Rohm BD52012HFV-E2 Unipolar detection hall ic Datasheet

Hall IC Series
Unipolar Detection
Hall ICs
BU52002GUL,BU52003GUL,BU52012HFV,BU52013HFV
No.10045EBT03
●Description
The unipolar Detection Hall IC detects only either the N pole or S pole. The output turns ON (active Low) upon detection.
It is most suitable for strictly unipole detection and when lower power consumption is desired.
●Features
1) unipolar detection
2) Micropower operation (small current using intermittent operation method)
3) Ultra-compact CSP4 package (BU52002GUL,BU52003GUL)
4) Small outline package (BU52012HFV,BU52013HFV)
5) Line up of supply voltage
For 1.8V Power supply voltage(BU52012HFV,BU52013HFV)
For 3.0V Power supply voltage (BU52002GUL,BU52003GUL)
6) High ESD resistance 8kV(HBM)
●Applications
Mobile phones, notebook computers, digital video camera, digital still camera, etc.
●Product Lineup
Product name
BU52002GUL
BU52003GUL
BU52012HFV
BU52013HFV
Supply voltage Operate point
(V)
(mT)
2.40~3.30
3.7※
2.40~3.30
-3.7※
1.65~3.30
3.0※
1.65~3.30
-3.0※
Hysteresis
(mT)
0.8
0.8
0.9
0.9
Period
(ms)
50
50
50
50
Supply current
(AVG.)(μA)
6.5
6.5
3.5
3.5
Output type
Package
CMOS
CMOS
CMOS
CMOS
VCSP50L1
VCSP50L1
HVSOF5
HVSOF5
※Plus is expressed on the S-pole; minus on the N-pole
●Absolute Maximum Ratings
BU52002GUL,BU52003GUL (Ta=25℃)
Parameters
Power Supply Voltage
Output Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Symbol
Limit
Unit
※1
VDD
IOUT
Pd
Topr
Tstg
-0.1~+4.5
±1
2
420※
-40~+85
-40~+125
V
mA
mW
℃
℃
※1. Not to exceed Pd
※2. Reduced by 4.20mW for each increase in Ta of 1℃ over 25℃(mounted on 50mm×58mm Glass-epoxy PCB)
BU52012HFV,BU52013HFV (Ta=25℃)
Parameters
Power Supply Voltage
Output Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Symbol
Limit
Unit
VDD
IOUT
Pd
Topr
Tstg
-0.1~+4.5※3
±0.5
536※4
-40~+85
-40~+125
V
mA
mW
℃
℃
※3. Not to exceed Pd
※4. Reduced by 5.36mW for each increase in Ta of 1℃ over 25℃(mounted on 70mm×70mm×1.6mm Glass-epoxy PCB)
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© 2010 ROHM Co., Ltd. All rights reserved.
1/13
2010.01 - Rev.B
Technical Note
BU52002GUL,BU52003GUL,BU52012HFV,BU52013HFV
●Magnetic, Electrical Characteristics
BU52002GUL (Unless otherwise specified, VDD=3.0V, Ta=25℃)
Parameters
Symbol
Min
Limit
Typ
Max
Unit
Conditions
Power Supply Voltage
VDD
2.4
3.0
3.3
V
Operate Point
BopS
-
3.7
5.5
mT
Release Point
BrpS
0.8
2.9
-
mT
Hysteresis
BhysS
-
0.8
-
mT
TP
-
50
100
ms
Output High Voltage
VOH
VDD-0.4
-
-
V
B<BrpS※5 , IOUT=-1.0mA
Output Low Voltage
VOL
-
-
0.4
V
BopS<B※5 , IOUT =+1.0mA
Supply Current
IDD(AVG)
-
6.5
9
μA
Average
Supply Current During Startup Time
IDD(EN)
-
4.7
-
mA
During Startup Time Value
Supply Current During Standby Time
IDD(DIS)
-
3.8
-
μA
During Standby Time Value
Period
※5. B = Magnetic flux density
1mT=10Gauss
Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor.
After applying power supply, it takes one cycle of period (TP) to become definite output. Radiation hardiness is not designed.
