HTSEMI MM3ZB36 Silicon planar zener diode Datasheet

MM3Z2B4~MM3ZB75
Silicon Planar Zener Diodes
PINNING
Features
• Power Dissipation: 300 mW
• Zener Voltage Tolerance: ± 2%
PIN
DESCRIPTION
1
Cathode
2
Anode
2
1
Top View
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
Ptot
300
mW
Tj
150
O
Tstg
- 55 to + 150
O
Symbol
Max.
RθJA
417
VF
0.9
C
C
Characteristics at Ta = 25 OC
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at IF = 10 mA
Unit
C/W
O
V
１
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
MM3Z2B4~MM3ZB75
Type
MM3Z2B4
MM3Z2B7
MM3Z3B0
MM3Z3B3
MM3Z3B6
MM3Z3B9
MM3Z4B3
MM3Z4B7
MM3Z5B1
MM3Z5B6
MM3Z6B2
MM3Z6B8
MM3Z7B5
MM3Z8B2
MM3Z9B1
MM3ZB10
MM3ZB11
MM3ZB12
MM3ZB13
MM3ZB15
MM3ZB16
MM3ZB18
MM3ZB20
MM3ZB22
MM3ZB24
MM3ZB27
MM3ZB30
MM3ZB33
MM3ZB36
MM3ZB39
MM3ZB43
MM3ZB47
MM3ZB51
MM3ZB56
MM3ZB62
MM3ZB68
MM3ZB75
1)
Marking
Code
DN
DP
DR
DX
DY
DZ
Z0
EB
EC
ED
EE
EF
EH
EJ
EK
EM
EN
EP
ER
EX
EY
EZ
FA
FB
FC
FD
FE
FF
FH
FJ
XJ
XK
XM
XN
XP
XR
XX
Zener Voltage Range 1)
Vznom
V
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
lZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
for
Dynamic Impedance
VZT
V
2.352…2.448
2.646…2.754
2.94…3.06
3.234…3.366
3.528…3.672
3.822…3.978
4.214…4.386
4.606…4.794
4.998…5.202
5.488…5.712
6.076…6.324
6.664…6.936
7.35…7.65
8.036…8.364
8.918…9.282
9.8…10.2
10.78…11.22
11.76…12.24
12.74…13.26
14.7…15.3
15.68…16.32
17.64…18.36
19.6…20.4
21.56…22.44
23.52…24.48
26.46…27.54
29.4…30.6
32.34…33.66
35.28…36.72
38.22…39.78
42.14…43.86
46.06…47.94
49.98…52.02
54.88…57.12
60.76…63.24
66.64…69.36
73.5…76.5
ZZT (Max.)
Ω
100
110
120
130
130
130
130
130
130
80
50
30
30
30
30
30
30
35
35
40
40
45
50
55
60
70
80
80
90
100
130
150
180
180
200
250
300
at IZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
Reverse Leakage Current
IR (Max.)
μA
120
120
50
20
10
5
5
2
2
1
1
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2
2
2
1
1
0.2
0.2
0.2
at VR
V
1
1
1
1
1
1
1
1
1.5
2.5
3
3.5
4
5
6
7
8
9
10
11
12
13
15
17
19
21
23
25
27
30
33
36
39
43
47
52
57
VZ is tested with pulses (20 ms).
Power Dissipation: Ptot (mW)
300
200
100
0
0
25
150
100
Ambient Temperature: Ta ( C)
O
Derating Curve
２
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
MM3Z2B4~MM3ZB75
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
A
c
HE
A
D
E
bp
UNIT
A
mm
1.10
0.80
bp
0.40
0.25
C
0.15
0.10
D
1.80
1.60
E
HE
1.35
1.15
2.80
2.30
３
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５