open
Supply Current (ICC) vs Power Supply
RL = open
20
12
SUPPLY CURRENT (mA)
OUTPUT VOLTAGE (V)
10
15
10
5
8
6
4
2
0
0
5
10
15
0
20
5 6 7 8 9 10 11 12 13 14 15 16 17 18
POWER SUPPLY (V)
POWER SUPPLY (V)
Figure 15.
Figure 16.
Supply Current (IEE) vs Power Supply
RL = open
Gain vs Frequency
VS = ±15V, G = –1
0
3
2
SUPPLY CURRENT (mA)
-2
1
GAIN (dB)
-4
-6
-8
0
-1
-2
32 MHz RF=3 k:
55 MHz RF=2 k:
-3
-10
-4
-12
5 6 7 8 9 10 11 12 13 14 15 16 17 18
132 MHz RF=1.2 k:
214 MHz RF=0.8 k:
-5
1E+5
POWER SUPPLY (V)
1E+8
Figure 17.
Figure 18.
Gain vs Frequency
VS = ±15V, G = –2
Gain vs Frequency
VS = ±15V, G = –5
16
8
15
7
1E+9
14
GAIN (dB)
6
GAIN (dB)
1E+7
FREQUENCY (Hz)
9
5
4
3
31 MHz RF=3 k:
2
52 MHz RF=2 k:
1
1E+6
111 MHz RF=1.2 k:
1E+6
1E+7
12
11
29 MHz RF=3 k:
46 MHz RF=2 k:
10
9
209 MHz RF=0.8 k:
0
1E+5
13
1E+8
1E+9
84 MHz RF=1.2 k:
126 MHz RF=0.8 k:
8
1E+5
FREQUENCY (Hz)
1E+6
1E+7
1E+8
1E+9
FREQUENCY (Hz)
Figure 19.
Figure 20.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Gain vs Frequency
VS = ±15V, G = –10
Gain vs Frequency
RF = 800Ω, VS = ±15V
22
21
19
21
15
13
19
GAIN (dB)
GAIN (dB)
20
18
17
16
15
82 MHz (Av) = -10
17
9
7
27 MHz RF=3 k:
5
41 MHz RF=2 k:
3
65 MHz RF=1.2 k:
1
82 MHz RF=0.8 k:
-1
14
1E+5
1E+6
1E+7
1E+8
126 MHz (Av) = -5
11
209 MHz (Av) = -2
214 MHz (Av) = -1
-3
1E+5
1E+9
1E+6
FREQUENCY (Hz)
21
19
1E+8
Figure 21.
Figure 22.
Gain vs Frequency
RF = 1.2kΩ, VS = ±15V
Gain vs Frequency
RF = 2kΩ, VS = ±15V
21
19
65 MHz (Av) = -10
1E+9
41 MHz (Av) = -10
17
17
15
15
13
13
84 MHz (Av) = -5
GAIN (dB)
GAIN (dB)
1E+7
FREQUENCY (Hz)
11
9
7
5
9
7
5
111 MHz (Av) = -2
46 MHz (Av) = -5
11
52 MHz (Av) = -2
3
3
1
1
-1
-1
132 MHz (Av) = -1
-3
1E+5
1E+6
1E+7
1E+8
55 MHz (Av) = -1
-3
1E+5
1E+6
1E+7
1E+9
21
19
1E+8
1E+9
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 23.
Figure 24.
Gain vs Frequency
RF = 3kΩ, VS = ±15V
CMRR vs Frequency
VS= ±15V
+0
27 MHz (Av) = -10
-10
17
-20
15
-30
29 MHz (Av) = -5
CMRR (dB)
GAIN (dB)
13
11
9
7
5
31 MHz (Av) = -2
-50
-60
-70
3
-80
1
-1
-40
-90
32 MHz (Av) = -1
-3
1E+5
1E+6
1E+7
1E+8
1E+9
-100
20
FREQUENCY (Hz)
Figure 25.
8
200
2k
FREQUENCY (Hz)
20k
Figure 26.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PSRR vs Frequency
VS= ±15V, VRIPPLE = 200mVP-P
Current Noise vs Frequency
VS= ±15V
-60
1000
CURRENT NOISE (pA/rt.Hz)
-65
PSRR (dB)
-70
-75
-80
-85
100
10
-90
-95
1
10
100
1k
10k
FREQUENCY (Hz)
100k
1
1M
1
100
1k
10k
FREQUENCY (Hz)
Figure 27.
Figure 28.
Equivalent Voltage Noise vs Frequency
VS= ±15V
Slew Rate vs Output Voltage
VS= ±15V
100k
2500
100
2000
SLEW RATE (V/Ps)
VOLTAGE NOISE (nV/rt.Hz)
10
10
1500
1000
500
1
1
0
10
100
1k
10k
FREQUENCY (Hz)
100k
0
5
10
15
20
25
VOUT (VP-P)
Figure 29.