BU52003GUL (Unless otherwise specified, VDD=3.0V, Ta=25℃)
Limit
Parameters
Symbol
Min
Typ
Max
Power Supply Voltage
VDD
2.4
3.0
3.3
V
Operate Point
BopN
-5.5
-3.7
-
mT
Release Point
BrpN
-
-2.9
-0.8
mT
Hysteresis
BhysN
-
0.8
-
mT
TP
-
50
100
ms
Output High Voltage
VOH
VDD-0.4
-
-
V
BrpN<B※6 , IOUT=-1.0mA
Output Low Voltage
VOL
-
-
0.4
V
B<BopN※6 , IOUT =+1.0mA
Supply Current
IDD(AVG)
-
6.5
9
μA
Average
Supply Current During Startup Time
IDD(EN)
-
4.7
-
mA
During Startup Time Value
Supply Current During Standby Time
IDD(DIS)
-
3.8
-
μA
During Standby Time Value
Period
Unit
Conditions
※6. B = Magnetic flux density
1mT=10Gauss
Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor.
After applying power supply, it takes one cycle of period (TP) to become definite output. Radiation hardiness is not designed.
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© 2010 ROHM Co., Ltd. All rights reserved.
2/13
2010.01 - Rev.B
Technical Note
BU52002GUL,BU52003GUL,BU52012HFV,BU52013HFV
BU52012HFV (Unless otherwise specified, VDD=1.80V, Ta=25℃)
Limit
Parameters
Symbol
Min
Typ
Max
Unit
Conditions
Power Supply Voltage
VDD
1.65
1.80
3.30
V
Operate Point
BopS
-
3.0
5.0
mT
Release Point
BrpS
0.6
2.1
-
mT
Hysteresis
BhysS
-
0.9
-
mT
TP
-
50
100
ms
Output High Voltage
VOH
VDD-0.2
-
-
V
B<BrpS※6 , IOUT =-0.5mA
Output Low Voltage
VOL
-
-
0.2
V
BopS<B※6 , IOUT =+0.5mA
Supply Current 1
IDD1(AVG)
-
3.5
5.5
μA
VDD=1.8V, Average
Supply Current During Startup Time 1
IDD1(EN)
-
2.8
-
mA
Supply CurrentDuring Standby Time 1
IDD1(DIS)
-
1.8
-
μA
Supply Current 2
IDD2(AVG)
-
6.5
9
μA
Supply Current During Startup Time 2
IDD2(EN)
-
4.5
-
mA
Supply CurrentDuring Standby Time 2
IDD2(DIS)
-
4.0
-
μA
Period
VDD=1.8V,
During Startup Time Value
VDD=1.8V,
During Standby Time Value
VDD=2.7V, Average
VDD=2.7V,
During Startup Time Value
VDD=2.7V,
During Standby Time Value
※6. B = Magnetic flux density
1mT=10Gauss
Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor.
After applying power supply, it takes one cycle of period (TP) to become definite output. Radiation hardiness is not designed.
BU52013HFV (Unless otherwise specified, VDD=1.80V, Ta=25℃)
Limit
Parameters
Symbol
Min
Typ
Max
Unit
Conditions
Power Supply Voltage
VDD
1.65
1.80
3.30
V
Operate Point
BopN
-5.0
-3.0
-
mT
Release Point
BrpN
-
-2.1
-0.6
mT
Hysteresis
BhysN
-
0.9
-
mT
TP
-
50
100
ms
Output High Voltage
VOH
VDD-0.2
-
-
V
BrpN<B※7 , IOUT =-0.5mA
Output Low Voltage
VOL
-
-
0.2
V
B<BopN※7 , IOUT =+0.5mA
Supply Current 1
IDD1(AVG)
-
3.5
5.5
μA
VDD=1.8V, Average
Supply Current During Startup Time 1
IDD1(EN)
-
2.8
-
mA
Supply CurrentDuring Standby Time 1
IDD1(DIS)
-
1.8
-
μA
Supply Current 2
IDD2(AVG)
-
6.5
9
μA
Supply Current During Startup Time 2
IDD2(EN)
-
4.5
-
mA
Supply CurrentDuring Standby Time 2
IDD2(DIS)
-
4.0
-
μA
Period
VDD=1.8V,
During Startup Time Value
VDD=1.8V,
During Standby Time Value
VDD=2.7V,Average
VDD=2.7V,
During Startup Time Value
VDD=2.7V,
During Standby Time Value
※7 B = Magnetic flux density
1mT=10Gauss
Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor.
