MMIS70R1K4P Datasheet MMIS70R1K4P 700V 1.4Ω N-channel MOSFET Description MMIS70R1K4P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss. Key Parameters Package & Internal Circuit Parameter Value Unit VDS @ Tj,max 750 V RDS(on),max 1.4 Ω VTH,typ 3 V ID 3.2 A Qg,typ 11 nC D G G D S S Features Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free Applications PFC Power Supply Stages Switching Applications Adapter Motor Control DC – DC Converters Ordering Information Order Code Marking Temp. Range Package Packing RoHS Status MMIS70R1K4PTH 70R1K4P -55 ~ 150℃ TO-251-VS Tube Halogen Free Jan. 2016 Revision 2.0 1 MagnaChip Semiconductor Ltd. MMIS70R1K4P Datasheet Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Symbol Rating Unit Drain – Source voltage VDSS 700 V Gate – Source voltage VGSS ±30 V 3.2 A TC=25℃ 2 A TC=100℃ Continuous drain current ID Pulsed drain current(1) IDM 9.6 A Power dissipation PD 33 W Single - pulse avalanche energy EAS 26 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness(2) dv/dt 15 V/ns Tstg -55 ~150 ℃ Tj 150 ℃ Storage temperature Maximum operating junction temperature 1) 2) Note Pulse width tP limited by Tj,max ISD ≤ ID, VDS peak ≤ V(BR)DSS Thermal Characteristics Symbol Value Unit Thermal resistance, junction-case max Rthjc 3.8 ℃/W Thermal resistance, junction-ambient max Rthja 62.5 ℃/W Parameter Jan. 2016 Revision 2.0 2 MagnaChip Semiconductor Ltd. MMIS70R1K4P Datasheet Static Characteristics (Tc=25℃ unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Drain – Source Breakdown voltage V(BR)DSS 700 - - V VGS = 0V, ID=0.25mA VGS(th) 2 3 4 V VDS = VGS, ID=0.25mA Zero Gate Voltage Drain Current IDSS - - 1 μA VDS = 700V, VGS = 0V Gate Leakage Current IGSS - - 100 nA VGS = ±30V, RDS(ON) - 1.26 1.4 Ω VGS = 10V, ID = 1.0A Gate Threshold Voltage Drain-Source On State Resistance Test Condition VDS =0V Dynamic Characteristics (Tc=25℃ unless otherwise specified) Parameter Symbol Min. Typ. Max. Input Capacitance Ciss - 312 - Output Capacitance Coss - 240 - Unit pF Reverse Transfer Capacitance Crss - 15.4 - Effective Output Capacitance Energy Related (3) Co(er) - 13.5 - Turn On Delay Time td(on) - 9 - tr - 20 - Rise Time Turn Off Delay Time td(off) - 33 - tf - 21 - Total Gate Charge Qg - 11 - Gate – Source Charge Qgs - 2.2 - Gate – Drain Charge Qgd - 5.1 - Gate Resistance RG - 7.6 - Fall Time Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V to 560V, VGS = 0V,f = 1.0MHz ns VGS = 10V, RG = 25Ω, VDS = 350V, ID = 3.2A nC VGS = 10V, VDS =560V, ID = 3.2A Ω VGS = 0V, f = 1.0MHz 3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS Jan. 2016 Revision 2.0 3 MagnaChip Semiconductor Ltd. MMIS70R1K4P Datasheet Reverse Diode Characteristics (Tc=25℃ unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Continuous Diode Forward Current ISD - - 3.2 A Diode Forward Voltage VSD - - 1.4 V Reverse Recovery Time trr - 240 - ns Reverse Recovery Charge Qrr - 1.2 - μC Reverse Recovery Current Irrm - 9.6 - A Jan. 2016 Revision 2.0 4 Test Condition ISD = 3.2 A, VGS = 0 V ISD = 3.2 A di/dt = 100 A/μs VDD = 100 V MagnaChip Semiconductor Ltd. MMIS70R1K4P Datasheet Characteristic Graph Jan. 2016 Revision 2.0 5 MagnaChip Semiconductor Ltd. MMIS70R1K4P Datasheet Jan. 2016 Revision 2.0 6 MagnaChip Semiconductor Ltd. MMIS70R1K4P Datasheet Jan. 2016 Revision 2.0 7 MagnaChip Semiconductor Ltd. MMIS70R1K4P Datasheet Physical Dimension TO251-3L (IPAK-VSL) Dimensions are in millimeters, unless otherwise specified Jan. 2016 Revision 2.0 8 MagnaChip Semiconductor Ltd. MMIS70R1K4P Datasheet DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Jan. 2016 Revision 2.0 9 MagnaChip Semiconductor Ltd.