Not Recommended for New Design Please Use FMMT491 BSR41 BSR43 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ✪ ISSUE 3 – FEBRUARY 1996 COMPLEMENTARY TYPES – BSR43 - BSR33 C BSR41 - BSR31 PARTMARKING DETAIL – BSR43 - AR4 BSR41 - AR2 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BSR41 BSR43 UNIT Collector-Base Voltage VCBO 70 90 V Collector-Emitter Voltage VCEO 60 80 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Base Current IB 100 mA Power Dissipation at Tamb =25°C PTOT Operating and Storage Temperature Range Tj:Tstg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base BSR43 Breakdown Voltage BSR41 V(BR)CBO 90 70 MAX. V IC=100µA Collector-Emitter BSR43 Breakdown Voltage BSR41 V(BR)CEO 80 60 V IC=10mA 5 * Emitter-Base Breakdown Voltage V(BR)EBO V IE=10µA Collector Cut-Off Current ICBO 100 50 nA µA VCB=60V VCB=60V, Tamb =125°C Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.5 V V IC =150mA, IB =15mA IC =500mA, IB =50mA Base-Emitter Saturation Voltage VBE(sat) 1.0 1.2 V V IC =150mA, IB =15mA IC =500mA, IB =50mA Static Forward Current Transfer Ratio hFE 30 100 50 IC =100µA, VCE =5V IC =100mA, VCE =5V IC =500mA, VCE =5V 300 Collector Capacitance Cc 12 pF Emitter Capacitance Ce 90 pF VEB =0.5V, f=1MHz Transition Frequency fT MHz IC=50mA, VCE=10V f =35MHz VCC =20V, IC =100mA IB1 =IB2 =5mA 100 Turn-On Time Ton 250 ns Turn-Off Time Toff 1000 ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMT493 datasheet. 3 - 68 VCB =10V, f=1MHz