After applying power supply, it takes one cycle of period (TP) to become definite output. Radiation hardiness is not designed.
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© 2010 ROHM Co., Ltd. All rights reserved.
3/13
2010.01 - Rev.B
Technical Note
BU52002GUL,BU52003GUL,BU52012HFV,BU52013HFV
●Figure of mesurement circuit
Tp
Bop/Brp
VDD
VDD
VDD
100μF
200Ω
VDD
OUT
GND
Oscilloscope
OUT
GND
V
The period is monitored by Oscilloscope.
Bop and Brp are measured with applying the magnetic field
from the outside.
Fig.1
Fig.2
Bop,Brp mesurement circuit
VOH
Tp mesurement circuit
Product Name
VDD
VDD
100μF
IOUT
BU52002GUL, BU52003GUL
1.0mA
BU52012HFV, BU52013HFV
0.5mA
OUT
GND
IOUT
V
VOH mesurement circuit
Fig.3
VOL
Product Name
VDD
VDD
100μF
IOUT
BU52002GUL, BU52003GUL
1.0mA
BU52012HFV, BU52013HFV
0.5mA
OUT
GND
V
IOUT
VOL mesurement circuit
Fig.4
IDD
A
2200μF
VDD
VDD
OUT
GND
Fig.5
IDD mesurement circuit
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© 2010 ROHM Co., Ltd. All rights reserved.
4/13
2010.01 - Rev.B
Technical Note
BU52002GUL,BU52003GUL,BU52012HFV,BU52013HFV
●Technical (Reference) Data
BU52002GUL (VDD=2.4~3.3V type)
Bop S
4.0
2.0
Brp S
0.0
-2.0
-4.0
-6.0
-8.0
-60 -40 -20 0
2.0
Brp S
-2.0
-4.0
PERIOD [ms]
70
60
50
40
30
20
10
0
2.4
2.8
3.2
60
50
40
30
20
-6.0
10
-8.0
0
2.0
Fig.7
20.0
18.0
AVERAGE SUPPLY CURRENT [µA]
Ta = 25°C
2.0
70
2.4
2.8
3.2
-60 -40 -20 0 20 40 60 80 100
AMBIENT TEMPERATURE [℃]
3.6
SUPPLY VOLTAGE [V]
100
90
Bop,Brp – Supply voltage
VDD=3.0V
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
-60 -40 -20 0
3.6
VDD=3.0V
80
0.0
20 40 60 80 100
Bop,Brp – Ambient temperature
80
Bop S
4.0
AMBIENT TEMPERATURE [℃]
Fig.6
90
Ta = 25°C
PERIOD [ms]
VDD=3.0V
6.0
SUPPLY VOLTAGE [V]
20 40 60 80 100
Fig.8 TP –Ambient temperature
AVERAGE SUPPLY CURRENT [µA]
6.0
MAGNETIC FLUX DENSITY [mT]
MAGNETIC FLUX DENSITY [mT]
100
8.0
8.0
20.0
18.0
16.0
Ta = 25°C
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
2.0
AMBIENT TEMPERATURE [℃]
Fig.9 TP – Supply voltage
2.4
2.8
3.2
3.6
SUPPLY VOLTAGE [V]
Fig.11 IDD – Supply voltage
Fig.10 IDD – Ambient temperature
BU52003GUL (VDD=2.4~3.3V type)
8.0
6.0
VDD=3.0V
2.0
0.0
Brp N
-2.0
-4.0
Bop N
-6.0
-8.0
-60 -40 -20 0
2.0
0.0
-4.0
PERIOD [ms]
50
40
30
10
-8.0
0
2.0
2.4
2.8
3.2
-60 -40 -20 0 20 40 60 80 100
AMBIENT TEMPERATURE [℃]
3.6
Fig.13 Bop,Brp – Supply voltage
AVERAGE SUPPLY CURRENT [µA]
Ta = 25°C
70
60
50
40
30
20
10
0
2.4
2.8
3.2
SUPPLY VOLTAGE [V]
60
20
Bop N
-6.0
3.6
Fig.15 TP –Supply voltage
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© 2010 ROHM Co., Ltd. All rights reserved.
