IRF IRF3717PBF Synchronous mosfet for notebook processor power Datasheet

PD - 95719
IRF3717PbF
HEXFET® Power MOSFET
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
l Lead-Free
VDSS
RDS(on) max
4.4m:@VGS = 10V
20V
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
1
8
S
2
7
S
3
6
4
5
S
G
ID
20A
A
A
D
D
D
D
SO-8
Top View
Absolute Maximum Ratings
Max.
Units
VDS
Drain-to-Source Voltage
Parameter
20
V
VGS
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
± 20
ID @ TA = 25°C
20
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
160
ID @ TA = 70°C
A
16
c
PD @TA = 25°C
Power Dissipation
2.5
PD @TA = 70°C
Power Dissipation
1.6
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
W
0.02
-55 to + 150
W/°C
°C
Thermal Resistance
Parameter
RθJL
RθJA
Junction-to-Drain Lead
Junction-to-Ambient
f
Typ.
Max.
Units
–––
20
°C/W
–––
50
Notes  through „ are on page 10
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1
8/10/04
IRF3717PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
∆ΒVDSS/∆TJ
Min. Typ. Max. Units
20
–––
–––
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
0.014
3.7
–––
4.4
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 20A
Gate Threshold Voltage
–––
1.55
4.8
2.0
5.7
2.45
VGS = 4.5V, ID = 16A
VDS = VGS, ID = 250µA
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
-5.4
–––
–––
1.0
IGSS
Gate-to-Source Forward Leakage
–––
–––
–––
–––
150
100
nA
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 20V
Gate-to-Source Reverse Leakage
Forward Transconductance
–––
57
–––
–––
-100
–––
S
VGS = -20V
VDS = 10V, ID = 16A
Total Gate Charge
Pre-Vth Gate-to-Source Charge
–––
–––
22
6.8
33
–––
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
2.2
7.3
–––
–––
Qgodr
Qsw
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
–––
5.7
9.5
–––
–––
Qoss
td(on)
Output Charge
Turn-On Delay Time
–––
–––
12
12
–––
–––
tr
td(off)
Rise Time
Turn-Off Delay Time
–––
–––
14
15
–––
–––
tf
Ciss
Fall Time
Input Capacitance
–––
–––
6.0
2890
–––
–––
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
–––
–––
930
430
–––
–––
RDS(on)
VGS(th)
∆VGS(th)/∆TJ
gfs
Qg
Qgs1
Qgs2
Qgd
V
Conditions
Drain-to-Source Breakdown Voltage
VGS = 0V, ID = 250µA
e
e
V
mV/°C
µA VDS = 16V, VGS = 0V
VDS = 10V
nC
VGS = 4.5V
ID = 16A
See Fig. 16
nC
ns
VDS = 10V, VGS = 0V
VDD = 10V, VGS = 4.5V
ID = 16A
Clamped Inductive Load
VGS = 0V
pF
VDS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
c
Typ.
–––
–––
d
Max.
32
16
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
–––
–––
160
VSD
trr
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
–––
–––
–––
22
1.0
32
V
ns
Qrr
Reverse Recovery Charge
–––
13
19
nC
2
c
–––
–––
20
Conditions
MOSFET symbol
A
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 16A, VGS = 0V
TJ = 25°C, IF = 16A, VDD = 10V
di/dt = 100A/µs
S
e
e
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IRF3717PbF
1000
VGS
10V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
TOP
100
BOTTOM
10
1
20µs PULSE WIDTH
Tj = 25°C
TOP
ID, Drain-to-Source Current (A)
1000
100
BOTTOM
10
2.5V
20µs PULSE WIDTH
Tj = 150°C
2.5V
0.1
1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
1.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (Α)
VGS
10V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
2.5V
100
T J = 150°C
10
T J = 25°C
1
VDS = 10V
20µs PULSE WIDTH
0.1
ID = 20A
VGS = 10V
1.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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5.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRF3717PbF
100000
6.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID=16A
C, Capacitance(pF)
C oss = C ds + C gd
10000
Ciss
Coss
1000
Crss
VDS= 16V
VDS= 10V
5.0
4.0
3.0
2.0
1.0
0.0
100
1
10
100
0
VDS, Drain-to-Source Voltage (V)
10
15
20
25
30
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000.00
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
5
100.00
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10.00
T J = 25°C
1.00
100µsec
10
Tj = 150°C
Single Pulse
VGS = 0V
0.10
10msec
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1msec
T A = 25°C
1.4
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF3717PbF
2.5
