BYG22A thru BYG22D Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Low forward voltage • Soft recovery characteristic • Ultra fast reverse recovery time DO-214AC (SMA) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 2A VRRM 50 V to 200 V IFSM 35 A IR 1.0 µA VF 1.1 V trr 25 ns ER 20 mJ TJ max. 150 °C MECHANICAL DATA Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for highreliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code BYG22A BYG22B BYG22D BYG22A BYG22B BYG22D 50 100 200 UNIT V Maximum repetitive peak reverse voltage VRRM Average forward current IF(AV) 2.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 35 A ER 20 mJ TJ, TSTG - 55 to + 150 °C Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C Operating junction and storage temperature range Document Number: 88959 Revision: 27-Aug-07 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 BYG22A thru BYG22D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL BYG22A BYG22B BYG22D UNIT Maximum instantaneous forward voltage (1) IF = 1.0 A IF = 2.0 A TJ = 25 °C VF 1.0 1.1 V Maximum reverse current VR = VRRM TJ = 25 °C TJ = 100 °C IR 1 10 µA Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 25 ns Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BYG22A BYG22B BYG22D UNIT Maximum thermal resistance - junction lead TL = const. RθJL 25 °C/W Maximum thermal resistance - junction ambient RθJA 150 (1) 125 (2) 100 (3) °C/W Notes: (1) Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 µm Cu (3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 µm Cu ORDERING INFORMATION (Example) UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE BYG22A-E3/TR PREFERRED P/N 0.064 TR 1800 7" diameter plastic tape and reel BYG22A-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel BYG22AHE3/TR (1) 0.064 TR 1800 7" diameter plastic tape and reel 0.064 TR3 7500 13" diameter plastic tape and reel BYG22AHE3/TR3 (1) Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 2.5 Average Forward Current (A) Forward Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.001 0.0 VR = VRRM Half Sine-Wave 2.0 RθJA ≤ 25 K/W 1.5 RθJA ≤ 125 K/W 1.0 RθJA ≤ 150 K/W 0.5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 40 60 80 100 120 140 160 Forward Voltage (V) Ambient Temperature (°C) Figure 1. Forward Current vs. Forward Voltage Figure 2. Max. Average Forward Current vs. Ambient Temperature www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88959 Revision: 27-Aug-07 BYG22A thru BYG22D Vishay General Semiconductor 100 140 TA = 125 °C Reverse Recovery Time (ns) Reverse Current (µA) VR = VRRM 10 120 TA = 100 °C 100 TA = 75 °C 80 TA = 50 °C 60 40 TA = 25 °C 20 IR = 0.5 A, iR = 0.125 A 1 0 25 50 75 100 125 150 0 0.6 0.8 1.0 Forward Current (A) Figure 3. Reverse Current vs. Junction Temperature Figure 6. Max. Reverse Recovery Time vs. Forward Current 60 50 TA = 125 °C VR = VRRM Reverse Recovery Charge (nC) Reverse Power Dissipation (mW) 0.4 0.2 Junction Temperature (°C) 40 30 PR - Limit at 100 % VR 20 PR - Limit at 80 % VR 10 50 TA = 100 °C 40 TA = 75 °C 30 TA = 50 °C 20 TA = 25 °C 10 IR = 0.5 A, iR = 0.125 A 0 0 25 50 75 100 125 0.2 0 150 0.4 0.6 0.8 1.0 Forward Current (A) Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature Figure 7. Max. Reverse Recovery Charge vs. Forward Current Thermal Resistance for Pulse Cond. (K/W) Junction Temperature (°C) 70 f = 1 MHz Diode Capacitance (pF) 60 50 40 30 20 10 0 0.1 1 10 100 1000 125 K/W DC 100 tp/T = 0.5 tp/T = 0.2 tp/T = 0.1 10 tp/T = 0.05 tp/T = 0.02 Single Pulse tp/T = 0.01 1 10-5 10-4 10-3 10-2 10-1 100 Reverse Voltage (V) Pulse Length (s) Figure 5. Diode Capacitance vs. Reverse Voltage Figure 8. Thermal Response Document Number: 88959 Revision: 27-Aug-07 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 101 102 www.vishay.com 3 BYG22A thru BYG22D Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88959 Revision: 27-Aug-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1