20.0
18.0
16.0
14.0
VDD=3.0V
70
SUPPLY VOLTAGE [V]
100
2.0
Brp N
-2.0
AMBIENT TEMPERATURE [℃]
80
80
4.0
20 40 60 80 100
Fig.12 Bop,Brp – Ambient temperature
90
90
Ta = 25°C
Fig.14 TP – Ambient temperature
AVERAGE SUPPLY CURRENT [µA]
4.0
100
6.0
PERIOD [ms]
MAGNETIC FLUX DENSITY [mT]
MAGNETIC FLUX DENSITY [mT]
8.0
VDD=3.0V
12.0
10.0
8.0
6.0
4.0
2.0
0.0
-60 -40 -20 0
20 40 60 80 100
AMBIENT TEMPERATURE [℃]
Fig.16 IDD – Ambient temperature
5/13
20.0
18.0
Ta = 25°C
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
2.0
2.4
2.8
3.2
SUPPLY VOLTAGE [V]
3.6
Fig.17 IDD – Supply voltage
2010.01 - Rev.B
Technical Note
BU52002GUL,BU52003GUL,BU52012HFV,BU52013HFV
BU52012HFV (VDD=1.65V~3.3V type)
Bop S
4.0
2.0
Brp S
0.0
-2.0
-4.0
-6.0
-8.0
-60 -40 -20 0
Brp S
0.0
-2.0
-4.0
Ta = 25°C
PERIOD [ms]
70
60
50
40
30
20
10
0
2.6
3.0
3.4
60
50
40
30
20
-6.0
10
-8.0
0
1.4
1.8
2.2
2.6
3.0
3.4
-60 -40 -20 0
3.8
20.0
18.0
16.0
VDD=1.8V
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
-60 -40 -20 0
3.8
SUPPLY VOLT AGE [V]
Fig.20 TP – Ambient temperature
20.0
18.0
Ta = 25°C
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
20 40 60 80 100
1.4
1.8
2.2
2.6
3.0
3.4
3.8
SUPPLY VOLTAGE [V]
AMBIENT TEMPERATURE [℃]
Fig.21 TP – Supply voltage
20 40 60 80 100
AMBIENT TEMPERATURE [℃]
Fig.19 Bop,Brp – Supply voltage
AVERAGE SUPPLY CURRENT [µA]
90
2.2
70
SUPPLY VOLTAGE [V]
100
1.8
VDD=1.8V
80
2.0
20 40 60 80 100
Fig.18 Bop,Brp – Ambient temperature
1.4
Bop S
4.0
AMBIENT TEMPERATURE [℃]
80
90
Ta = 25°C
PERIOD [ms]
VDD=1.8V
6.0
AVERAGE SUPPLY CURRENT [µA]
6.0
MAGNETIC FLUX DENSITY [mT]
MAGNETIC FLUX DENSITY [mT]
100
8.0
8.0
Fig.23 IDD – Supply voltage
Fig.22 IDD – Ambient temperature
8.0
VDD=1.8V
4.0
2.0
0.0
Brp N
-2.0
-4.0
Bop N
-6.0
-8.0
-60 -40 -20 0
0.0
-4.0
-6.0
Ta = 25°C
PERIOD [ms]
70
60
50
40
30
20
10
0
2.2
2.6
3.0
3.4
3.8
SUPPLY VOLTAGE [V]
Fig.27 TP – Supply voltage
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© 2010 ROHM Co., Ltd. All rights reserved.
50
40
30
0
1.8
2.2
2.6
3.0
3.4
-60 -40 -20 0 20 40 60 80 100
AMBIENT TEMPERATURE [℃]
3.8
Fig.25 Bop,Brp – Supply voltage
20.0
16.0
60
10
-8.0
18.0
70
20
Bop N
1.4
AVERAGE SUPPLY CURRENT [µA]
90
1.8
Brp N
-2.0
SUPPLY VOLTAGE [V]
100
VDD=1.8V
80
2.0
AMBIENT TEMPERATURE [℃]
1.4
90
Ta = 25°C
4.0
20 40 60 80 100
Fig.24 Bop,Brp – Ambient temperature
80
100
6.0
VDD=1.8V
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
-60 -40 -20 0
Fig.26 TP – Ambient temperature
AVERAGE SUPPLY CURRENT [µA]
6.0
PERIOD [ms]
8.0
MAGNETIC FLUX DENSITY [mT]
MAGNETIC FLUX DENSITY [mT]
BU52013HFV (VDD=1.65V~3.3V type)
20 40 60 80 100
AMBIENT TEMPERATURE [℃]
Fig.28 IDD – Ambient temperature
6/13
20.0
18.0
16.0
Ta = 25°C
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
SUPPLY VOLTAGE [V]
Fig.29 IDD – Supply voltage
2010.01 - Rev.B
Technical Note
BU52002GUL,BU52003GUL,BU52012HFV,BU52013HFV
●Block Diagram
BU52002GUL, BU52003GUL
0.1μF
VDD
A1
Adjust the bypass capacitor
value as necessary, according
to voltage noise conditions, etc.
