CEP15P15/CEB15P15 CEF15P15 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP15P15 -150V 0.24Ω -15A -10V CEB15P15 -150V 0.24Ω -15A -10V CEF15P15 -150V 0.24Ω -15A d -10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G D G D S G S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter D S S CEF SERIES TO-220F Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 Drain-Source Voltage VDS -150 Gate-Source Voltage VGS ±20 Drain Current-Continuous @ TC = 25 C ID @ TC = 100 C Drain Current-Pulsed IDM a Maximum Power Dissipation @ TC = 25 C e PD - Derate above 25 C TO-220F Units V V -15 -15 d A -9 -9d A - 60 - 60 96 34 W 0.27 W/ C 0.77 d A Single Pulsed Avalanche Energy h EAS 250 mJ Single Pulsed Avalanche Current h IAS 10 A TJ,Tstg -55 to 150 C Symbol Limit Units Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case RθJC 1.3 3.7 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 2. 2012.Nov http://www.cetsemi.com Electrical Characteristics Parameter CEP15P15/CEB15P15 CEF15P15 Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA -150 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -150, VGS = 0V -1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA -4 V 0.24 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA Static Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -7.5A 0.2 f=1MHz,open Drain 5.3 Ω 1245 pF 175 pF 35 pF 18 ns 8 ns 63 ns Rg Gate input resistance Dynamic Characteristics -2 c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -75V, ID = -7.5A, VGS = -10V, RGEN = 10Ω Turn-Off Fall Time tf 14 ns Total Gate Charge Qg 31 nC Gate-Source Charge Qgs 5 nC Gate-Drain Charge Qgd 12 nC VDS = -120V, ID = -7.5A, VGS = 10V Drain-Source Diode Characteristics and Maximun Ratings IS Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = -15A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . h.L = 5mH, IAS =10A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C 2 -15 A -1.2 V CEP15P15/CEB15P15 CEF15P15 30 25 C -VGS=10,8,7,6,V 10.0 -ID, Drain Current (A) -ID, Drain Current (A) 12.5 -VGS=5V 7.5 5.0 2.5 -VGS=4V 0 0.0 2 4 6 8 0 2 4 6 8 10 12 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 900 600 Coss 300 Crss 0 5 10 15 20 25 2.4 2.0 ID=-7.5A VGS=-10V 1.6 1.2 0.8 0.4 0.0 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage -55 C -VGS, Gate-to-Source Voltage (V) Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ=125 C 6 0 1200 1.2 12 -VDS, Drain-to-Source Voltage (V) 1500 1.3 18 10 1800 0 24 -25 0 25 50 75 100 125 150 VGS=0V 10 2 10 1 10 0 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS= -120V ID= -7.5A 8 -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CEP15P15/CEB15P15 CEF15P15 6 4 2 0 0 6 12 18 24 30 RDS(ON)Limit 100us 10 1 1ms 10ms DC 10 10 36 2 0 TC=25 C TJ=150 C Single Pulse -1 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 0.02 0.01 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -2 10 -4 t2 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 3