DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055ELE, NP80N055KLE NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP80N055ELE-E1-AY Note1, 2 NP80N055ELE-E2-AY Note1, 2 NP80N055KLE-E1-AY Note1 NP80N055KLE-E2-AY Note1 NP80N055CLE-S12-AZ Note1, 2 NP80N055DLE-S12-AY Note1, 2 NP80N055MLE-S18-AY Note1 NP80N055NLE-S18-AY Note1 LEAD PLATING PACKING PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g Sn-Ag-Cu Pure Sn (Tin) TO-220 (MP-25) typ. 1.9 g Tube 50 p/tube Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g (TO-220) FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) (TO-262) • Low input capacitance Ciss = 2900 pF TYP. • Built-in gate protection diode (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14097EJ6V0DS00 (6th edition) Date Published October 2007 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2002, 2007 NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V ID(DC) ±80 A ID(pulse) ±200 A Total Power Dissipation (TC = 25°C) PT 120 W Total Power Dissipation (TA = 25°C) PT 1.8 W Channel Temperature Tch 175 °C Drain Current (DC) (TC = 25°C) Drain Current (Pulse) Note1 Note2 Tstg −55 to +175 °C Single Avalanche Current Note3 IAS 45/30/10 A Single Avalanche Energy Note3 EAS 2.0/90/100 mJ Storage Temperature Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 μs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω, VGS = 20→0 V (see Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 1.25 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W 2 Data Sheet D14097EJ6V0DS NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 55 V, VGS = 0 V 10 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 μA Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 40 A 15 40 Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 40 A 8.4 11 mΩ RDS(on)2 VGS = 5 V, ID = 40 A 10.3 13 mΩ RDS(on)3 VGS = 4.5 V, ID = 40 A 11.3 15 mΩ Input Capacitance Ciss VDS = 25 V, 2900 4400 pF Output Capacitance Coss VGS = 0 V, 380 570 pF Reverse Transfer Capacitance Crss f = 1 MHz 170 310 pF Turn-on Delay Time td(on) VDD = 28 V, ID = 40 A, 22 48 ns Rise Time tr VGS = 10 V, 10 25 ns Turn-off Delay Time td(off) RG = 1 Ω 62 120 ns Fall Time tf 11 27 ns Total Gate Charge QG1 VDD = 44 V, VGS = 10 V, ID = 80 A 50 75 nC QG2 VDD = 44 V, 26 39 nC Gate to Source Charge QGS VGS = 5 V, 12 nC Gate to Drain Charge QGD ID = 80 A 15 nC Body Diode Forward Voltage VF(S-D) IF = 80 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 80 A, VGS = 0 V, 50 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 100 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω S VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS 90% VDS VGS 0 VDS 10% 0 10% Wave Form VDS ID τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD Data Sheet D14097EJ6V0DS 3 NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE TYPICAL CHARACTERISTICS (TA = 25°C) Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 100 80 60 40 20 0 0 25 50 75 120 100 80 60 40 20 0 100 125 150 175 200 25 0 TC - Case Temperature - °C 75 100 125 150 175 200 TC - Case Temperature - °C Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR Figure3. FORWARD BIAS SAFE OPERATING AREA 120 ID(pulse) d ite im ) )L 0V 1 (on S RDVGS = ( 100 ID(DC) 1m s Po DC Lim wer ite Dis sip d ati PW 10 0μ s EAS - Single Avalanche Energy - mJ 1000 ID - Drain Current - A 50 =1 0μ s on 10 1 TC = 25°C Single Pulse 0.1 0.1 1 10 VDS - Drain to Source Voltage - V 100 100 mJ 90 mJ 80 IAS = 10 A 30 A 45 A 60 40 20 2.0 mJ 0 25 50 100 75 100 125 150 175 Starting Tch - Starting Channel Temperature - °C Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 100 Rth(ch-A) = 83.3°C/W 10 Rth(ch-C) = 1.25°C/W 1 0.1 Single Pulse 0.01 10 μ 100 μ 1m 10 m 100 m 1 PW - Pulse Width - s 4 Data Sheet D14097EJ6V0DS 10 100 1000 NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE Figure6. FORWARD TRANSFER CHARACTERISTICS Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 200 Pulsed 10 ID - Drain Current - A ID - Drain Current - A 100 Pulsed TA = −50°C 25°C 75°C 150°C 175°C 1 0.1 VGS =10 V 160 5V 120 4.5 V 80 40 0.01 1 2 3 5 4 0 6 0 0.1 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 30 VGS = 4.5 V 5V 10 V 20 10 0 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ TA = 175°C 75°C 25°C −50°C VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S 10 0.01 0.01 5 4 VDS - Drain to Source Voltage - V Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = 10V Pulsed 1 3 2 1 VGS - Gate to Source Voltage - V Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 40 30 20 ID = 40 A 10 0 0 2 4 6 8 10 12 14 16 18 VGS - Gate to Source Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 3.0 VDS = VGS ID = 250 μA 2.5 2.0 1.5 1.0 0.5 0 −50 0 50 100 150 Tch - Channel Temperature - °C ID - Drain Current - A Data Sheet D14097EJ6V0DS 5 NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE 20 VGS = 4.5 V 5V 10 V 12 8 4 ID = 40 A 0 −50 50 0 100 Pulsed 100 VGS = 10 V 0V 10 1 0.1 0 150 VF(S-D) - Source to Drain Voltage - V Tch - Channel Temperature - °C Figure15. SWITCHING CHARACTERISTICS Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V f = 1 MHz Ciss 1000 Coss Crss 100 10 0.1 1 10 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 100 tf 100 td(off) td(on) 10 tr VDD = 28 V VGS = 10 V 1 RG = 1 Ω 0.1 trr - Reverse Recovery Time - ns di/dt = 100 A/μs VGS = 0 V 100 10 80 16 70 14 10 100 12 60 VGS VDD = 44 V 28 V 11 V 50 40 8 6 4 20 VDS 10 2 ID = 80 A 0 10 20 30 40 50 60 QG - Gate Charge - nC IF - Diode Forward Current - A 6 10 30 0 1 100 Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V Figure16. REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1 0.1 10 1 ID - Drain Current - A VDS - Drain to Source Voltage - V 1000 1.5 1.0 0.5 Data Sheet D14097EJ6V0DS 70 80 0 VGS - Gate to Source Voltage - V 16 1000 IF - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 24 Pulsed NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE PACKAGE DRAWINGS (Unit: mm) Note 1.3 ± 0.2 10.0 ± 0.3 No plating 7.88 MIN. 4 2 3 1.4 ± 0.2 0.7 ± 0.2 2.54 TYP. 9.15 ± 0.3 8.0 TYP. 8.5 ± 0.2 1 5.7 ± 0.4 1.0 ± 0.5 4 4.45 ± 0.2 0.025 to 0.25 P. .5R 0 TY R 0.8 2.54 TYP. P. TY 0.5 ± 0.2 0.75 ± 0.2 0.5 ± 2.8 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 1.Gate 2.Drain 2.5 3.Source 15.5 MAX. 5.9 MIN. 4 1 0.75 ± 0.1 2.54 TYP. 1.3 ± 0.2 12.7 MIN. 6.0 MAX. 1 2 3 0.5 ± 0.2 2.8 ± 0.2 0.75 ± 0.3 2.54 TYP. 2 3 1.0 ± 0.5 10 TYP. Note 4.8 MAX. 1.3 ± 0.2 8.5 ± 0.2 1.3 ± 0.2 4.Fin (Drain) 12.7 MIN. 4.8 MAX. φ 3.6 ± 0.2 10.0 TYP. 1.3 ± 0.2 3 4)TO-262 (MP-25 Fin Cut) 4 8ο 0.25 Note 10.6 MAX. 0.2 0 to 2.54 3)TO-220 (MP-25) 1.3 ± 0.2 2.54 ± 0.25 4.8 MAX. 10 TYP. 1.35 ± 0.3 2)TO-263 (MP-25ZK) 15.25 ± 0.5 1)TO-263 (MP-25ZJ) 3.0 ± 0.3 <R> 0.5 ± 0.2 2.8 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note Not for new design Data Sheet D14097EJ6V0DS 7 NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE 0.8 ± 0.1 0.5 ± 0.2 2.5 ± 0.2 2.54 TYP. 1.3 ± 0.2 10.1 ± 0.3 1 2 3 4.45 ± 0.2 1.27 ± 0.2 3.1 ± 0.3 4 8.9 ± 0.2 15.9 MAX. 1.27 ± 0.2 2.54 TYP. 10.0 ± 0.2 13.7 ± 0.3 3 13.7 ± 0.3 1 2 4.45 ± 0.2 1.3 ± 0.2 3.1 ± 0.2 4 φ 3.8 ± 0.2 6.3 ± 0.3 2.8 ± 0.3 10.0 ± 0.2 1.2 ± 0.3 6)TO-262 (MP-25SK) 5)TO-220 (MP-25K) 0.8 ± 0.1 0.5 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 2.5 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Gate Protection Diode Remark Body Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 8 Data Sheet D14097EJ6V0DS NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE <R> TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Draw-out side <R> Reel side MARKING INFORMATION NEC 80N055 LE <R> Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Soldering Conditions Infrared reflow Maximum temperature (Package's surface temperature): 260°C or below MP-25ZJ, MP-25ZK Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Recommended Condition Symbol IR60-00-3 Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Wave soldering Maximum temperature (Solder temperature): 260°C or below MP-25, MP-25K, MP-25SK, Time: 10 seconds or less MP-25 Fin Cut Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 350°C or below MP-25ZJ, MP-25ZK, Time (per side of the device): 3 seconds or less MP-25K, MP-25SK Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 300°C or below MP-25, MP-25 Fin Cut Time (per side of the device): 3 seconds or less THDWS P350 P300 Maximum chlorine content of rosin flux: 0.2% (wt.) or less Caution Do not use different soldering methods together (except for partial heating). Data Sheet D14097EJ6V0DS 9 NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE • The information in this document is current as of October, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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