LATCH
SAMPLE
& HOLD
×
DYNAMIC
OFFSET
CANCELLATION
TIMING LOGIC
HALL
ELEMENT
B1
The CMOS output terminals enable
direct connection to the PC, with no
external pull-up resistor required.
OUT
A2
GND
Fig.30
PIN No.
PIN Name
Function
Comment
A1
VDD
POWER SUPPLY
A2
GND
GROUND
B1
OUT
OUTPUT
B2
N.C.
A1
A2
B1
OPEN or Short to GND.
B2
Surface
A2
A1
B2
B1
Reverse
BU52012HFV, BU52013HFV
0.1µF
VDD
4
Adjust the bypass capacitor
value as necessary, according
to voltage noise conditions, etc.
LATCH
SAMPLE
& HOLD
×
DYNAMIC
OFFSET
CANCELLATION
TIMING LOGIC
HALL
ELEMENT
The CMOS output terminals enable direct
connection to the PC, with no external pull-up
resistor required
5
OUT
2
GND
Fig.31
PIN No.
PIN NAME
FUNCTION
1
N.C.
2
GND
3
N.C.
4
VDD
POWER SUPPLY
5
OUT
OUTPUT
COMMENT
5
4
4
3
3
5
OPEN or Short to GND.
GROUND
OPEN or Short to GND.
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© 2010 ROHM Co., Ltd. All rights reserved.
1
2
Surface
7/13
2
1
Reverse
2010.01 - Rev.B
Technical Note
BU52002GUL,BU52003GUL,BU52012HFV,BU52013HFV
●Description of Operations
(Micropower Operation)
The unipolar detection Hall IC adopts an intermittent
operation method to save energy. At startup, the Hall
elements, amp, comparator and other detection circuits
power ON and magnetic detection begins. During standby,
the detection circuits power OFF, thereby reducing current
consumption. The detection results are held while standby
is active, and then output.
IDD
Period
Startup time
Standby
t Reference period: 50ms (MAX100ms)
Reference startup time: 24μs
Fig.32
(Offset Cancelation)
VDD
I
B×
+
Hall Voltage
-
GND
Fig.33
The Hall elements form an equivalent Wheatstone (resistor)
bridge circuit. Offset voltage may be generated by a
differential in this bridge resistance, or can arise from changes
in resistance due to package or bonding stress. A dynamic
offset cancellation circuit is employed to cancel this offset
voltage.
When Hall elements are connected as shown in Fig. 33 and a
magnetic field is applied perpendicular to the Hall elements,
voltage is generated at the mid-point terminal of the bridge.
This is known as Hall voltage.
Dynamic cancellation switches the wiring (shown in the figure)
to redirect the current flow to a 90˚ angle from its original path,
and thereby cancels the Hall voltage.
The magnetic signal (only) is maintained in the sample/hold
circuit during the offset cancellation process and then
released.
(Magnetic Field Detection Mechanism)
S
N
S
S
S
N
Flux
N
Flux
Fig.34
The Hall IC cannot detect magnetic fields that run horizontal to the package top layer.
Be certain to configure the Hall IC so that the magnetic field is perpendicular to the top layer.
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© 2010 ROHM Co., Ltd. All rights reserved.
8/13
2010.01 - Rev.B
Technical Note
BU52002GUL,BU52003GUL,BU52012HFV,BU52013HFV
BU52002GUL,BU52012HFV
S-Pole
N
S
N
S
S
N
OUT [V]
Flux
High
Flux
High
High
Low
B
Brp S
N-Pole
0
Magnetic flux density [mT]
Fig.35 S-Pole Detection
Bop S
S-Pole
BU52002GUL,BU52012HFV detects and outputs for the S-pole only. Since it is unipolar, it does not recognize the N-pole.
