INCHANGE Semiconductor isc Triacs BTA24-800BWRG FEATURES ·With TO-220AB insulated package ·Suitables for general purpose where high surge current capability is required.Application such as phase control and tatic switching on inductive or resistive load. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak off-state voltage 800 V IT(RMS) RMS on-state current (full sine wave)Tj=75℃ 25 A Non-repetitive peak on-state current 250 A 125 ℃ -40~150 ℃ ITSM Tj Tstg tp=20ms Operating junction temperature Storage temperature Rth(j-c) Thermal resistance, junction to case 1.7 ℃/W Rth(j-a) Thermal resistance, junction to ambient 60 ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM, Tj=25℃ VR=VRRM, Tj=125℃ VD=VDRM,Tj=25℃ VD=VDRM, Tj=125℃ Gate trigger current Ⅱ VD=12V; RL= 33Ω 0.005 3.0 mA 0.005 3.0 mA 50 mA 50 Ⅲ IH UNIT 50 Ⅰ IGT MAX Holding current IGT= 0.5A, Gate Open 75 mA VGT Gate trigger voltage all quadrant VD=12V; RL= 33Ω 1.3 V VTM On-state voltage IT= 35A; tp= 380μs 1.55 V isc website： www.iscsemi.com isc & iscsemi is registered trademark