Zetex BCW68HR Pnp silicon planar medium power transistor Datasheet

SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
BCW68
ISSUE 5 - MARCH 2001
PARTMARKING DETAILS –
BCW68F –
BCW68G –
BCW68H –
DF
DG
DH
BCW68FR –
BCW68GR –
BCW68HR –
7T
5T
7N
E
C
B
COMPLEMENTARY TYPES – BCW66
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
Collector-Emitter Voltage
V CES
-60
V
V CEO
-45
Emitter-Base Voltage
V
V EBO
-5
V
Peak Pulse Current(10ms)
I CM
-1000
mA
Continuous Collector Current
IC
-800
mA
Base Current
IB
-100
mA
Power Dissipation at T amb=25°C
P tot
330
mW
Operating and Storage Temperature Range
T j:T stg
-55 to +150
°C
TBA
BCW68
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V (BR)CEO
-45
V (BR)CES
-60
Emitter-Base Breakdown Voltage
V (BR)EBO
-5
Collector-Emitter
Cut-off Current
I CES
Emitter-Base Cut-Off Current
I EBO
Collector-Emitter Saturation
Voltage
V CE(sat)
Base-Emitter Saturation Voltage
V BE(sat)
Static
Forward
Current
Transfer
BCW68F
h FE
100
35
170
250
IC=-100mA, VCE =-1V*
IC=-500mA, VCE =-2V*
BCW68G
h FE
160
60
250
400
IC=-100mA, VCE =-1V*
IC=-500mA, VCE =-2V*
BCW68H
h FE
250
100
350
630
IC=-100mA, VCE =-1V*
IC=-500mA, VCE =-2V*
Transition Frequency
fT
100
Output Capacitance
C obo
Input Capacitance
C ibo
Noise Figure
N
Switching times:
Turn-On Time
Turn-Off Time
t on
t off
V
IC=-10 µ A
V
I EBO =-10 µ A
-20
-10
nA
µA
V CES =-45V
VCES =-45V, Tamb=150°C
-20
nA
V EBO =-4V
-0.3
V
V
IC=-100mA, IB = -10mA
IC= -500mA, IB =-50mA*
-2
V
IC=-500mA,IB=-50mA*
-0.7
12
2
MHz
I C =-20mA, V CE =-10V
f = 100MHz
18
pF
V CB =-10V, f =1MHz
80
pF
V EB =-0.5V, f =1MHz
10
dB
I C= -0.2mA, V CE =- 5V
R G =1K Ω, f=1KH
∆ f=200Hz
100
400
ns
ns
I C=-150mA
I B1=- I B2 =-15mA
R L=150 Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions.
TBA
I CEO=-10mA
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