MJD2955 (PNP)
MJD3055 (NPN)
Complementary Power
Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose amplifier and low speed switching
applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
•
•
•
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Electrically Similar to MJE2955 and MJE3055
DC Current Gain Specified to 10 Amperes
High Current Gain−Bandwidth Product − fT = 2.0 MHz (Min) @ IC
= 500 mAdc
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
These are Pb−Free Packages
SILICON
POWER TRANSISTORS
10 AMPERES
60 VOLTS, 20 WATTS
MARKING
DIAGRAMS
4
1 2
3
DPAK
CASE 369C
STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
VCEO
60
Vdc
Collector−Base Voltage
VCB
70
Vdc
Emitter−Base Voltage
VEB
5
Vdc
Collector Current
IC
10
Adc
Base Current
IB
6
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD{
20
0.16
W
W/°C
Total Power Dissipation (Note1)
@ TA = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
Collector−Emitter Voltage
W
1.75
0.014
W/°C
−55 to +150
°C
4
1
AYWW
J
xx55G
2
DPAK−3
CASE 369D
STYLE 1
3
A
Y
WW
Jxx55
G
= Assembly Location
= Year
= Work Week
= Device Code
x = 29 or 30
= Pb−Free Package
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Characteristic
AYWW
J
xx55G
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
6.25
°C/W
Thermal Resistance, Junction−to−Ambient
(Note1)
RqJA
71.4
°C/W
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must
be observed.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 10
1
Publication Order Number:
MJD2955/D
MJD2955 (PNP) MJD3055 (NPN)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
60
−
Vdc
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
ICEO
−
50
mAdc
Collector Cutoff Current
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX
−
−
0.02
2
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 70 Vdc, IE = 0, TC = 150_C)
ICBO
−
−
0.02
2
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
IEBO
−
0.5
20
5
100
−
−
−
1.1
8
OFF CHARACTERISTICS
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 2)
(IC = 4 Adc, VCE = 4 Vdc)
(IC = 10 Adc, VCE = 4 Vdc)
hFE
−
Collector−Emitter Saturation Voltage (Note 2)
(IC = 4 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
Vdc
Base−Emitter On Voltage (Note 2)
(IC = 4 Adc, VCE = 4 Vdc)
VBE(on)
−
1.8
Vdc
fT
2
−
MHz
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
ORDERING INFORMATION
Device
Package Type
Package
MJD2955G
DPAK
(Pb−Free)
369C
MJD2955−1G
DPAK
(Pb−Free)
369D
MJD2955T4G
DPAK
(Pb−Free)
MJD3055G
DPAK
(Pb−Free)
MJD3055T4G
DPAK
(Pb−Free)
Shipping†
75 Units / Rail
2500 Tape & Reel
369C
75 Units / Rail
2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MJD2955 (PNP) MJD3055 (NPN)
TYPICAL CHARACTERISTICS
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
2 20
TC
1.5 15
TA
SURFACE
MOUNT
1 10
0.5
5
0
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 1. Power Derating
2
500
100
VCE = 2 V
0.7
0.5
25°C
-55°C
50
30
20
0.02
0.05
0.1
0.5
0.2
1
2
5
10
0
0.1
0.2
0.4
0.6
1
2
Figure 2. DC Current Gain
Figure 3. Turn−On Time
4
6
5
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
3
2
TJ = 25°C
1
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2 V
0.4
0.2
0.06 0.1
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)
μ
V, VOLTAGE (VOLTS)
0.6
td @ VBE(off) ≈ 5 V
IC, COLLECTOR CURRENT (AMP)
1
0.8
0.1
0.03
0.02
1.4
1.2
tr
0.3
0.2
0.07
0.05
10
5
0.01
TJ = 25°C
VCC = 30 V
IC/IB = 10
1
TJ = 150°C
t, TIME (s)
μ
hFE , DC CURRENT GAIN
300
200
ts
0.7
0.5
0.3
0.2
tf
0.1
VCE(sat) @ IC/IB = 10
0.2 0.3
0.5
1
2
3
5
0.07
0.05
0.06 0.1
10
0.2
0.4
0.6
1
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages, MJD3055
Figure 5. Turn−Off Time
http://onsemi.com
3
2
4
6
MJD2955 (PNP) MJD3055 (NPN)
2
TJ = 25°C
1.6
V, VOLTAGE (VOLTS)
VCC
+30 V
25 ms
RC
+11 V
0
1.2
SCOPE
RB
-9 V
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 3 V
D1
51
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
-4 V
0.4
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCE(sat) @ IC/IB = 10
0
0.1
0.2 0.3
0.5
1
2 3
IC, COLLECTOR CURRENT (AMP)
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
10
5
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 6. “On” Voltages, MJD2955
1
0.7
0.5
Figure 7. Switching Time Test Circuit
D = 0.5
0.3
0.2
0.2
0.1
0.07
0.05
0.05
0.02
0.01
0.03
0.02
P(pk)
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.1
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
50
100
200 300
500
1k
Figure 8. Thermal Response
FORWARD BIAS SAFE OPERATING AREA
INFORMATION
IC, COLLECTOR CURRENT (AMP)
10
5
3
2
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) v 150_C. TJ(pk) may be calculated from the data in
Figure 8. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100ms
1
1ms
0.5
0.3
5ms
0.1
dc
WIRE BOND LIMIT
THERMAL LIMIT TC = 25°C (D = 0.1)
SECOND BREAKDOWN LIMIT
0.05
0.03
0.02
0.01
0.6
500ms
TJ = 150°C
1
2
20
4
6
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
60
Figure 9. Maximum Forward Bias
Safe Operating Area
http://onsemi.com
4
MJD2955 (PNP) MJD3055 (NPN)
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
MJD2955 (PNP) MJD3055 (NPN)
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
T
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MJD2955/D