Figure 30.
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APPLICATION INFORMATION
GENERAL AMPLIFIER FUNCTION
Voltage feedback amplifiers have a small-signal bandwidth that is a function of the closed-loop gain. Conversely,
the LME49713 current feedback amplifier features a small-signal bandwidth that is relatively independent of the
closed-loop gain. This is shown in Figure 31 where the LME49713’s gain is –1, –2, –5, and –10. Like all current
feedback amplifiers, the LME49713’s closed-loop bandwidth is a function of the feedback resistance value.
Therefore, Rs must be varied to select the desired closed-loop gain.
POWER SUPPLY BYPASSING AND LAYOUT CONSIDERATIONS
Properly placed and correctly valued supply bypassing is essential for optimized high-speed amplifier operation.
The supply bypassing must maintain a wideband, low-impedance capacitive connection between the amplifier’s
supply pin and ground. This helps preserve high speed signal and fast transient fidelity. The bypassing is easily
accomplished using a parallel combination of a 10μF tantalum and a 0.1μF ceramic capacitors for each power
supply pin. The bypass capacitors should be placed as close to the amplifier power supply pins as possible.
FEEDBACK RESISTOR SELECTION (Rf)
The value of the Rf, is also a dominant factor in compensating the LME49713. For general applications, the
LME49713 will maintain specified performance with an 1.2kΩ feedback resistor. Although this value will provide
good results for most applications, it may be advantageous to adjust this value slightly for best pulse response
optimized for the desired bandwidth. In addition to reducing bandwidth, increasing the feedback resistor value
also reduces overshoot in the time domain response.
21
19
65 MHz (Av) = -10
17
15
GAIN (dB)
13
84 MHz (Av) = -5
11
9
7
5
111 MHz (Av) = -2
3
1
-1
132 MHz (Av) = -1
-3
1E+5
1E+6
1E+7
1E+8
1E+9
FREQUENCY (Hz)
Figure 31. Bandwidth as a Function of Gain
SLEW RATE CONSIDERATIONS
A current feedback amplifier’s slew rate characteristics are different than that of voltage feedback amplifiers. A
voltage feedback amplifier’s slew rate limiting or non-linear amplifier behavior is dominated by the finite
availability of the first stage tail current charging the second stage voltage amplifier’s compensation capacitor.
Conversely, a current feedback amplifier’s slew rate is not constant. Transient current at the inverting input
determines slew rate for both inverting and non-inverting gains. The non-inverting configuration slew rate is also
determined by input stage limitations. Accordingly, variations of slew rates occur for different circuit topologies.
DRIVING CAPACITIVE LOADS
The LME49713 can drive significantly higher capacitive loads than many current feedback amplifiers. Although
the LME49713 can directly drive as much as 100pF without oscillating, the resulting response will be a function
of the feedback resistor value.
10
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CAPACITIVE FEEDBACK
It is quite common to place a small lead-compensation capacitor in parallel with a voltage feedback amplifier’s
feedback resistance, Rf. This compensation reduces the amplifier’s peaking in the frequency domain and damps
the transient response. Whereas this yields the expected results when used with voltage feedback amplifiers, this
technique must not be used with current feedback amplifiers. The dynamic impedance of capacitors in the
feedback loop reduces the amplifier’s stability. Instead, reduced peaking in the frequency response and
bandwidth limiting can be accomplished by adding an RC circuit to the amplifier’s input.
REVISION HISTORY
Revision
Date
1.0
09/26/07
Description
Initial release.
1.1
09/28/07
Added the Typical Performance curves.
1.2
10/03/07
Input Limit values.
1.3
10/29/07
Edited the Specification table, typical performance curve, and text edits.
1.4
01/29/08
Added more curves in the Typical Performance section.
1.5
07/24/08
Added the Metal Can package.
1.6
08/20/08
Text edits (updated some of the curves' titles).
1.7
08/22/08
Text edits.
1.8
02/08/10
Input changes on typical and limits in the EC table.
1.9
04/23/10
Input Typical and Limit edits on THD+N and IOUT in the EC table.
2.0
06/02/10
Input text edits on the first page.
F
3/28/2013
Changed layout of National Data Sheet to TI format.
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PACKAGE OPTION ADDENDUM
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16-Oct-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LME49713HA/NOPB
ACTIVE
TO-99
LMC
8
20
Green (RoHS
& no Sb/Br)
POST-PLATE
Level-1-NA-UNLIM
-40 to 85
LME49713MA/NOPB
LIFEBUY
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
L49713
MA
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
16-Oct-2015
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
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