BU52003GUL,BU52013HFV
N-Pole
N
S
N
S
S
N
OUT [V]
Flux
High
Flux
High
High
Low
B
Bop N
Brp N
N-Pole
0
Magnetic flux density [mT]
Fig.36
S-Pole
N-Pole Detection
BU52003GUL,BU52013HFV detects and outputs for the N-pole only. Since it is unipolar, it does not recognize the S-pole.
The unipolar detection Hall IC detects magnetic fields running perpendicular to the top surface of the package. There is an
inverse relationship between magnetic flux density and the distance separating the magnet and the Hall IC: when distance
increases magnetic density falls. When it drops below the operate point (Bop), output goes HIGH. When the magnet gets
closer to the IC and magnetic density rises, to the operate point, the output switches LOW. In LOW output mode, the
distance from the magnet to the IC increases again until the magnetic density falls to a point just below Bop, and output
returns HIGH. (This point, where magnetic flux density restores HIGH output, is known as the release point, Brp.) This
detection and adjustment mechanism is designed to prevent noise, oscillation and other erratic system operation.
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9/13
2010.01 - Rev.B
Technical Note
BU52002GUL,BU52003GUL,BU52012HFV,BU52013HFV
●Intermittent Operation at Power ON
Power ON
VDD
Startup time
Standby time
Standby time
Startup time
Supply current
(Intermittentaction)
Indefinite
OUT
High
(No magnetic
field present)
Indefinite
OUT
(Magnetic
field present)
Low
Fig.37
The unipolar detection Hall IC adopts an intermittent operation method in detecting the magnetic field during startup, as
shown in Fig. 37. It outputs to the appropriate terminal based on the detection result and maintains the output condition
during the standby period. The time from power ON until the end of the initial startup period is an indefinite interval, but it
cannot exceed the maximum period, 100ms. To accommodate the system design, the Hall IC output read should be
programmed within 100ms of power ON, but after the time allowed for the period ambient temperature and supply voltage.
●Magnet Selection
Of the two representative varieties of permanent magnet, neodymium generally offers greater magnetic power per volume
than ferrite, thereby enabling the highest degree of miniaturization, Thus, neodymium is best suited for small equipment
applications. Fig. 38 shows the relation between the size (volume) of a neodymium magnet and magnetic flux density. The
graph plots the correlation between the distance (L) from three versions of a 4mm X 4mm cross-section neodymium magnet
(1mm, 2mm, and 3mm thick) and magnetic flux density. Fig. 39 shows Hall IC detection distance – a good guide for
determining the proper size and detection distance of the magnet. Based on the BU52012HFV,BU52013HFV operating point
max 5.0 mT, the minimum detection distance for the 1mm, 2mm and 3mm magnets would be 7.6mm, 9.22mm, and 10.4mm,
respectively. To increase the magnet’s detection distance, either increase its thickness or sectional area.
10
Magnetic flux density[mT]
9
t=3mm
8
7
t=1mm
t=2mm
6
5
4
3
2
1
7.6mm
0
0
2
4
6
8
9.2mm 10.4mm
10
12
14
16
18
20
Distance between magnet and Hall IC [mm]
Fig.38
X
t
X=Y=4mm
Y
t=1mm,2mm,3mm
Magnet material: NEOMAX-44H (material)
Maker: NEOMAX CO.,LTD.
Magnet
t
L: Variable
…Flux density measuring point
Magnet size
Fig.39 Magnet Dimensions and Flux Density Measuring Point
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© 2010 ROHM Co., Ltd. All rights reserved.
10/13
2010.01 - Rev.B
Technical Note
BU52002GUL,BU52003GUL,BU52012HFV,BU52013HFV
●Position of the Hall Effect IC(Reference)
HVSOF5
VCSP50L1
0.55
0.6
0.55
0.8
0.35
0.2
(UNIT:mm)
●Footprint dimensions (Optimize footprint dimensions to the board design and soldering condition)
HVSOF5
VCSP50L1
(UNIT:mm)
Strings
e
b3
SD
SE
Size(Typ.)
0.50
0.25
0.25
0.25
●Terminal Equivalent Circuit Diagram
Because they are configured for CMOS (inverter) output, the output pins require no external resistance and allow direct
connection to the PC. This, in turn, enables reduction of the current that would otherwise flow to the external resistor during
magnetic field detection, and supports overall low current (micropower) operation.