VGS(th) Gate threshold Voltage (V)
ID, Drain Current (A)
20
15
10
5
2.0
ID = 250µA
1.5
1.0
0
25
50
75
100
125
-75
150
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
T A , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
100
Thermal Response ( Z thJA )
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
τJ
0.1
R1
R1
τJ
τ1
R2
R2
R3
R3
R4
R4
τC
τ
τ2
τ1
τ3
τ2
τ3
τ4
τ4
Ci= τi/Ri
Ci= i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Ri (°C/W)
τi (sec)
1.4174
0.000277
11.3607
0.103855
21.8639
1.362000
15.3721
39.60000
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T
J = P DM x Z thJA
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
+T A
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF3717PbF
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
VGS
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
EAS , Single Pulse Avalanche Energy (mJ)
150
ID
6.5A
7.5A
BOTTOM 16A
TOP
100
50
0
25
tp
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
LD
VDS
I AS
Fig 12b. Unclamped Inductive Waveforms
+
VDD D.U.T
VGS
Current Regulator
Same Type as D.U.T.
Pulse Width < 1µs
Duty Factor < 0.1%
50KΩ
12V
.2µF
Fig 14a. Switching Time Test Circuit
.3µF
D.U.T.
+
V
- DS
VDS
90%
VGS
3mA
10%
IG
ID
VGS
Current Sampling Resistors
td(on)
Fig 13. Gate Charge Test Circuit
6
tr
td(off)
tf
Fig 14b. Switching Time Waveforms
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IRF3717PbF
D.U.T
Driver Gate Drive
ƒ
+
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
V DD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
‚
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 16. Gate Charge Waveform
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IRF3717PbF
Power MOSFET Selection for Non-Isolated DC/DC Converters
Control FET
Synchronous FET
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called
the Control FET, are impacted by the Rds(on) of the
MOSFET, but these conduction losses are only about
one half of the total losses.
The power loss equation for Q2 is approximated
by;
*
Ploss = Pconduction + Pdrive + Poutput
(
2
Ploss = Irms × Rds(on)
)
Power losses in the control switch Q1 are given
by;
+ (Qg × Vg × f )
Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput
⎛Q
⎞
+ ⎜ oss × Vin × f + (Qrr × Vin × f )
⎝ 2
⎠
This can be expanded and approximated by;
Ploss = (Irms 2 × Rds(on ) )
⎛
Qgs 2
Qgd
⎞ ⎛
⎞
+⎜I ×
× Vin × f ⎟ + ⎜ I ×
× Vin × f ⎟
ig
ig
⎝
⎠ ⎝
⎠
+ (Qg × Vg × f )
+
⎛ Qoss
× Vin × f ⎞
⎝ 2
⎠
This simplified loss equation includes the terms Qgs2
and Qoss which are new to Power MOSFET data sheets.
Qgs2 is a sub element of traditional gate-source
charge that is included in all MOSFET data sheets.
The importance of splitting this gate-source charge
into two sub elements, Qgs1 and Qgs2, can be seen from
Fig 16.
Qgs2 indicates the charge that must be supplied by
the gate driver between the time that the threshold
voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in
reducing switching losses in Q1.
Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the
parallel combination of the voltage dependant (nonlinear) capacitance’s Cds and Cdg when multiplied by
the power supply input buss voltage.
*dissipated primarily in Q1.
For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the control IC so the gate drive losses become much more
significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Qgd/Qgs1 must be minimized to reduce the
potential for Cdv/dt turn on.
Figure A: Qoss Characteristic
8
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IRF3717PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
7
6
5
6
H
0.25 [.010]
1
2
3
A
4
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
0.25
.0098
0.10
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
y
0.10 [.004]
8X b
0.25 [.010]
MAX
b
e1
6X
MILLIMETERS
MIN
A
E
INCHES
DIM
B
A1
8X L
8X c
7
C A B
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
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9
IRF3717PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.26mH, RG = 25Ω, IAS = 16A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
10
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