AP60WN4K5I Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% UIS Test BVDSS 600V ▼ Simple Drive Requirement RDS(ON) 4.5Ω ▼ Fast Switching Characteristic 3 ID D G ▼ RoHS Compliant & Halogen-Free 2A S Description AP60WN4K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G D S TO-220CFM(I) The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. . Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ 3 Drain Current, VGS @ 10V 1 Rating Units 600 V +30 V 2 A IDM Pulsed Drain Current 8 A PD@TC=25℃ Total Power Dissipation 24 W PD@TA=25℃ Total Power Dissipation 1.92 W 20 mJ 4 EAS Single Pulse Avalanche Energy TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 5.2 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W 1 201709261 AP60WN4K5I Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. 600 - - V VGS=10V, ID=1A - - 4.5 Ω VGS=0V, ID=250uA 2 Max. Units RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=20V, ID=1A - 3 - S IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=+30V, VDS=0V - - +1 uA Qg Total Gate Charge ID=2A - 9.5 15.2 nC Qgs Gate-Source Charge VDS=480V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 4.5 - nC td(on) Turn-on Delay Time VDD=300V - 8 - ns tr Rise Time ID=2A - 8 - ns td(off) Turn-off Delay Time RG=10Ω - 16 - ns tf Fall Time VGS=10V - 11 - ns Ciss Input Capacitance VGS=0V - 255 408 pF Coss Output Capacitance VDS=100V - 19 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 8 - pF Rg Gate Resistance f=1.0MHz - 8 16 Ω Min. Typ. . Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=2A, VGS=0V - - 1.5 V trr Reverse Recovery Time IS=2A, VGS=0V - 300 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 0.7 - uC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 3.Ensure that the junction temperature does not exceed TJmax.. 4.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω, VGS=10V THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP60WN4K5I 5 2.5 o 4 T C =150 C 2 ID , Drain Current (A) T C =25 C ID , Drain Current (A) o 10V 8.0V 7.0V 6.0V V G =5.0V 3 2 1 0.37Ω 1.5 1 0.5 0 0 0 10 20 30 40 0 10 V DS , Drain-to-Source Voltage (V) 20 30 40 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 4.2 4 I D =1A V G =10V I D =1A o 3.8 . Normalized RDS(ON) T C =25 C 4 RDS(ON) (Ω) 10V 8.0V 7.0V 6.0V V G =5.0V 3 2 1 3.6 0 3.4 2 4 6 8 -100 10 -50 0 50 100 150 o V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C ) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 4 I D =250uA 1.6 IS (A) Normalized VGS(th) 3 2 T j = 150 o C T j = 25 o C 1.2 0.8 1 0.4 0 0 0 0.2 0.4 0.6 0.8 1 V SD (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -100 -50 0 50 100 150 o T j , Junction Temperature ( C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP60WN4K5I f=1.0MHz 12 500 I D =2A V DS =480V 400 8 C (pF) VGS , Gate to Source Voltage (V) 10 6 0.37Ω 300 C iss 200 4 100 2 C oss C rss 0 0 0 2 4 6 8 10 12 0 200 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 600 800 Fig 8. Typical Capacitance Characteristics 1 10 1 10us 100us 0.1 1ms 10ms 100ms DC 0.01 T C =25 o C Single Pulse . Normalized Thermal Response (Rthjc) Duty factor=0.5 Operation in this area limited by RDS(ON) ID (A) 400 V DS , Drain-to-Source Voltage (V) 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single Pulse 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.001 0.001 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance 2 40 1.6 Normalized BVDSS PD , Power Dissipation (W) I D =1mA 30 20 1.2 0.8 10 0.4 0 0 0 50 100 T C , Case Temperature ( o C ) Fig 11. Total Power Dissipation 150 -100 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 12. Normalized BVDSS v.s. Junction Temperature 4 AP60WN4K5I MARKING INFORMATION Part Number 60WN4K5 YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 5