OUT
VDD
GND
Fig.40
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© 2010 ROHM Co., Ltd. All rights reserved.
11/13
2010.01 - Rev.B
BU52002GUL,BU52003GUL,BU52012HFV,BU52013HFV
Technical Note
●Notes for use
1) Absolute maximum ratings
Exceeding the absolute maximum ratings for supply voltage, operating conditions, etc. may result in damage to or
destruction of the IC. Because the source (short mode or open mode) cannot be identified if the device is damaged in this
way, it is important to take physical safety measures such as fusing when implementing any special mode that operates in
excess of absolute rating limits.
2) GND voltage
Make sure that the GND terminal potential is maintained at the minimum in any operating state, and is always kept lower
than the potential of all other pins.
3) Thermal design
Use a thermal design that allows for sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
4) Pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. Mounting errors, such as improper positioning
or orientation, may damage or destroy the device. The IC may also be damaged or destroyed if output pins are shorted
together, or if shorts occur between the output pin and supply pin or GND.
5) Positioning components in proximity to the Hall IC and magnet
Positioning magnetic components in close proximity to the Hall IC or magnet may alter the magnetic field, and therefore
the magnetic detection operation. Thus, placing magnetic components near the Hall IC and magnet should be avoided in
the design if possible. However, where there is no alternative to employing such a design, be sure to thoroughly test and
evaluate performance with the magnetic component(s) in place to verify normal operation before implementing the design.
6) Operation in strong electromagnetic fields
Exercise extreme caution about using the device in the presence of a strong electromagnetic field, as such use may cause
the IC to malfunction.
7) Common impedance
Make sure that the power supply and GND wiring limits common impedance to the extent possible by, for example,
employing short, thick supply and ground lines. Also, take measures to minimize ripple such as using an inductor or
capacitor.
8) GND wiring pattern
When both a small-signal GND and high-current GND are provided, single-point grounding at the reference point of the set
PCB is recommended, in order to separate the small-signal and high-current patterns, and to ensure that voltage changes
due to the wiring resistance and high current do not cause any voltage fluctuation in the small-signal GND. In the same
way, care must also be taken to avoid wiring pattern fluctuations in the GND wiring pattern of external components.
9) Exposure to strong light
Exposure to halogen lamps, UV and other strong light sources may cause the IC to malfunction. If the IC is subject to such
exposure, provide a shield or take other measures to protect it from the light. In testing, exposure to white LED and
fluorescent light sources was shown to have no significant effect on the IC.
10) Power source design
Since the IC performs intermittent operation, it has peak current when it’s ON. Please taking that into account and under
examine adequate evaluations when designing the power source.
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© 2010 ROHM Co., Ltd. All rights reserved.
12/13
2010.01 - Rev.B
Technical Note
BU52002GUL,BU52003GUL,BU52012HFV,BU52013HFV
●Ordering part number
B
U
5
Part No
2
0
0
2
G
Part No
52002,52003,
52012,52013
U
L
Package
GUL : VSCP50L1
HFV : HVSOF5
-
E
2
Packaging and forming specification
E2: Embossed tape and reel
(VSCP50L1)
TR: Embossed tape and reel
(HVSOF5)
VCSP50L1 (BU52002GUL,BU52003GUL)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
(Unit:mm)
Reel
)
∗ Order quantity needs to be multiple of the minimum quantity.
HVSOF5
1.0±0.05
3000pcs
4
4
(0.91)
5
0.2MAX
Embossed carrier tape
Quantity
(0.05)
Tape
(0.3)
5
(0.41)
1.6±0.05
(0.8)
Direction
of feed
TR
The direction is the 1pin of product is at the upper right when you hold
( reel on the left hand and you pull out the tape on the right hand
)
3 2 1
1 2 3
1pin
0.13±0.05
S
+0.03
0.02 –0.02
0.6MAX
1.2±0.05
(MAX 1.28 include BURR)
<Tape and Reel information>
1.6±0.05
0.1
S
0.5
0.22±0.05
0.08
Direction of feed
M
(Unit : mm)
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© 2010 ROHM Co., Ltd. All rights reserved.
Reel
13/13
∗ Order quantity needs to be multiple of the minimum quantity.
2010.01 - Rev.B
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
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More detail product informations and catalogs are available, please contact us.
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R1010A
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