ON NRVBD1035CTL Switchmode schottky power rectifier Datasheet

NRVBD1035CTL
SWITCHMODE
Schottky Power Rectifier
DPAK Power Surface Mount Package
The NRVBD1035CTL employs the Schottky Barrier principle in a
large area metal−to−silicon power diode. State of the art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency
switching power supplies, free wheeling diode and polarity protection
diodes.
Features
• Highly Stable Oxide Passivated Junction
• Guardring for Stress Protection
• Matched Dual Die Construction −
•
•
•
•
•
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SCHOTTKY BARRIER
RECTIFIER
10 AMPERES
35 VOLTS
1
4
May be Paralleled for High Current Output
High dv/dt Capability
Short Heat Sink Tap Manufactured − Not Sheared
Very Low Forward Voltage Drop
Epoxy Meets UL 94 V−0 @ 0.125 in
This is a Pb−Free Device
3
4
1 2
3
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
DPAK
CASE 369C
MARKING DIAGRAM
YWW
B10
35CLG
Y
WW
B1035CL
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
June, 2011 − Rev. 0
1
Publication Order Number:
NRVBD1035CTL/D
NRVBD1035CTL
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 115°C)
Per Leg
Per Package
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 115°C)
Per Leg
Non−Repetitive Peak Surge Current
Per Package
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Storage / Operating Case Temperature
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated VR, TJ = 25°C)
Symbol
Value
Unit
VRRM
VRWM
VR
35
V
IO
5.0
10
A
IFRM
10
A
IFSM
50
A
Tstg, Tc
−55 to +150
°C
TJ
−55 to +150
°C
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
Per Leg
RqJC
3.0
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
Per Leg
RqJA
137
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
(See Figure 2)
IF = 5 Amps, TJ = 25°C
IF = 5 Amps, TJ = 100°C
IF = 10 Amps, TJ = 25°C
IF = 10 Amps, TJ = 100°C
Maximum Instantaneous Reverse Current (Note 3)
(See Figure 4)
(VR = 35 V, TJ = 25°C)
(VR = 35 V, TJ = 100°C)
(VR = 17.5 V, TJ = 25°C)
(VR = 17.5 V, TJ = 100°C)
Per Leg
Per Leg
VF
V
0.47
0.41
0.56
0.55
IR
mA
2.0
30
0.20
5.0
2. Rating applies when using minimum pad size, FR4 PC Board
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%
ORDERING INFORMATION
Device
NRVBD1035CTLT4G
Package
Shipping†
DPAK
(Pb−Free)
2500 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NRVBD1035CTL
I F, INSTANTANEOUS FORWARD CURRENT (AMPS)
I F, INSTANTANEOUS FORWARD CURRENT (AMPS)
TYPICAL CHARACTERISTICS
100
TJ = 125°C
10
TJ = 100°C
TJ = 25°C
TJ = - 40°C
1.0
0.1
0.10
0.30
0.50
0.70
0.90
1.10
100
TJ = 125°C
10
TJ = 25°C
1.0
TJ = 100°C
0.1
0.10
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Per Leg
I R , MAXIMUM REVERSE CURRENT (AMPS)
I R , REVERSE CURRENT (AMPS)
0.50
0.70
0.90
1.10
Figure 2. Maximum Forward Voltage Per Leg
1E+0
100E-3
1E+0
100E-3
TJ = 125°C
10E-3
1E-3
TJ = 100°C
100E-6
TJ = 25°C
0
10
20
VR, REVERSE VOLTAGE (VOLTS)
TJ = 125°C
10E-3
TJ = 100°C
1E-3
100E-6
10E-6
1E-6
0.30
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
30
35
Figure 3. Typical Reverse Current Per Leg
TJ = 25°C
10E-6
1E-6
0
10
20
VR, REVERSE VOLTAGE (VOLTS)
30
Figure 4. Maximum Reverse Current Per Leg
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3
35
PFO , AVERAGE POWER DISSIPATION (WATTS)
I O , AVERAGE FORWARD CURRENT (AMPS)
NRVBD1035CTL
8.0
dc
7.0
SQUARE WAVE
(50% DUTY CYCLE)
6.0
5.0
Ipk/Io = p
4.0
Ipk/Io = 5
3.0
Ipk/Io = 10
2.0
Ipk/Io = 20
1.0
freq = 20 kHz
0
0
20
40
60
80
120
100
4.0
SQUARE WAVE
(50% DUTY CYCLE)
3.5
3.0
Ipk/Io = p
2.5
Ipk/Io = 5
2.0
Ipk/Io = 10
1.5
Ipk/Io = 20
1.0
0.5
0
0
140
1.0
1000
C, CAPACITANCE (pF)
TJ = 25°C
100
10
10
15
3.0
4.0
5.0
6.0
7.0
8.0
Figure 6. Forward Power Dissipation Per Leg
TJ , DERATED OPERATING TEMPERATURE ( ° C)
Figure 5. Current Derating Per Leg
5
2.0
IO, AVERAGE FORWARD CURRENT (AMPS)
TL, LEAD TEMPERATURE (°C)
0
dc
20
125
RqJA = 2.43°C/W
115
RqJA = 25°C/W
105
RqJA = 48°C/W
95
RqJA = 67.5°C/W
85
RqJA = 84°C/W
75
65
0
25
5
10
15
20
25
30
35
VR, DC REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Operating Temperature
Derating Per Leg *
Figure 7. Capacitance Per Leg
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ = TJmax − r(t)(Pf + Pr) where
TJ may be calculated from the equation:
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
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4
r (t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
NRVBD1035CTL
1.0
50%(DUTY CYCLE)
20%
10%
0.1 5.0%
2.0%
1.0%
SINGLE PULSE
0.01
0.00001
Rtjl(t) = Rtjl • r(t)
0.0001
0.001
0.01
0.1
10
1.0
100
1000
t, TIME (s)
r (t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 9. Thermal Response Junction to Case (Per Leg)
1.0E+00
50% (DUTY CYCLE)
20%
1.0E-01
1.0E-02
10%
5.0%
2.0%
1.0%
1.0E-03
SINGLE PULSE
1.0E-04
0.00001
0.0001
Rtjl(t) = Rtjl • r(t)
0.001
0.01
0.1
1.0
10
t, TIME (s)
Figure 10. Thermal Response Junction to Ambient (Per Leg)
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5
100
1000
10000
NRVBD1035CTL
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NRVBD1035CTLD
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